Showing papers on "Barrier layer published in 2019"
TL;DR: This review presents recent developments, and discusses the preparation methods, performance, and applications of SiNxOy film.
Abstract: Silicon oxynitride (SiNxOy) is a highly promising functional material for its luminescence performance and tunable refractive index, which has wide applications in optical devices, non-volatile memory, barrier layer, and scratch-resistant coatings. This review presents recent developments, and discusses the preparation methods, performance, and applications of SiNxOy film. In particular, the preparation of SiNxOy film by chemical vapor deposition, physical vapor deposition, and oxynitridation is elaborated in details.
54 citations
53 citations
TL;DR: In this paper, n-type degenerate doping in β-(Al0.26Ga0.74)2O3 epitaxial thin films grown by metalorganic vapor-phase epitaxy and modulation doping was reported.
Abstract: We report on n-type degenerate doping in β-(Al0.26Ga0.74)2O3 epitaxial thin films grown by metalorganic vapor-phase epitaxy and modulation doping in β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructures. Alloy composition is confirmed using high-resolution X-ray diffraction measurements. Carrier concentration in the thin films is proportional to the silane molar flow. Room-temperature Hall measurements showed a high carrier concentration of 6 × 1018 cm–3 to 7.3 × 1019 cm−3 with a corresponding electron mobility between 53–27 cm2 V–1 s–1 in uniformly doped β-(Al0.26Ga0.74)2O3 layers. Modulation doping is used to realize a total electron sheet charge of 2.3 × 1012 cm−2 in a β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructure using a uniformly doped β-(Al0.26Ga0.74)2O3 barrier layer and a thin spacer layer.
50 citations
Patent•
08 Aug 2019
TL;DR: In this article, a thin film encapsulation structure of an organic EL display device (100) has a first inorganic barrier layer, an organic barrier layer (14) in contact with an upper surface of the first INO barrier layer and having a plurality of solid portions discretely dispersed therein.
Abstract: To provide an organic EL display device including a thin film encapsulation structure, in which a yield can be improved.SOLUTION: A thin film encapsulation structure (10) of an organic EL display device (100) has a first inorganic barrier layer (12), an organic barrier layer (14) in contact with an upper surface of the first inorganic barrier layer (12) and having a plurality of solid portions discretely dispersed therein, and a second inorganic barrier layer (16) in contact with the upper surface of the first inorganic barrier layer (12) and an upper surface of the solid portion of the organic barrier layer (14). The organic barrier layer (14) shows a black color. The structure also has a bank layer (48) defining each pixel; and the bank layer has an inclined surface enclosing a periphery of the pixel. The solid portion has a pixel peripheral solid portion ranging from a portion on an inclined surface of the first inorganic barrier layer to the periphery in the pixel; the portion on the inclined surface of the first inorganic barrier layer has lyophilicity to a photosensitive resin; and the surface of a flat portion of the first inorganic barrier layer in a region enclosed by the bank layer has liquid repellency to the photosensitive resin.SELECTED DRAWING: Figure 6
48 citations
42 citations
TL;DR: In this article, the physicochemical alterations induced by electrochemical passivation of the surface oxide film providing corrosion resistance to 316L stainless steel were combined with in situ photo-current spectroscopy and electrochemical analysis.
Abstract: Time of Flight Secondary Ion Mass Spectroscopy, X-Ray Photoelectron Spectroscopy, in situ Photo-Current Spectroscopy and electrochemical analysis were combined to characterize the physicochemical alterations induced by electrochemical passivation of the surface oxide film providing corrosion resistance to 316L stainless steel. The as-prepared surface is covered by a ~2 nm thick, mixed (Cr(III)-Fe(III)) and bi-layered hydroxylated oxide. The inner layer is highly enriched in Cr(III) and the outer layer less so. Molybdenum is concentrated, mostly as Mo(VI), in the outer layer. Nickel is only present at trace level. These inner and outer layers have band gap values of 3.0 and 2.6-2.7 eV, respectively, and the oxide film would behave as an insulator. Electrochemical passivation in sulfuric acid solution causes the preferential dissolution of Fe(III) resulting in the thickness decrease of the outer layer and its increased enrichment in Cr(III) and Mo(IV-VI). The further Cr(III) enrichment of the inner layer causes loss of photoactivity and improved corrosion protection with the anodic shift of the corrosion potential and the increase of the polarization resistance by a factor of ~4. Aging in the passive state promotes the Cr enrichment in the inner barrier layer of the passive film.
