Showing papers on "Barrier layer published in 2014"

Organic light emitting diode display

Abstract: An organic light emitting diode (OLED) display includes a flexible substrate, a barrier layer disposed on the flexible substrate, and an organic light emitting diode disposed on the barrier layer. The barrier layer includes a plurality of metal layers and a plurality of insulation layers in which the metal layers and the insulation layers are alternatively stacked with each other on the flexible substrate.

Organic light-emitting device and preparation method thereof

Abstract: The invention provides an organic light-emitting device which sequentially comprises an anode conductive substrate, a functional layer, a light-emitting layer, a cathode layer and an encapsulation layer Enclosed space is formed by the anode conductive substrate and the encapsulation layer, and the functional layer, the light-emitting layer and the cathode layer are arranged in the enclosed space The encapsulation layer sequentially comprises a protective layer, a barrier layer and a polyethylene terephthalate film, wherein the barrier layer sequentially comprises a first organic barrier layer, an oxide layer, a second organic barrier layer and a nitride layer, the first organic barrier layer and the second organic barrier layer are made of different materials, the first organic barrier layer, the oxide layer, the second organic barrier layer and the nitride layer form a basic structure, and the barrier layer is formed by multiple basic structures in a repeated mode The invention further provides a preparation method of the organic light-emitting device The method can effectively reduce erosion of moisture and oxygen on the organic light-emitting device, and the service life of the organic light-emitting device can be remarkably prolonged

Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

Wrap-Around Contact

Abstract: Fin structures are formed on a substrate. An isolation region is between the fin structures. The fin structures comprise epitaxial regions extending above the isolation region. Each of the epitaxial regions has a widest mid-region between an upper-surface and an under-surface. A dual-layer etch stop is formed over the fin structures and comprises a first sub-layer and a second sub-layer. The first sub-layer is along the upper- and under-surfaces and the isolation region. The second sub-layer is over the first sub-layer and along the upper-surfaces, and the second sub-layer merges together proximate the widest mid-regions of the epitaxial regions. Portions of the dual-layer etch stop are removed from the upper- and under-surfaces. A dielectric layer is formed on the upper- and under-surfaces. A metal layer is formed on the dielectric layer on the upper-surfaces. A barrier layer is formed on the metal layer and along the under-surfaces.

Battery packaging material

Abstract: The purpose of the present invention is to provide a film-like battery packaging material in which a coating layer, which can be cured in a short time and exhibits superior chemical resistance, is provided to a substrate layer surface. In the battery packaging material, which comprises a laminate body that includes at least a coating layer (1), a substrate layer (2), an adhesive layer (3), a barrier layer (4), and a sealant layer (5), in that order, the use of a resin composition containing a heat-curable resin and a curing accelerator as the coating layer (1) enables the formation of a coating layer that can be cured in a short time and contributes to electrolyte liquid, etc., resistance.

Thin film encapsulation - thin ultra high barrier layer for oled application

Abstract: A method and apparatus for depositing a multilayer barrier structure is disclosed herein. In one embodiment, a thin barrier layer formed over an organic semiconductor includes a non-conformal organic layer, an inorganic layer formed over the non-conformal organic layer, a metallic layer formed over the inorganic layer and a second organic layer formed over the metallic layer. In another embodiment, a method of depositing a barrier layer includes forming an organic semiconductor device over the exposed surface of a substrate, depositing an inorganic layer using CVD, depositing a metallic layer comprising one or more metal oxide or metal nitride layers over the inorganic layer by ALD, each of the metal oxide or metal nitride layers comprising a metal, wherein the metal is selected from the group consisting of aluminum, hafnium, titanium, zirconium, silicon or combinations thereof and depositing an organic layer over the metallic layer.

Magnetic tunnel junction for mram device

Abstract: A magnetoresistive random-access memory device with a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The memory device includes an antiferromagnetic structure and a magnetic tunnel junction structure disposed on the antiferromagnetic structure. The magnetic tunnel junction structure includes a reference layer and a free layer with a barrier layer sandwiched therebetween. Furthermore, a capping layer including a tantalum nitride film is disposed on the free layer of the magnetic tunnel junction structure.

