Ultrawideband LNA 1960–2019: Review
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This article is published in Iet Circuits Devices & Systems.The article was published on 2021-04-22 and is currently open access. It has received 8 citations till now.read more
Citations
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Proceedings Article
A 3-10-Ghz low-noise amplifier with wideband LC-ladder matching network
Aly Ismail,Asad A. Abidi +1 more
TL;DR: In this paper, a SiGe amplifier with on-chip matching network spanning 3-10 GHz was presented, achieving 21dB peak gain, 2.5dB noise figure, and -1dBm input IP3 at 5 GHz, with a 10-mA bias current.
A cooled 1- to 2-GHz balanced HEMT amplifier
Gerardo G. Ortiz,Steven Padin +1 more
Abstract: The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.
Journal ArticleDOI
Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks
Jinxiang Zhao,Feng Wang,Shengli Zhang,Kuisong Wang,Chang Liu,Jing Wan,Xiaoxin Liang,Yuepeng Yan +7 more
TL;DR: In this article , the authors proposed a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for broadband receivers with flat gain, low noise and high linearity.
On 32-GHz cryogenically cooled HEMT low-noise amplifiers
J. J. Bautista,G. G. Ortiz,K. H. G. Duh,W. F. Kopp,P. Ho,P.C. Chao,M.Y. Kao,P. M. Smith,J.M. Ballingall +8 more
TL;DR: In this article, the authors evaluated the performance of a two-stage and a three-stage 32 GHz HEMT amplifier in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K to 12 K.
Journal ArticleDOI
A Common-Gate, gm-boosting LNA Using Active Inductor-Based Input Matching for 3.1–10.6 GHz UWB Applications
Humirah Majeed,A. K. Singh +1 more
TL;DR: In this paper, a low-noise amplifier (LNA) using active inductor (AI) input matching with common gate (CG) current-reused technique is presented.
References
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Journal ArticleDOI
A 16-Gb/s Low-Power Inductorless Wideband Gain-Boosted Baseband Amplifier With Skewed Differential Topology for Wireless Network-on-Chip
Joe Baylon,Xinmin Yu,Srinivasan Gopal,Reza Molavi,Shahriar Mirabbasi,Partha Pratim Pande,Deukhyoun Heo +6 more
TL;DR: An inductorless wideband gain-boosted baseband (BB) amplifier suitable for wireless network-on-chip (WiNoC) architectures and achieves the best figure of merit among existing amplifiers in similar CMOS technology nodes is presented.
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An Out-of-Band IM3 Cancellation Technique Using a Baseband Auxiliary Path in Wideband LNTA-Based Receivers
TL;DR: In this article, an out-of-band (OB) third-order intermodulation (IM3) cancellation technique is proposed and analyzed using a 65-nm CMOS 0.5-to 2.5GHz frequency-translational noise-cancelling receiver.
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30-50 GHz high-gain CMOS UWB LNA
TL;DR: In this article, a 30-50 GHz CMOS ultra-wideband low-noise amplifier with a flat high power gain (S 21) and a flat low noise figure (NF) is demonstrated for the Atacama large millimetre array (ALMA) band-1 (31.3-45 GHz) system applications.
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A wideband low noise amplifiers design incorporating the CMRC circuitry
TL;DR: In this article, the use of the compact microstrip resonant cell (CMRC) at the emitter pins of a bipolar junction transistor (BJT) for tuning a low noise amplifier (LNA) is presented.
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A Linear, Wideband, Low-Noise Amplifier Stage for Use in Nuclear Pulse Amplifiers
J. K. Millard,T. V. Blalock +1 more
TL;DR: In this article, the design evolution of a wideband voltage-sensitive amplifier stage is presented, including a new driver configuration and overload control circuit, and three basic input sections are considered; the first section consists of differentially connected bipolar transistors for use with low generator impedances, the second consists of medium-transconductance FETs to allow larger coupling time constants, and the third consists of high-transcondance FDs for low-noise performance with large coupling time constant.