37 citations
TL;DR: In this paper, a hierarchical thin-film nanofibrous composite (TFNC) membrane with electrospun mat as substrate and hydrophilic nanocellulose as the antifouling barrier layer was developed.
36 citations
TL;DR: It is found that excess amounts of Na and Se are essential for the MoSe2 growth, and the excessive Na in the form of Na2Sex at the CIGS/Mo interface works as a Se source and catalyses theMoSe2 formation.
Abstract: The influence of Na diffusion from various glass substrates during a high-temperature slenization process on the microstructure and morphology of two-step formed CIGS absorber layers is investigated. In order to minimise the CIGS absorber formation time, elemental Se vapour is used to prepare the CIGS absorber. The grain sizes of the CIGS films are found to increase with increasing sodium in the glass substrates (extra clear glass, soda-lime glass, borosilicate glass). TiN and SiN thin films are used as diffusion barrier layers inserted between the glass substrate and the Mo rear conatct to tune the Na diffusion from the soda-lime glass. The interdiffusion between the In-rich CuInSe2 surface layer and the Ga-rich CuGaSe2 layer is promoted by the barrier layer, leading to larger CIGS grains. Efforts are also taken to understand the differences in Na diffusion (from the glass substrates) and their effects on the MoSe2 intermediate layer formation during the high-temperature CIGS absorber formation processes. We find that excess amounts of Na and Se are essential for the MoSe2 growth. The excessive Na in the form of Na2Sex at the CIGS/Mo interface works as a Se source and catalyses the MoSe2 formation. The Se flow in the two-step CIGS formation process must be sufficiently high to obtain high-efficiency CIGS solar cells.
34 citations
TL;DR: In this paper, the physicochemical alterations induced by electrochemical passivation of the surface oxide film providing corrosion resistance to 316L stainless steel were combined with in situ photo-current spectroscopy and electrochemical analysis.
Abstract: Time of Flight Secondary Ion Mass Spectroscopy, X-Ray Photoelectron Spectroscopy, in situ Photo-Current Spectroscopy and electrochemical analysis were combined to characterize the physicochemical alterations induced by electrochemical passivation of the surface oxide film providing corrosion resistance to 316L stainless steel. The as-prepared surface is covered by a ~2 nm thick, mixed (Cr(III)-Fe(III)) and bi-layered hydroxylated oxide. The inner layer is highly enriched in Cr(III) and the outer layer less so. Molybdenum is concentrated, mostly as Mo(VI), in the outer layer. Nickel is only present at trace level. These inner and outer layers have band gap values of 3.0 and 2.6-2.7 eV, respectively, and the oxide film would behave as an insulator. Electrochemical passivation in sulfuric acid solution causes the preferential dissolution of Fe(III) resulting in the thickness decrease of the outer layer and its increased enrichment in Cr(III) and Mo(IV-VI). The further Cr(III) enrichment of the inner layer causes loss of photoactivity and improved corrosion protection with the anodic shift of the corrosion potential and the increase of the polarization resistance by a factor of ~4. Aging in the passive state promotes the Cr enrichment in the inner barrier layer of the passive film.
33 citations
TL;DR: In this paper, the relationship between the pore parameters and the mechanical properties and corrosion resistance of anodic films is studied, and it is suggested that the porosity should be controlled below 30% from the view of corrosion protection.
32 citations
TL;DR: In this article, a thermoelectric (TE) module with Ni (NiTM) and without Ni (TM) layer was fabricated by using Sn96.5Ag3Cu0.5Sb1.5 and SAC305.
TL;DR: During the BoB Boundary Layer Experiment (BoBBLE) in the southern BoB, time series of microstructure measurements were obtained at 8°N, 89°E from 4 to 14 July 2016 as discussed by the authors.
Abstract: During the Bay of Bengal (BoB) Boundary Layer Experiment (BoBBLE) in the southern BoB, time series of microstructure measurements were obtained at 8°N, 89°E from 4 to 14 July 2016. These ob...
TL;DR: In this paper, the authors showed that the thickness of the TiC layer increased with increasing diffusion temperature and holding time, and that the orientation of Ti grains influenced the activation energy for the growth of TiC.