Sea surface salinity and barrier layer variability in the equatorial Pacific as seen from Aquarius and Argo

Abstract: This study investigates the sea surface salinity (SSS) and barrier layer variability in the equatorial Pacific using recently available Aquarius and Argo data. Comparison between the two data sets indicates that Aquarius is able to capture most of the SSS features identified by Argo. Despite some discrepancies in the mean value, the SSS from the two data sets shows essentially the same seasonal cycle in both magnitude and phase. For the period of observation between August 2011 and July 2013 Aquarius nicely resolved the zonal displacement of the SSS front along the equator, showing its observing capacity of the western Pacific warm pool. Analysis of the Argo data provides further information on surface stratification. A thick barrier layer is present on the western side of the SSS front during all the period of observation, moving back and forth along the equator with its correlation with the Southern Oscillation Index exceeding 0.80. Generally, the thick barrier layer moves eastward during El Nino and westward during La Nina. The mechanisms responsible for this zonal displacement are discussed. Key Points Aquarius nicely resolved the SSS front along the equator in the western Pacific A thick barrier layer is always present on the western side of the SSS front Both the SSS front and thick barrier layer are highly correlated with ENSO

Quantum dot luminescent device

Abstract: The invention provides a quantum dot luminescent device. The quantum dot luminescent device comprises an anode, a hole transport layer, a quantum dot luminescent layer, an electronic transfer layer and a cathode which are arranged sequentially and adjacently. The quantum dot luminescent device further comprises an electronic barrier layer. The electronic barrier layer is arranged in the electronic transfer layer or between the quantum dot luminescent layer and the electronic transfer layer. Due to the arrangement of the electronic barrier layer, balance injection of charge carriers is ensured, automatic charge transfer between the electronic transfer layer and the quantum dot luminescent layer is isolated, electric neutrality of a quantum dot is ensured, then the quantum dot luminescent device can keep deserved luminous efficiency, the external quantum efficiency of the quantum dot luminescent device is improved, and meanwhile the service life of the quantum dot luminescent device is largely prolonged.

III-nitride P-channel field effect transistor with hole carriers in the channel

Abstract: A non-inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a nitrogen-polar III-Nitride first material, a barrier material layer, a two-dimensional hole gas in the barrier layer, and wherein the nitrogen-polar III-Nitride material comprises one or more III-Nitride epitaxial material layers grown in such a manner that when GaN is epitaxially grown the top surface of the epitaxial layer is nitrogen-polar. A method of making a P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the nitrogen-polar (001) face is the dominant face, growing a nucleation layer, growing a GaN epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.

Mass transport mechanism of cu species at the metal/dielectric interfaces with a graphene barrier.

Abstract: The interface between the metal and dielectric is an indispensable part in various electronic devices. The migration of metallic species into the dielectric can adversely affect the reliability of the insulating dielectric and can also form a functional solid-state electrolyte device. In this work, we insert graphene between Cu and SiO2 as a barrier layer and investigate the mass transport mechanism of Cu species through the graphene barrier using density functional theory calculations, second-ion mass spectroscopy (SIMS), capacitance–voltage measurement, and cyclic voltammetry. Our theoretical calculations suggest that the major migration path for Cu species to penetrate through the multiple-layered graphene is the overlapped defects larger than 0.25 nm2. The depth-profile SIMS characterizations indicate that the “critical” thickness of the graphene barrier for completely blocking the Cu migration is 5 times smaller than that of the conventional TaN barrier. Capacitance–voltage and cyclic voltammetry mea...

Benzocyclobutene barrier layer for suppressing conductance in nonlinear optical devices during electric field poling

Abstract: We measured the electro-optic (EO) coefficients (r33) of thin-film devices made from several monolithic, high number density organic EO chromophores with and without additional charge barrier layers. We found that a cross-linkable benzocyclobutene layer was very effective in suppressing unwanted, leakage current, keeping the effective poling voltage nearly identical to the applied voltage. This barrier layer proved to be superior to a titanium dioxide (TiO2) barrier layer. The suppression of the leakage current in combination with a new chromophore enabled the construction of EO devices that had r33 values in the range of 400–500 pm V−1 with poling fields ≥ 85 V μm−1.

Subseasonal variations in salinity and barrier‐layer thickness in the eastern equatorial Indian Ocean

Abstract: The barrier layer, the layer between the bottom of the density-defined mixed layer and the isothermal layer in the upper ocean, may play a role in air-sea dynamics. In the present study, data from Argo profiling floats in the tropical Indian Ocean and a mooring at 90°E, 0°N are used to examine subseasonal variations in upper ocean salinity and barrier-layer thickness (BLT) during boreal winter. In the eastern equatorial Indian Ocean, subseasonal variations in BLT are energetic. However, composites used to isolate the Madden-Julian Oscillation (MJO) component of the subseasonal signal reveal that, on average, the MJO anomaly in BLT is negligible despite large swings in both the mixed-layer depth and the isothermal-layer depth. This discrepancy is likely due to (a) noise from other subseasonal processes; and (b) the diversity of individual MJO events: the thickness of the mixed layer and the isothermal layer are sensitive to wind and rain forcing, so even subtle differences in the phasing and strength of MJO-related atmospheric anomalies can produce a very different effect on upper ocean stratification and hence on the thickness of the barrier layer. The effect of the barrier layer on the upper ocean response to MJO forcing is also evaluated. When the barrier layer is thick, entrainment cooling during the MJO is reduced, so the MJO drives a weaker sea surface temperature anomaly. This suggests that modulation of BLT can have significant consequences for the response of the upper ocean to the MJO, and hence, potentially, for feedbacks of the ocean onto the atmosphere on MJO time scales.

