Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

/pdf/fundamentals-of-modern-vlsi-devices-471xd7l9pf.pdf

Fundamentals of Modern VLSI Devices

This document provides updates to IEEE Std 802.16's MIB for the MAC, PHY and asso- ciated management procedures in order to accommodate recent extensions to the standard.

IEEE Standard for Local and Metropolitan Area Networks Part 16: Air Interface for Fixed Broadband Wireless Access Systems Draft Amendment: Management Information Base Extensions

Massive multiple-input multiple-output MIMO is one of themost promising technologies for the next generation of wirelesscommunication networks because it has the potential to providegame-changing improvements in spectral efficiency SE and energyefficiency EE. This monograph summarizes many years ofresearch insights in a clear and self-contained way and providesthe reader with the necessary knowledge and mathematical toolsto carry out independent research in this area. Starting froma rigorous definition of Massive MIMO, the monograph coversthe important aspects of channel estimation, SE, EE, hardwareefficiency HE, and various practical deployment considerations.From the beginning, a very general, yet tractable, canonical systemmodel with spatial channel correlation is introduced. This modelis used to realistically assess the SE and EE, and is later extendedto also include the impact of hardware impairments. Owing tothis rigorous modeling approach, a lot of classic "wisdom" aboutMassive MIMO, based on too simplistic system models, is shownto be questionable.

https://www.nowpublishers.com/article/DownloadSummary/SIG-093

Massive MIMO Networks: Spectral, Energy, and Hardware Efficiency

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

This paper describes a passive mixer-first receiver front-end (RFE) for mobile TV covering 100MHz to 800MHz without any external components. The proposed input matching technique with RC discharging circuit achieves a simple topology with a low noise. The out-of-band linearity is enhanced using the low pass filtering of sampling capacitor, delivering an outstanding out-of-band linearity. The out-of-band IIP3 and IIP2 are 7dBm and 36dBm, respectively at the maximum gain setting of 36dB. The third and fifth harmonic rejection ratios (HRR) are 49dB and 42dB, respectively. The power consumption is 23mW and the maximum NF is 3.6dB. The active area occupies 0.33mm2 in 65nm CMOS technology.

A passive mixer-first receiver front-end without external components for mobile TV applications

An optimized peaking amplifier for proper operation of a Doherty amplifier is investigated. The peaking amplifier operates at a class-C bias and has a lower maximum output power than that of the carrier amplifier. Because of the low output power of the peaking amplifier, the load modulation of the Doherty network cannot be properly carried out. To solve the problem, an inductive second harmonic load is employed at the input. The conduction angle of the input voltage waveform is enlarged due to the out-of-phased second harmonic, restoring the decreased conduction angle and output power. In addition, the peaking amplifier turns on at a higher input power and the first peak efficiency of the Doherty amplifier is enhanced. Based on the concept of the inductive input harmonic load of the peaking amplifier, a Doherty amplifier is implemented with the GaN pHEMT MMIC process at 2.14 GHz and demonstrated the expected good performance.

Optimized peaking amplifier of Doherty amplifier using an inductive input second harmonic load

The performance of a power MESFET has been significantly improved by using an AlGaAs heterobuffer. The conduction-band discontinuity at the heterointerface acts as a potential barrier for electron confinement; the RF conversion efficiency and power gain of the FET were very high compared with a standard MESFET. We have achieved 41% power-added efficiency with 0.88 W/mm power density at 21.5 GHz and 30% efficiency with 0.56 W/mm at 35 GHz.

High-performance GaAs power MESFET with AlGaAs buffer layer

The practical operating conditions of class-F−1 amplifier are investigated by analyzing the current and voltage waveform shapings. The bifurcated current of the amplifier is generated by the saturated operation at the knee region, resulting in quasi-rectangular current. The voltage shaping is studied for the active device with linear and nonlinear output capacitors (C out s). In the linear C out case, the half-sinusoidal voltage can be formed only at deeply saturated region, in which the proper second harmonic current is generated. The second harmonic voltage can be built using a large second harmonic load. When the nonlinear C out is included, the harmonic load-pull simulation results show that the half-sinusoidal voltage is formed by the second harmonic generation of C out rather than by the second harmonic current. This waveform shaping process is quite different from that of the conventional class-F−1 PA, and we call the amplifier with the nonlinear C out as the saturated amplifier. This saturated amplifier delivers better power performance than that of the amplifier with linear C out since the former one can better shape the current and voltage waveforms. In the experiment, the saturated amplifier is designed and implemented using Cree GaN HEMT CGH40010 at 2.655 GHz. It provides a power-added efficiency of 73.9% at saturated output power of 41 dBm.

http://ieeexplore.ieee.org/iel5/6089237/6102757/06102888.pdf

Investigation of a class-F −1 power amplifier with a nonlinear output capacitor

The Kirk effect in GaAs BJTs has been compared with that of Si BJTs using a PISCES-IIB simulator. The simulation results have shown that, due to the high electron mobility and velocity overshoot effect of GaAs, the Kirk current density of GaAs BJTs is about two times larger than that of comparable Si BJTs. It is shown that the saturation velocity model of the Kirk effect is very accurate for Si BJTs, but not for GaAs BJTs. A modified structure GaAs BJT with n + − n − collector layer, which is generally believed to have a higher Kirk current, was also studied. We have found for that case that a retarding field is formed at the n + − n − interface and that the Kirk current does not increase at all.

Bumman Kim

Papers

A passive mixer-first receiver front-end without external components for mobile TV applications

Optimized peaking amplifier of Doherty amplifier using an inductive input second harmonic load

High-performance GaAs power MESFET with AlGaAs buffer layer

Investigation of a class-F −1 power amplifier with a nonlinear output capacitor

A comparative study of the Kirk effect in GaAs and Si bipolar junction transistors