Journal ArticleDOI
Visible-blind photodetector based on p-i-n junction GaN nanowire ensembles.
Andres De Luna Bugallo,Maria Tchernycheva,Gwénolé Jacopin,Lorenzo Rigutti,François H. Julien,Shu-Ting Chou,Yuan-Ting Lin,Po-Han Tseng,Li-Wei Tu +8 more
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TLDR
The synthesis, fabrication and extensive characterization of a visible-blind photodetector based on p-i-n junction GaN nanowire ensembles that presents a high peak responsivity and the dependence on the incident power and the operation speed are discussed.Abstract:
We report the synthesis, fabrication and extensive characterization of a visible-blind photodetector based on p-i-n junction GaN nanowire ensembles. The nanowires were grown by plasma-assisted molecular beam epitaxy on an n-doped Si(111) substrate, encapsulated into a spin-on-glass and processed using dry etching and metallization techniques. The detector presents a high peak responsivity of 0.47 A W(-1) at - 1 V. The spectral response of the detector is restricted to the UV range with a UV-to-visible rejection ratio of 2 x 10(2). The dependence on the incident power and the operation speed of the photodetector are discussed.read more
Citations
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A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures
TL;DR: A comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field are provided.
Journal ArticleDOI
Gallium oxide solar-blind ultraviolet photodetectors: a review
Jingjing Xu,Wei Zheng,Feng Huang +2 more
TL;DR: In this article, a comprehensive review on Ga2O3-based solar-blind UV photodetectors is provided, with a detailed introduction of the developmental process of material growth methods and device manufacturing in the past decade.
Journal ArticleDOI
Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review.
TL;DR: This review summarizes recent developments in the classification and principles of UV detectors, i.e., photoconductive type, Schottky barrier type, metal-semiconductor-metal (MSM) type, p-n junction type and p-i-N junction type.
Journal ArticleDOI
III-Nitride nanowire optoelectronics
TL;DR: In this article, the authors provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis.
Journal ArticleDOI
Nanowire Electronics: From Nanoscale to Macroscale
TL;DR: A comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics, including a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics.
References
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Journal ArticleDOI
ZnO Nanowire UV Photodetectors with High Internal Gain
Cesare Soci,Arthur Zhang,Bin Xiang,Shadi A. Dayeh,David P. R. Aplin,Jeongwon Park,Xinyu Bao,Yu-Hwa Lo,Deli Wang +8 more
TL;DR: Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products higher than approximately 10 GHz, which promise a new generation of phototransistors for applications such as sensing, imaging, and intrachip optical interconnects.
Journal ArticleDOI
Size-dependent Photoconductivity in MBE-Grown GaN -Nanowires
Raffaella Calarco,Michel Marso,T. Richter,Ali I. Aykanat,R. Meijers,A. v. d. Hart,Toma Stoica,Hans Lüth +7 more
TL;DR: Electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers grown by molecular beam epitaxy (MBE) is reported, which is sensitively dependent on the column diameter.
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Vertically Aligned p-Type Single-Crystalline GaN Nanorod Arrays on n-Type Si for Heterojunction Photovoltaic Cells
Yongbing Tang,Z. H. Chen,Haisheng Song,Chun-Sing Lee,H. T. Cong,Hui-Ming Cheng,Wenjun Zhang,I. Bello,Shuit-Tong Lee +8 more
TL;DR: This study provides an experimental demonstration for integrating one-dimensional nanostructure arrays with the substrate to directly fabricate heterojunction photovoltaic cells.
Journal ArticleDOI
Short-wavelength solar-blind detectors-status, prospects, and markets
TL;DR: The development of Al/sub x/Ga/sub 1-x/N-based solar-blind UV detectors will be reviewed, the technological issues pertaining to material synthesis and device fabrication will be discussed, and the current state-of-the-art and future prospects for these detectors are reviewed and discussed.
Journal ArticleDOI
III nitrides and UV detection
TL;DR: In this paper, materials and devices issues are considered to provide a full picture of the advances in nitride UV photodetection, including basic structures like photoconductors, Schottky, p-i-n and metal-semiconductor-metal photodiodes and phototransistors.