Methods for barrier layer removal

Abstract: Implementations described herein generally relate to semiconductor manufacturing and more particularly to methods for etching a low-k dielectric barrier layer disposed on a substrate using a non-carbon based approach. In one implementation, a method for etching a barrier low-k layer is provided. The method comprises (a) exposing a surface of the low-k barrier layer to a treatment gas mixture to modify at least a portion of the low-k barrier layer and (b) chemically etching the modified portion of the low-k barrier layer by exposing the modified portion to a chemical etching gas mixture, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride gas or at least a hydrogen gas and a nitrogen trifluoride gas.

Encapsulation barrier stack comprising dendrimer encapsulated nanop articles

Abstract: Disclosed is an encapsulation barrier stack, capable of encapsulating a moisture and/or oxygen sensitive article and comprising a multilayer film, wherein the multilayer film comprises: - one or more barrier layer(s) having low moisture and/or oxygen permeability, and - one or more sealing layer(s) arranged to be in contact with a surface of the at least one barrier layer, thereby covering defects present in the barrier layer, wherein the one or more sealing layer(s) comprise(s) a plurality of dendrimer encapsulated nanoparticles, the nanoparticles being reactive in that they are capable of interacting with moisture and/or oxygen to retard the permeation of moisture and/or oxygen through the defects present in the barrier layer.

Barrier layer stack for bit line air gap formation

Abstract: Air gaps are formed between conductive metal lines that have an inner barrier layer and an outer barrier layer. An etch step to remove sacrificial material is performed under a first set of process conditions producing a byproduct that suppresses further etching. A byproduct removal step performed under a second set of process conditions removes the byproduct.

Organic light-emitting diode display, an electronic device including the same, and method of manufacturing said organic light-emitting diode display

Abstract: Provided is an organic light-emitting diode (OLED) display (100) including: a first plastic layer (1PL); a first barrier layer (1BL) formed on the first plastic layer (1PL); a first intermediate layer (1IL) formed on the first barrier layer (1BL); a second plastic layer (2PL) formed on the intermediate layer (1IL); an OLED layer (120) formed on the second plastic layer (2PL); and a thin-film encapsulation layer (130) encapsulating the OLED layer (120).

Dual layer stack for contact formation

Abstract: A semiconductor structures includes a contact fabricated utilizing a multi material trench-layer. The multi material trench layer is utilized to form a contact trench and the contact trench is utilized to form the contact therein. The trench-layer includes a lower barrier trench layer and an upper photoprocessing layer. The photoprocessing layer is utilized pattern and form contact trench. The barrier layer protects an electroplating conductive layer utilized in forming the contact from corrosion that may occur during the removal of the photoprocessing layer.

Contact Structure and Method of Forming

Abstract: Contact structures and methods of forming contacts structures are contemplated by this disclosure. A structure includes a dielectric layer over a substrate, an adhesion layer, a silicide, a barrier layer, and a conductive material. The dielectric layer has an opening to a surface of the substrate. The adhesion layer is along sidewalls of the opening. The silicide is on the surface of the substrate. The barrier layer is on the adhesion layer and the silicide, and the barrier layer directly adjoins the silicide. The conductive material is on the barrier layer in the opening.

Wavelength conversion sheet and backlight unit

Abstract: The present invention is a wavelength conversion sheet, including a lamination of a phosphor layer using quantum dots, and a barrier film, characterized in that the barrier film is obtained by laminating a barrier layer on one surface of a polyethylene terephthalate film having an acid number smaller than 25 inclusive.

A Sub-Critical Barrier Thickness Normally-Off AlGaN/GaN MOS-HEMT

Abstract: A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al 0.25 Ga 0.75 N) barrier layer and relies on an induced two-dimensional electron gas for operation is presented. Single finger devices were fabricated using 10 and 20 nm plasma-enhanced chemical vapor-deposited silicon dioxide (SiO 2 ) as the gate dielectric. They demonstrated threshold voltages (V th ) of 3 and 2 V, and very high maximum drain currents (IDSmax) of over 450 and 650 mA/mm, at a gate voltage (V GS ) of 6 V, respectively. The proposed device is seen as a building block for future power electronic devices, specifically as the driven device in the cascode configuration that employs GaN-based enhancement-mode and depletion-mode devices.

