Ultrawideband LNA 1960–2019: Review
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This article is published in Iet Circuits Devices & Systems.The article was published on 2021-04-22 and is currently open access. It has received 8 citations till now.read more
Citations
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Proceedings Article
A 3-10-Ghz low-noise amplifier with wideband LC-ladder matching network
Aly Ismail,Asad A. Abidi +1 more
TL;DR: In this paper, a SiGe amplifier with on-chip matching network spanning 3-10 GHz was presented, achieving 21dB peak gain, 2.5dB noise figure, and -1dBm input IP3 at 5 GHz, with a 10-mA bias current.
A cooled 1- to 2-GHz balanced HEMT amplifier
Gerardo G. Ortiz,Steven Padin +1 more
Abstract: The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.
Journal ArticleDOI
Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks
Jinxiang Zhao,Feng Wang,Shengli Zhang,Kuisong Wang,Chang Liu,Jing Wan,Xiaoxin Liang,Yuepeng Yan +7 more
TL;DR: In this article , the authors proposed a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for broadband receivers with flat gain, low noise and high linearity.
On 32-GHz cryogenically cooled HEMT low-noise amplifiers
J. J. Bautista,G. G. Ortiz,K. H. G. Duh,W. F. Kopp,P. Ho,P.C. Chao,M.Y. Kao,P. M. Smith,J.M. Ballingall +8 more
TL;DR: In this article, the authors evaluated the performance of a two-stage and a three-stage 32 GHz HEMT amplifier in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K to 12 K.
Journal ArticleDOI
A Common-Gate, gm-boosting LNA Using Active Inductor-Based Input Matching for 3.1–10.6 GHz UWB Applications
Humirah Majeed,A. K. Singh +1 more
TL;DR: In this paper, a low-noise amplifier (LNA) using active inductor (AI) input matching with common gate (CG) current-reused technique is presented.
References
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Journal ArticleDOI
A 3 GHz, 32 dB CMOS limiting amplifier for SONET OC-48 receivers
E. Sackinger,W.C. Fischer +1 more
TL;DR: In this paper, a front-end for a SONET OC-48 (2.5 Gb/s) is presented, where the limiting amplifier (LA) receives a small non-return to zero (NRZ) voltage signal from the transimpedance amplifier (TIA) and amplifies it to a level (e.g. 250 mV/sub pp/) sufficient for the reliable operation of the clock and data recovery circuit.
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Low-Area Active-Feedback Low-Noise Amplifier Design in Scaled Digital CMOS
TL;DR: It is demonstrated that competitive RF performance is achievable thanks to CMOS downscaling, pleasing many applications because of their low cost (digital CMOS) and low area (bondpad size).
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A 1.2 V Reactive-Feedback 3.1–10.6 GHz Low-Noise Amplifier in 0.13 $\mu{\hbox {m}}$ CMOS
M.T. Reiha,John R. Long +1 more
TL;DR: A 15.1 dB gain, 2.1dB noise figure low-noise amplifier (LNA) fabricated in 0.13 mum CMOS operates across the entire 3.1-10.6 GHz ultrawideband (UWB).
Journal ArticleDOI
A 3.1–10.6 GHz Ultra-Wideband CMOS Low Noise Amplifier With Current-Reused Technique
TL;DR: In this article, a 3.1-10.6 GHz ultra-wideband (UWB) low noise amplifier (LNA) utilizing a current-reused technique and a simple high-pass input matching network is proposed.
Journal ArticleDOI
A Wideband Inductorless LNA With Local Feedback and Noise Cancelling for Low-Power Low-Voltage Applications
Hongrui Wang,Li Zhang,Zhiping Yu +2 more
TL;DR: A new approach employing local negative feedback is introduced between the parallel CG and CS stages, leading to an LNA with higher gain and lower noise figure (NF) compared with the conventional CG-CS LNA, particularly under low power and voltage constraints.