Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors
TLDR
In this article, the authors show that carbon nanotube Schottky-barrier transistors exhibit scaling that is qualitatively different than conventional transistors, which depends in an unexpected way on both the thickness and the dielectric constant of the gate oxide.Abstract:
We show that carbon nanotube Schottky-barrier transistors exhibit scaling that is qualitatively different than conventional transistors The performance depends in an unexpected way on both the thickness and the dielectric constant of the gate oxide Experimental measurements and theoretical calculations for ambipolar devices provide a consistent understanding of the novel scaling, which reflects the very different device physics of a Schottky-barrier transistor with a quasi-one-dimensional channel contacting a sharp edge A simple analytic model gives explicit scaling expressions for key device parameters such as subthreshold slope, turn-on voltage, and transconductanceread more
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Ballistic carbon nanotube field-effect transistors
TL;DR: It is shown that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotube, greatly reduces or eliminates the barriers for transport through the valence band of nanot tubes.
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Electronic and transport properties of nanotubes
TL;DR: In this paper, the electronic and transport properties of carbon nanotubes are reviewed, and the fundamental aspects of conduction regimes and transport length scales are presented using simple models of disorder, with the derivation of a few analytic results concerning specific situations of short and long-range static perturbations.
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High-performance carbon nanotube field-effect transistor with tunable polarities
TL;DR: In this paper, a novel device concept was proposed for high performance enhancement mode CNFETs exhibiting n- or p-type unipolar behavior, tunable by electrostatic and/or chemical doping, with excellent OFF-state performance and a steep sub-threshold swing (S=63 mV/dec).
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Length scaling of carbon nanotube transistors
Aaron D. Franklin,Zhihong Chen +1 more
TL;DR: It is shown that nanotube transistors maintain their performance as their channel length is scaled from 3 µm to 15 nm, with an absence of so-called short-channel effects.
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Toward Nanowire Electronics
TL;DR: In this article, the electronic transport properties of nanowire field effect transistors (NW-FETs) are discussed in detail, and four different device concepts are studied in detail.
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