Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

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Fundamentals of Modern VLSI Devices

This document provides updates to IEEE Std 802.16's MIB for the MAC, PHY and asso- ciated management procedures in order to accommodate recent extensions to the standard.

IEEE Standard for Local and Metropolitan Area Networks Part 16: Air Interface for Fixed Broadband Wireless Access Systems Draft Amendment: Management Information Base Extensions

Massive multiple-input multiple-output MIMO is one of themost promising technologies for the next generation of wirelesscommunication networks because it has the potential to providegame-changing improvements in spectral efficiency SE and energyefficiency EE. This monograph summarizes many years ofresearch insights in a clear and self-contained way and providesthe reader with the necessary knowledge and mathematical toolsto carry out independent research in this area. Starting froma rigorous definition of Massive MIMO, the monograph coversthe important aspects of channel estimation, SE, EE, hardwareefficiency HE, and various practical deployment considerations.From the beginning, a very general, yet tractable, canonical systemmodel with spatial channel correlation is introduced. This modelis used to realistically assess the SE and EE, and is later extendedto also include the impact of hardware impairments. Owing tothis rigorous modeling approach, a lot of classic "wisdom" aboutMassive MIMO, based on too simplistic system models, is shownto be questionable.

https://www.nowpublishers.com/article/DownloadSummary/SIG-093

Massive MIMO Networks: Spectral, Energy, and Hardware Efficiency

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

This paper describes a highly efficient class-E power amplifier. The design has been carried out at 1 GHz using a LDMOS transistor with 10 W of peak envelope power (PEP). Drain efficiency of 76.1%, power-added efficiency (PAE) of 73.6%, and gain of 14.8 dB are achieved at an output power of 39.1 dBm for a continuous wave (CW) signal. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 783–789, 2006; Pubished online in Wiley InterScience (www.interscience.wiley.com) DOI 10.1002/mop.21476

Highly efficient LDMOS power amplifier based on class‐E topology

A microstrip GaAs FET oscillator using a 75 × 0.25 μm device has achieved an output power of 10 mW with an efficiency of 10% at 36 GHz. This oscillator was intended for local-oscillator applications at Q-band.

High-efficiency Q-band GaAs FET oscillator

The effect of the peaking offset line on the Doherty amplifier operation is investigated. The peaking amplifier of the Doherty structure operates at a C-bias condition for the load modulation. With the C-bias, the amplifier has a poor AM-PM characteristic due to the nonlinear input/output capacitances. The nonlinear phase variation of the peaking amplifier influences the load modulation behavior and reduces efficiency of the Doherty amplifier at a high output power region. To mitigate the nonlinear PM characteristic of the peaking amplifier, the length of the peaking offset line should be reduced from the conventional offset line. To validate the offset line design, a 2-stage Doherty amplifier is implemented at 2.655 GHz using GaN pHEMT. Due to the proper load modulation, the Doherty PA delivers a very good performance. For the LTE signal with 20 MHz bandwidth and 7.2 dB peak-to-average power ratio (PAPR), the amplifier delivers a power-added efficiency (PAE) of 49.3% and gain of 25 dB at an average output power of 49 dBm.

Mitigating Phase Variation of Peaking Amplifier Using Offset Line

We present a novel and robust direct extraction method for hybrid-n equivalent circuit model of HBT. This method can accurately resolve the most important internal parameters from the measured S-parameters, and is not sensitive to the values of parasitic parameters. We derive some analytical expressions for the parameters. These analytical expressions for hybrid-n equivalent circuit of HBT ensure robust, fast, and reliable parameter extraction.

http://ieeexplore.ieee.org/iel5/6946/18681/00862236.pdf

Direct extraction method for internal equivalent circuit

A signal amplifier includes a splitter for splitting an input signal into first and second signals, first and second bias control networks for generating a base bias signal for a Doherty amplifier in accordance with a power level of the input signal, a carrier amplifier for amplifying the first input signal, a peaking amplifier for amplifying the second input signal and a Doherty output network for combining the amplified signals. Through a simplified transformation of characteristic impedances in the Doherty output network, minimization of circuitry including the signal amplifier is obtained. Further, by controlling the Doherty amplifier in accordance with the power level of the input signal, both high efficiency and high linearity of the signal amplifier are achieved.

Bumman Kim

Papers

Highly efficient LDMOS power amplifier based on class‐E topology

High-efficiency Q-band GaAs FET oscillator

Mitigating Phase Variation of Peaking Amplifier Using Offset Line

Direct extraction method for internal equivalent circuit

Signal amplifier employing DOHERTY amplifier