TL;DR: In this paper, a spin-coated GDC barrier layer was applied to the surface of a yttrium-stabilized zirconia (YSZ) electrolyte without delamination at a low annealing temperature.
Patent•
01 Feb 2019
TL;DR: In this article, a display panel consisting of a first base layer, a barrier layer, and a second base layer arranged on the barrier layer was described, and an inorganic high-temperature-resistant bonding layer was used for bonding the base layer and the barrier.
Abstract: The invention discloses a display panel, a preparation method thereof and a display device. The display panel comprises a first base layer, a barrier layer arranged on the first base layer, a second base layer arranged on the barrier layer, a first high-temperature-resistant bonding layer used for bonding the first base layer and the barrier layer; and a second high-temperature-resistant bonding layer used for bonding the barrier layer and the second base layer. According to the display panel, the preparation method and the display device, an inorganic high-temperature-resistant bonding layeris coated between the base layer and the barrier layer, so that the base layer and the barrier layer are bonded more firmly. The bending performance of the base layer is improved, and the breakage risk between the base layer and the barrier layer is reduced. Therefore, the bending capacity of the flexible display panel is improved, and the product yield and the product tolerance are improved.
TL;DR: In this article, an extensive study is carried out via theoretical simulation to determine the electrical and optical characteristics of AlGaN based multi-quantum well near-ultra violet light emitting diodes (MQW-UV-LED) for the emission wavelength of 353nm.
Abstract: In this paper, an extensive study is carried out via theoretical simulation to determine the electrical and optical characteristics of AlGaN based multi-quantum well near-ultra violet light emitting diodes (MQW-UV-LED) for the emission wavelength of 353 nm. The structure and characteristics of epitaxial layers used in UV-LEDs play a significant role in the performance of the device. We have studied dependence of device output characteristics on its layer structure and optimized the structure properties to improve the performance of the device. During the optimization process, thickness of quantum well layers, thickness of barrier layers, composition of electron blocking layer (EBL) and composition of barrier layer have been changed to their optimal values. In order to calculate the wavefunction, carrier densities, and discrete energy levels within the quantum well, a 6 × 6 Kohn–Luttinger Hamiltonian has been solved. A final structure with optimized values has been proposed in the end. The optimal values for quantum well thickness and barrier thickness are found to be 3.5 nm and 6 nm respectively. Optimum values from aluminium concentration in EBL and barriers are found to be 40% and 22% respectively. The output characteristics of the final device have been simulated and results are demonstrated. The performance of final device for varying temperature have also been simulated and displayed. The results achieved n this work may be beneficial to the entire opto-electronics community.
TL;DR: In this paper, the authors demonstrate the amplification of surface acoustic waves through the application of dc electric fields in low sheet density heterostructures of AlxGa1−xN barrier layers over GaN grown by metal organic chemical vapor deposition on a sapphire substrate.
Abstract: This letter demonstrates amplification of surface acoustic waves through the application of dc electric fields in low sheet density heterostructures of AlxGa1−xN barrier layers over GaN grown by metal organic chemical vapor deposition on a sapphire substrate. The use of the GaN material offers a convenient platform to study acoustoelectric (AE) effects, due to its piezoelectricity and the ability to support a two-dimensional electron gas at the interface with the barrier. In this work, low Al molar fractions (between 6% and 10%) in the barrier layer are investigated to tune the sheet resistivity, which is a key aspect to realizing appreciable AE gains. Rayleigh waves in GaN at 920 MHz exhibit non-reciprocity (defined as the contrast in the peak amplitude of the amplified forward traveling wave and the attenuated reverse traveling wave) of up to 6.5 dB/mm under the influence of dc bias fields applied to a 24 nm Al0.07Ga0.93N barrier over GaN on sapphire. Gain dependence on the sheet resistance is also observed, consistent with the AE effect. This work demonstrates an approach to counteract acoustic propagation losses in GaN, which can be implemented in long delay lines for RF signal processing, in addition to other applications.
TL;DR: In this article, a theoretical numerical simulation model was established to describe the fluid flow more precisely, and the production characteristics of SAGD under the influence of different numbers of barrier layers were analyzed by comparing the development of the steam chamber.
