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Bumman Kim

Researcher at Pohang University of Science and Technology

Publications -  395
Citations -  10494

Bumman Kim is an academic researcher from Pohang University of Science and Technology. The author has contributed to research in topics: Amplifier & RF power amplifier. The author has an hindex of 54, co-authored 395 publications receiving 9960 citations. Previous affiliations of Bumman Kim include Texas Instruments & Carnegie Mellon University.

Papers
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Journal ArticleDOI

Analog Predistortion High Power Amplifier Using Novel Low Memory Matching Topology

TL;DR: This paper represents an analog predistortion linearizer for the high power amplifier with low memory effect, which comprises the fundamental path and the cuber and quintic generating circuits, whose amplitudes and phases can be controlled independently.
Patent

Resonating apparatus in a dielectric substrate

TL;DR: In this article, a dielectric resonator is coupled with a microstrip line, which is arranged in the fluid substrate membrane so that it can be coupled with the resonator to reduce the conductivity loss by lengthening the distance between the supporting substrate in the higher layer and the microstrip lines in the lower layer.
Journal ArticleDOI

Equivalent Transmission-Line Sections for Very High Impedances and Their Application to Branch-Line Hybrids with Very Weak Coupling Power

TL;DR: In this paper, an equivalent high impedance transmission-line section is suggested, which consists mainly of a pair of coupled-line sections with two shorts and two identical open stubs are added and conventional design equations of even and odd-mode impedances are modified based on the fact that the modified design equations have the linear combinations of conventional ones.
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Analysis of Far-Out Spurious Noise and its Reduction in Envelope-Tracking Power Amplifier

TL;DR: In this paper, an envelope-tracking power amplifier (ET PA) was proposed to reduce the far-out spurious emission domain of a 10-MHz bandwidth and 6.5-dB peak-to-average power ratio long term evolution signal.
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1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with a noise corner frequency below 1 kHz

TL;DR: In this paper, the existence of resistance fluctuation 1/f noise was verified by a simple comparison of collector current noise spectra with different base terminations, and it was found that, at a high emitter-base forward bias, the resistance fluctuations became dominant for shorted base-emitter termination, but the internal 1 /f noise dominant for open base.