Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

/pdf/fundamentals-of-modern-vlsi-devices-471xd7l9pf.pdf

Fundamentals of Modern VLSI Devices

This document provides updates to IEEE Std 802.16's MIB for the MAC, PHY and asso- ciated management procedures in order to accommodate recent extensions to the standard.

IEEE Standard for Local and Metropolitan Area Networks Part 16: Air Interface for Fixed Broadband Wireless Access Systems Draft Amendment: Management Information Base Extensions

Massive multiple-input multiple-output MIMO is one of themost promising technologies for the next generation of wirelesscommunication networks because it has the potential to providegame-changing improvements in spectral efficiency SE and energyefficiency EE. This monograph summarizes many years ofresearch insights in a clear and self-contained way and providesthe reader with the necessary knowledge and mathematical toolsto carry out independent research in this area. Starting froma rigorous definition of Massive MIMO, the monograph coversthe important aspects of channel estimation, SE, EE, hardwareefficiency HE, and various practical deployment considerations.From the beginning, a very general, yet tractable, canonical systemmodel with spatial channel correlation is introduced. This modelis used to realistically assess the SE and EE, and is later extendedto also include the impact of hardware impairments. Owing tothis rigorous modeling approach, a lot of classic "wisdom" aboutMassive MIMO, based on too simplistic system models, is shownto be questionable.

https://www.nowpublishers.com/article/DownloadSummary/SIG-093

Massive MIMO Networks: Spectral, Energy, and Hardware Efficiency

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

This letter presents a broadband saturated power amplifier (PA) using the harmonic control circuits for base station application. The saturated PA has advantages for broadband operation with high efficiency due to the large tolerance of the second harmonic tuning. However, it is difficult to simultaneously achieve the fundamental and second harmonic impedance matching across a wide bandwidth. To solve the problem, the harmonic control circuits are placed at the input and output of the device's die. These harmonic control circuits play a role of leading the second harmonic impedances to the optimum regions but are specially designed to be insensitive to the following fundamental matching circuit. The saturated PA with the harmonic control circuit is designed using a 120 W GaN device, achieving a high efficiency and wide bandwidth characteristics simultaneously. The measured output power, drain efficiency, and gain are at least 51.0 dBm, 71.0%, and 8.22 dB at the saturation across the 1.75 to 2.17 GHz (21% relative bandwidth) under pulse test (10% duty). This saturated PA also delivers good performances for long term evolution (LTE) and wideband code division multiple access (WCDMA) modulated signals at 1.85 and 2.14 GHz, respectively. These results show that the broadband saturated PA with the harmonic control circuit is suitable to wide bandwidth multimode/multiband applications.

Broadband Saturated Power Amplifier With Harmonic Control Circuits

mm-wave monolithic GaAs power FET amplifiers

In this paper, we present a new silicon RF LDMOSFET large-signal model including a self-heating effect. A new empirical channel current model suited for accurately predicting intermodulation distortion is employed. The proposed channel current model can represent transconductance (gm) saturation and rolloff in the continuous manner. It has continuous higher order derivatives for accurate prediction of nonlinear microwave circuit behavior, such as power amplifiers, microwave mixers, oscillators, etc. Using the complete large-signal model, we have designed and implemented a 1.2 GHz power amplifier. The measured and simulated amplifier characteristics, especially the intermodulation and harmonic behaviors, are in good agreement.

Accurate RF large-signal model of LDMOSFETs including self-heating effect

A wideband envelope tracking power amplifier, which is robust to battery depletion, is introduced. An integrated boost converter keeps a stable operation of the PA supply modulator. Even at the battery depletion from 4.2V to 2.8V, there is no significant degradation of output power and linearity in the power amplifier. Moreover, the efficiency degradation by the additional regulator is minimized for the novel supply modulator architecture proposed in this work. The fabricated 2.535GHz envelope tracking power amplifier presents max/min power-added efficiencies of 32.3/26.2% for 10MHz BW 3GPP LTE standard along the battery voltage from 4.2V to 2.8V.

Envelope tracking power amplifier robust to battery depletion

This paper presents an approach to maximize the gain and power-added efficiency (PAE) of a Doherty power amplifier (PA) using a 0.25 $\mu$ m GaN pHEMT. The conventional carrier PA has an input matching for the ${R}_{\rm OPT}$ load and does not deliver the 3 dB higher gain with ${2R}_{\rm OPT}$ load due to the mismatch and it degrades gain and PAE of the PA. To solve the problem, the input match of the carrier PA is optimized at the back-off power level with the ${2R}_{\rm OPT}$ output load, while the input is mismatched at a high power level. A Doherty PA with the concept is designed and implemented using a GaN pHEMT MMIC process at 1.8 GHz. The measured average output power, power-added efficiency and gain are 35.6 dBm, 56.3%, and 18.9 dB for a 10 MHz LTE signal with a 6.5 dB PAPR.

Bumman Kim

Papers

Broadband Saturated Power Amplifier With Harmonic Control Circuits

mm-wave monolithic GaAs power FET amplifiers

Accurate RF large-signal model of LDMOSFETs including self-heating effect

Envelope tracking power amplifier robust to battery depletion

GaN HEMT MMIC Doherty Power Amplifier With High Gain and High PAE