TL;DR: In this paper, a detailed analysis of barrier layer nano-porosity by TEM and TKD has revealed that the oxide grain structure is much more disorganised and the nanoporosity network better developed in the rapidly oxidising post-transition alloy.
TL;DR: In this paper, the properties of the diffusion barrier for CZTSSe solar cells are investigated by X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), and scanning electron microscopy (SEM).
Abstract: Stainless steel (SS) foil is made of abundant materials and is a durable and flexible substrate, but the efficiency of a solar cell on SS foil deteriorates via the diffusion of impurities from the SS substrate into a Cu2ZnSn(S,Se)4 (CZTSSe) absorber layer. In this work, the properties of the diffusion barrier for CZTSSe solar cells is investigated by X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), and scanning electron microscopy (SEM). The industrially relevant oxide materials ZnO and SiO2 are used as diffusion barriers against impurities. The formation of a ZnSe reaction with Se degrades the barrier properties of the ZnO barrier layer. As a result, ZnO fails to act as a diffusion barrier, and Fe is observed in the absorber layer. On the other hand, the intrinsic diffusion barrier properties of SiO2 are superior to those of ZnO, and SiO2 is a stable diffusion barrier even after selenization. Therefore, SiO2 was applied to flexible solar cells, and a power conversion efficiency of 10.30%, the highest efficiency for CZTSSe on SS foil, was obtained.
TL;DR: In this paper, a spray-coated diamine-dithiol-based CIGS solar cell was used as a back contact barrier against selenium diffusion during high temperature selenization.
Abstract: Delamination and high series resistance due to excessively thick MoSe2 are commonly found in solution-processed CIGS solar cells. This work shows the effective functionality of Mo–N as a back contact barrier against selenium diffusion during high temperature selenization. Mo–N barrier layers are deposited by reactive D.C. magnetron sputtering. The Mo–N barrier layer significantly reduces MoSe2 formation at the Mo/CIGS interface and consequently improves adhesion properties and enhances crystallinity of the CIGS absorber. The power conversion efficiency (PCE) of a spray-coated diamine–dithiol based CIGS solar cell improved from our previously published 9.8% to 12.0% after application of the Mo–N back contact barrier layer.
TL;DR: In this article, a wet powder spraying method has been investigated as a facile low cost route to deposit electrode layer on SOFC electrolyte support, and a particular focus has been examined the interfacial stability of the deposited layers, and determining the influence of the thickness of the different layers, as well as the ball milling regime used to produce the electrode inks.
TL;DR: In this paper, the effect of the plastic metallic barrier layer (Cu) on crack propagation was investigated and it was shown that the Cu layer improved the anti-crack-propagation ability of the coating.
Abstract: The interfacial reactions of the plastic Cu-metal barrier layer in the Al2O3–40 wt% TiO2 (AT40) composite coating prepared by plasma spraying and its effect on the crack propagation behaviour during thermal cycling were investigated. The phenomena of Cu dendrites appearing on the upper surface of the Cu layer and the Cu whiskers growing along the crack of the ceramic coating under the Cu layer after thermal cycling (900 °C, Ar), and the formation mechanism are explained using FE-SEM, XRD, EPMA, and EBSD. The Cu dendritic and Cu whiskers changed the stress state of the interface and enhanced the anti-crack-propagation ability of the coating. In addition, nanoparticles surrounding the Cu layer using EBSD were observed in the Cu particles added to the AT40 coatings (C-AT coating) by plasma spraying. The calculations of surface energy indicated that the nanoparticles improved the wettability of the interface and promoted the interfacial coupling behaviour. A model of the relationship between stress and crack propagation in the process of heating and cooling was used to analyse the effect of the plastic metallic-barrier layer (Cu) on crack propagation. This work demonstrates that the Cu layer improved the anti-crack-propagation ability of the coating. Such C-AT coatings may find potential applications in high-temperature materials and wear-resistant material surfaces.
TL;DR: This work proposes a new concept to design high performance FTJs based on the ferroelectric/polar-oxide composite barriers and suggests a new direction for creating FTJs with a stable and reversible ferro electric polarization, a sizable TER effect and a low resistance-area product, as required for memory applications.
Abstract: Ferroelectric tunnel junctions (FTJs) have recently aroused significant interest due to the interesting physics controlling their properties and potential application in nonvolatile memory devices....