Light-emitting diode package and method of manufacturing the same

Abstract: A light-emitting diode (LED) package and a method of manufacturing the same are provided The LED package includes a package mold, an LED chip located on a surface of the package mold, and a wavelength converter located on the surface of the package mold and separated from the LED chip The wavelength converter includes a first barrier layer located on the surface of the package mold, a wavelength conversion layer located on the first barrier layer, and a second barrier layer located on the wavelength conversion layer

The surface mixed layer heat budget from mooring observations in the central Indian Ocean during Madden–Julian Oscillation events

Abstract: The oceanic surface mixed layer heat budget in the central equatorial Indian Ocean is calculated from observations at two mooring sites (0°S 79°E and 1.5°S 79°E) during three active and calm phases of Madden–Julian Oscillation (MJO) events between September 2011 and January 2012. At both mooring locations, the surface mixed layer is generally heated during MJO calm phases. During MJO active phases at both mooring locations, the surface mixed layer is always cooled by the net surface heat flux and also sometimes by the turbulent heat flux at the bottom of the surface mixed layer. The turbulent heat flux at the bottom of the surface mixed layer, however, varies greatly among different MJO active phases and between the two mooring locations. A barrier layer exerts control on the turbulent heat flux at the base of the surface mixed layer; we quantify this barrier layer strength by a “barrier layer potential energy,” which depends on the thickness of the barrier layer, the thickness of the surface mixed layer, and the density stratification across the isothermal layer. During one observed MJO active phase, a strong turbulent heat flux into the mixed layer was diagnosed, despite the presence of a 10−20 m thick barrier layer. This was due to the strong shear across the barrier layer driven by the westerly winds, which provided sufficient available kinetic energy to erode the barrier layer. To better simulate and predict net surface heat fluxes and the MJO, models must estimate the oceanic barrier layer potential energy, background shear, stratification, and surface forcing accurately.

Effects of Interannual Salinity Variability on the Barrier Layer in the Western-Central Equatorial Pacific: A Diagnostic Analysis from Argo

Abstract: In this paper, interannual variations in the barrier layer thickness (BLT) are analyzed using Argo three-dimensional temperature and salinity data, with a focus on the effects of interannually varying salinity on the evolution of the El Nino-Southern Oscillation (ENSO). The interannually varying BLT exhibits a zonal seesaw pattern across the equatorial Pacific during ENSO cycles. This phenomenon has been attributed to two different physical processes. During El Nino (La Nina), the barrier layer (BL) is anomalously thin (thick) west of about 160°E, and thick (thin) to the east. In the western equatorial Pacific (the western part: 130°–160°E), interannual variations of the BLT indicate a lead of one year relative to those of the ENSO onset. The interannual variations of the BLT can be largely attributed to the interannual temperature variability, through its dominant effect on the isothermal layer depth (ILD). However, in the central equatorial Pacific (the eastern part: 160°E–170°W), interannual variations of the BL almost synchronously vary with ENSO, with a lead of about two months relative to those of the local SST. In this region, the interannual variations of the BL are significantly affected by the interannually varying salinity, mainly through its modulation effect on the mixed layer depth (MLD). As evaluated by a one-dimensional boundary layer ocean model, the BL around the dateline induced by interannual salinity anomalies can significantly affect the temperature fields in the upper ocean, indicating a positive feedback that acts to enhance ENSO.

Impact of humidity on functionality of on-paper printed electronics

Abstract: A multilayer coated paper substrate, combining barrier and printability properties was manufactured utilizing a pilot-scale slide curtain coating technique. The coating structure consists of a thin mineral pigment layer coated on top of a barrier layer. The surface properties, i.e. smoothness and surface porosity, were adjusted by the choice of calendering parameters. The influence of surface properties on the fine line printability and conductivity of inkjet-printed silver lines was studied. Surface roughness played a significant role when printing narrow lines, increasing the risk of defects and discontinuities, whereas for wider lines the influence of surface roughness was less critical. A smooth, calendered surface resulted in finer line definition, i.e. less edge raggedness. Dimensional stability and its influence on substrate surface properties as well as on the functionality of conductive tracks and transistors were studied by exposure to high/low humidity cycles. The barrier layer of the multilayer coated paper reduced the dimensional changes and surface roughness increase caused by humidity and helped maintain the conductivity of the printed tracks. Functionality of a printed transistor during a short, one hour humidity cycle was maintained, but a longer exposure to humidity destroyed the non-encapsulated transistor.