Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

/pdf/fundamentals-of-modern-vlsi-devices-471xd7l9pf.pdf

Fundamentals of Modern VLSI Devices

This document provides updates to IEEE Std 802.16's MIB for the MAC, PHY and asso- ciated management procedures in order to accommodate recent extensions to the standard.

IEEE Standard for Local and Metropolitan Area Networks Part 16: Air Interface for Fixed Broadband Wireless Access Systems Draft Amendment: Management Information Base Extensions

Massive multiple-input multiple-output MIMO is one of themost promising technologies for the next generation of wirelesscommunication networks because it has the potential to providegame-changing improvements in spectral efficiency SE and energyefficiency EE. This monograph summarizes many years ofresearch insights in a clear and self-contained way and providesthe reader with the necessary knowledge and mathematical toolsto carry out independent research in this area. Starting froma rigorous definition of Massive MIMO, the monograph coversthe important aspects of channel estimation, SE, EE, hardwareefficiency HE, and various practical deployment considerations.From the beginning, a very general, yet tractable, canonical systemmodel with spatial channel correlation is introduced. This modelis used to realistically assess the SE and EE, and is later extendedto also include the impact of hardware impairments. Owing tothis rigorous modeling approach, a lot of classic "wisdom" aboutMassive MIMO, based on too simplistic system models, is shownto be questionable.

https://www.nowpublishers.com/article/DownloadSummary/SIG-093

Massive MIMO Networks: Spectral, Energy, and Hardware Efficiency

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

A power amplifier (PA) for a femto-cell base station should be highly efficient, linear and small. The efficiency for amplification of a high peak-to-average power ratio (PAPR) signal was improved by designing an asymmetric Doherty PA (DPA). The linearity was improved by applying third-order inter-modulation (IM3) cancellation method. A small size is achieved by designing the DPA using GaN MMIC process. The implemented 2-stage DPA delivers a power-added efficiency (PAE) of 38.6% and a gain of 33.4 dB with an average power of 34.2 dBm for a 7.2 dB PAPR 10 MHz bandwidth LTE signal at 2.14 GHz.

Highly Linear 2-stage Doherty Power Amplifier Using GaN MMIC

A highly linear power amplifier (PA) at Ka-band is implemented in 28-nm bulk CMOS process. Operating at a deep class-AB mode with appropriate 2nd harmonic control circuit, a highly linear and efficient PA is designed at mmwave band. This PA architecture provides a linear PA operation closer to the saturated power, providing high efficiency. Also elaborated harmonic tuning and neutralization techniques are used to further improve the gain and stability. A 2-stack PA is designed for higher gain and output power than a common source PA. Additionally, the memory effect of the PA is suppressed to increase the video bandwidth in the GHz range. This amplifier is quite suitable for 5G application.

Linear PA at mm-Wave band for 5G application

This paper presents an envelope shaping function of the hybrid switching amplifier (HSA) to achieve high efficiency. In the envelope tracking (ET) transmitter, the switch current of HSA can not follow the wideband load current due to limitation of the switching frequency. Thus, the switch operates as a quasi-constant current source and the sourcing and the sinking currents of the linear stage generates the accurate load current. The sinking current is a critical efficiency reduction factor since it is a wasted power. To reduce the sinking current, the gate bias of the PA should be increased, so that the sinking current is delivered to the PA and is utilized for amplification. The efficiency of the HSA can be increased over 80% from around 70%. The implemented ET transmitter using Cree CGH40045 GaN HEMT achieves drain efficiency of 59.1% at 40.3 dBm output power for long term evolution 10-MHz signal with 6.5 dB PAPR at 889MHz. Moreover, the ET transmitter could be linearized to −45 dBc with using the digital predistortion technique.

http://ieeexplore.ieee.org/iel5/6089237/6102757/06102889.pdf

Highly efficient envelope tracking transmitter by utilizing sinking current

This work proposes a new offset line of carrier PA for Doherty power amplifier (PA). The carrier PA of conventional Doherty PA (DPA) delivers lower efficiency at back-off output power than at peak output power due to the phase mismatch of the carrier offset line in implementation, because the efficiency at back-off power is very sensitive to the output impedance change. To solve the problem, a new offset line for the carrier PA is adopted optimizing the efficiency performance at back-off output power, while it maintains the output peak power. A Doherty PA with the concept is designed using 45 W gallium nitride (GaN) high electron mobility transistors (HEMT) for the carrier and peaking cells at 1.94 GHz. The measured average output power, drain/power-added efficiencies and gain are 43.6 dBm, 60.7/56.9%, and 12 dB for a 10MHz long term evolution (LTE) signal with a 6.5 dB peak-to-average power ratio (PAPR).

Optimized Doherty power amplifier with a new offset line

This paper discusses design challenges and strategies for aggressively increasing energy efficiency of biosignal monitoring sensors. For the holistic understanding of energy efficiency, we introduce Energy Efficiency metric for all sensor communication blocks which include not only Rx/Tx RF&Analog, PLL and DSP/Modem but also Antenna and Power Management. Based on the metric, an ultra-low energy sensor node design at 2.36∼2.5GHz is addressed from RFIC, DSP/Modem to Antenna. To tackle the stringent power requirements, we theoretically revisit the technology, circuits, architecture and system and explore the cross-layer power minimization algorithm.

Bumman Kim

Papers

Highly Linear 2-stage Doherty Power Amplifier Using GaN MMIC

Linear PA at mm-Wave band for 5G application

Highly efficient envelope tracking transmitter by utilizing sinking current

Optimized Doherty power amplifier with a new offset line

Challenges and directions of ultra low energy wireless sensor nodes for biosignal monitoring