TL;DR: In this article, quantum dot light-emitting diodes (QLEDs) are used as the basis of next-generation displays and have consequently been extensively investigated with the aim of commercialization.
Abstract: Quantum dot light-emitting diodes (QLEDs) are expected to be the basis of next-generation displays and have consequently been extensively investigated with the aim of commercialization. Herein, QLE...
TL;DR: A high breakdown voltage (BV) and low dynamic ON-resistance (RON, D) AlGaN/GaN high electron mobility transistor (HEMT) is proposed and experimentally demonstrated by implanting fluorine ions in the thick SiNx passivation layer between the gate and drain electrodes.
Abstract: In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (RON, D) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiNx passivation layer between the gate and drain electrodes. Instead of the fluorine ion implantation in the thin AlGaN barrier layer, the peak position and vacancy distributions are far from the two-dimensional electron gas (2DEG) channel in the case of fluorine ion implantation in the thick passivation layer, which effectively suppresses the direct current (DC) static and pulsed dynamic characteristic degradation. The fluorine ions in the passivation layer also extend the depletion region and increase the average electric field (E-field) strength between the gate and drain, leading to an enhanced BV. The BV of the proposed HEMT increases to 803 V from 680 V of the conventional AlGaN/GaN HEMT (Conv. HEMT) with the same dimensional parameters. The measured RON, D of the proposed HEMT is only increased by 23% at a high drain quiescent bias of 100 V, while the RON, D of the HEMT with fluorine ion implantation in the thin AlGaN barrier layer is increased by 98%.
TL;DR: The unipolar MWIR nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (0, 1/3) substrates were created in this article.
Patent•
15 Mar 2019
TL;DR: In this article, a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method for the fabrication of a multi-quantum-well layer of the gallium-nide-based LED was presented, which consists of a plurality of quantum well layers and quantum barrier layers.
Abstract: The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. A multi-quantum-well layer of the gallium nitride-based light-emitting diode epitaxial wafer comprises a plurality of quantum well layers and quantum barrier layers, wherein the quantum well layers and the quantum barrier layers are alternately grown, and each quantum well layer comprises a plurality of layers of InxGa1-xN quantum well sub-layers, wherein the In content in the plurality of layers of quantum well sub-layers is gradually increased and then gradually decreased layer by layer along the stacking direction of the epitaxial wafer; each quantum barrier layer comprises multiple layers of Si-doped ByGa1-yN quantum barrier sub-layers, wherein the B content in the plurality of layers of quantum barrier sub-layers is gradually increased and then gradually decreased layer by layer along the stacking direction of the epitaxial wafer; and x is greater than or equal to 0 and less than or equal to 1, and y is more than or equal to 0 and less than or equal to 1. According to the gallium nitride-based light-emitting diode epitaxial wafer provided by the invention, the distribution uniformity of electrons in the quantum wells can be improved, so that the radiation recombination rate of electrons and holes in the multi-quantum wells is improved, and the luminous efficiency of the LED is further improved.
TL;DR: In this article, the ability to use the magnetron sputtering deposition technique to synthesize YSZ electrolyte and GDC barrier layer for a solid oxide cell is studied.
Abstract: In this work, the ability to use the magnetron sputtering deposition technique to synthesize YSZ electrolyte and GDC barrier layer for a solid oxide cell is studied. A particular attention is paid to optimize the YSZ/GDC interface in order to promote adhesion between the layers and the global ionic conductivity. First successive deposition of YSZ and GDC is investigated which leads to the formation of bilayer structure. Then co-deposition of both compounds is carried out in order to obtain a chemical composition gradient, ensuring a smooth transition from the electrolyte to the barrier layer. The potential use of those deposits in solid oxide cell is evaluated after annealing at 1100 °C for 3 h in air. Finally, cells with bilayer or gradient deposits are tested at a temperature of 800 °C and at a reactive gas flow rate of 24 N mL·min−1·cm−2 on the hydrogen side of the cell. A power density of 0.94 W·cm−2 at 700 mV in SOFC mode and a current density of −1.4 A·cm−2 at 1.3 V in HTE mode are obtained.
TL;DR: In this article, the effect of temperature on the electrochemical behavior of Alloy 690 was investigated in oxygenated borate buffer solution containing H 3 B O 3 (2000 ppm B )+ L i O H (2 ppm L i ).