Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

/pdf/fundamentals-of-modern-vlsi-devices-471xd7l9pf.pdf

Fundamentals of Modern VLSI Devices

This document provides updates to IEEE Std 802.16's MIB for the MAC, PHY and asso- ciated management procedures in order to accommodate recent extensions to the standard.

IEEE Standard for Local and Metropolitan Area Networks Part 16: Air Interface for Fixed Broadband Wireless Access Systems Draft Amendment: Management Information Base Extensions

Massive multiple-input multiple-output MIMO is one of themost promising technologies for the next generation of wirelesscommunication networks because it has the potential to providegame-changing improvements in spectral efficiency SE and energyefficiency EE. This monograph summarizes many years ofresearch insights in a clear and self-contained way and providesthe reader with the necessary knowledge and mathematical toolsto carry out independent research in this area. Starting froma rigorous definition of Massive MIMO, the monograph coversthe important aspects of channel estimation, SE, EE, hardwareefficiency HE, and various practical deployment considerations.From the beginning, a very general, yet tractable, canonical systemmodel with spatial channel correlation is introduced. This modelis used to realistically assess the SE and EE, and is later extendedto also include the impact of hardware impairments. Owing tothis rigorous modeling approach, a lot of classic "wisdom" aboutMassive MIMO, based on too simplistic system models, is shownto be questionable.

https://www.nowpublishers.com/article/DownloadSummary/SIG-093

Massive MIMO Networks: Spectral, Energy, and Hardware Efficiency

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

This paper presents an envelope-tracking power amplifier (ET PA) for handset applications with enhanced efficiency at a back-off power region. The supply modulator consists of a linear regulator and switching converter. The supply of the linear regulator is boosted to 5 V and that of the switching converter is directly connected to a battery, forming a power management IC. Since the supply voltages of the two amplifiers are asymmetric, the average switch current level is not properly adjusted by itself according to the envelope level. For the optimum operation over the entire power region, average switch current level is adjusted by detecting the input envelope level. For a 10-MHz long term evolution signal with a 6.5 dB peak-to-average power ratio, the proposed supply modulator delivers a peak voltage of 4.5 V to a 6.5 Ω load with a measured efficiency of 76.2 %. At an average output power of 27 dBm, the proposed ET PA delivers a power-added efficiency (PAE) of 40.7 %, which is 8.6 % higher than that of a standalone PA. In the back-off power region, the PAE is improved by up to 2.8 % and 10.7 % compared to the conventional ET PA and stand-alone PA, respectively.

Envelope-tracking power amplifier with enhanced back-off efficiency using average switch current control of supply modulator

Coupled-line filters (CLFs) with a 180deg phase shift are analyzed and coupling compensated design equations are derived. They can be applied for arbitrary termination impedances and arbitrary coupling coefficients. To verify the design equations reasonable, a microstrip CLF with a coupling coefficient of -7 dB is fabricated on a substrate (epsivr = 3.5 ,H = 30 mil, tan delta = 0.04) and tested for 100 Omega and 70 Omega termination impedances. The measured results show good agreement with the simulated ones.

Coupling-compensated 180° phase shift coupled-Line filters terminated in arbitrary impedances

This paper presents a circuit design technique, based on a CMOS charge-domain passive mixer, for WLAN applications in a 2.4 GHz band. The CMOS passive mixer is designed to mitigate the critical fli...

A Noise Optimized Passive Mixer for Charge-Domain Sampling Applications

The capacitance between the base and collector terminals of hetero-junction bipolar transistors (HBT) varies with an RF input signal, and degrades linearity and efficiency. A second harmonic control circuit and a feedback inductor between the base and collector terminals are employed to prevent the distortion of the signal, and improve the efficiency and the linearity. The PA circuit is realized in a 1.2 mm by 1.2 mm die using a 2 µm InGaP/GaAs HBT process. For a long term evolution (LTE) signal at a frequency of 2.535 GHz with a 7.42 dB crest factor, 16 QAM, and a 20 MHz bandwidth, the PA with a supply voltage of 4.5 V has an EVM of 2.78% and a PAE of 32.6% at an average output power of 26.9 dBm. The PA is operated in an envelope-tracking mode with a boosted supply modulator from 3.4 V to 4.5 V, and delivers a PAE of 34.2% at an average output power of 26.4 dBm, while meets the LTE spectrum mask.

LTE Power Amplifier for envelope tracking polar transmitters

A highly linear and efficient Doherty power amplifier (PA) for handset applications is presented. To improve the performances, we analyze the Doherty operation with respect to harmonic load conditions. The fundamental and harmonic loads are implemented using the output capacitor of the device and a lumped quarter-wave transformer. By using elaborate matching techniques, the size issue of a Doherty amplifier is overcome. The Doherty PA is implemented using an InGaP/GaAs heterojunction bipolar transistor and is tested at 1.9 GHz using a long-term evolution signal with 16-quadrature amplitude modulation, 7.5-dB peak-to-average power ratio, and 10-MHz bandwidth. The PA with a 3.4 V supply voltage delivers a power-added efficiency of 45.8% and an evolved universal terrestrial radio access adjacent channel leakage ratio (E — UTRAACLR) of −35 dBc at an average output power of 27.5 dBm.

Bumman Kim

Papers

Envelope-tracking power amplifier with enhanced back-off efficiency using average switch current control of supply modulator

Coupling-compensated 180° phase shift coupled-Line filters terminated in arbitrary impedances

A Noise Optimized Passive Mixer for Charge-Domain Sampling Applications

LTE Power Amplifier for envelope tracking polar transmitters

Compact design of linear Doherty power amplifier with harmonic control for handset applications