Ultrawideband LNA 1960–2019: Review
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This article is published in Iet Circuits Devices & Systems.The article was published on 2021-04-22 and is currently open access. It has received 8 citations till now.read more
Citations
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Proceedings Article
A 3-10-Ghz low-noise amplifier with wideband LC-ladder matching network
Aly Ismail,Asad A. Abidi +1 more
TL;DR: In this paper, a SiGe amplifier with on-chip matching network spanning 3-10 GHz was presented, achieving 21dB peak gain, 2.5dB noise figure, and -1dBm input IP3 at 5 GHz, with a 10-mA bias current.
A cooled 1- to 2-GHz balanced HEMT amplifier
Gerardo G. Ortiz,Steven Padin +1 more
Abstract: The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.
Journal ArticleDOI
Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks
Jinxiang Zhao,Feng Wang,Shengli Zhang,Kuisong Wang,Chang Liu,Jing Wan,Xiaoxin Liang,Yuepeng Yan +7 more
TL;DR: In this article , the authors proposed a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for broadband receivers with flat gain, low noise and high linearity.
On 32-GHz cryogenically cooled HEMT low-noise amplifiers
J. J. Bautista,G. G. Ortiz,K. H. G. Duh,W. F. Kopp,P. Ho,P.C. Chao,M.Y. Kao,P. M. Smith,J.M. Ballingall +8 more
TL;DR: In this article, the authors evaluated the performance of a two-stage and a three-stage 32 GHz HEMT amplifier in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K to 12 K.
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A Common-Gate, gm-boosting LNA Using Active Inductor-Based Input Matching for 3.1–10.6 GHz UWB Applications
Humirah Majeed,A. K. Singh +1 more
TL;DR: In this paper, a low-noise amplifier (LNA) using active inductor (AI) input matching with common gate (CG) current-reused technique is presented.
References
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Journal ArticleDOI
Broadband coplanar-waveguide and microstrip low-noise amplifier hybrid integrations for K-band substrate integrated waveguide applications on low-permittivity substrate
TL;DR: In this paper, K-band low-noise amplifier (LNA) chips are integrated in low-permittivity coplanar waveguide and microstrip (MS) structures and are interconnected with substrate integrated waveguide (SIW) ports for direct applications in hybrid SIW technology.
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Reproduce system noise in wide-band magnetic recording systems
TL;DR: In this paper, the authors deal with the noise in the reproduce head and amplifier and show that the reproducing head is a passive circuit element and the amplifier is an active circuit element, which will generate both shot noise and thermal noise.
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Design of UWB switched gain controlled LNA using 0.18 μm CMOS
M.l. Jeong,Jung-Nam Lee,C.S. Lee +2 more
TL;DR: In this paper, a switched gain controlled low noise amplifier (LNA) for the 31- 48 GHz ultra-wideband system is presented, which is fabricated with the 018 mum 1P6M standard CMOS process.
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A Wideband Digital TV Receiver Front-End With Noise and Distortion Cancellation
Donggu Im,Ilku Nam +1 more
TL;DR: A low noise and highly linear wideband CMOS receiver front-end for digital TV receivers is proposed, which comprises a wideband noise canceling common gate low noise amplifier with a capacitively cross-coupled current source, a highly linear up-conversion micromixer with third-order intermodulation distortion cancellation, and a highlylinear surface acoustic wave (SAW) driver with enhanced loop gain.
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Wideband balun-LNA exploiting noise cancellation and g m ' ' compensation technique
Abstract: A wideband single-ended input, differential output balun-LNA is proposed for multi-standard wireless applications between 10 MHz and 3 GHz. The common-gate (CG) input stage in combination with a noise cancellation topology is adopted for wideband input matching and low-noise figure. An output stage with g m ″ compensation technique is utilised to promote the limited gain of the CG input stage, and obtain an optimised linearity performance. Realised in TSMC 180 nm RF CMOS process, the LNA provides a gain of 19.7 dB, a maximum input third-order interception point of 1.13 dBm, and a minimum NF AQ1 of 1.93 dB over a 3 dB bandwidth from 10 MHz to 1.7 GHz. Meanwhile, the proposed LNA shows good measured performance over the frequency band of 1.7–3 GHz.