Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

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Fundamentals of Modern VLSI Devices

This document provides updates to IEEE Std 802.16's MIB for the MAC, PHY and asso- ciated management procedures in order to accommodate recent extensions to the standard.

IEEE Standard for Local and Metropolitan Area Networks Part 16: Air Interface for Fixed Broadband Wireless Access Systems Draft Amendment: Management Information Base Extensions

Massive multiple-input multiple-output MIMO is one of themost promising technologies for the next generation of wirelesscommunication networks because it has the potential to providegame-changing improvements in spectral efficiency SE and energyefficiency EE. This monograph summarizes many years ofresearch insights in a clear and self-contained way and providesthe reader with the necessary knowledge and mathematical toolsto carry out independent research in this area. Starting froma rigorous definition of Massive MIMO, the monograph coversthe important aspects of channel estimation, SE, EE, hardwareefficiency HE, and various practical deployment considerations.From the beginning, a very general, yet tractable, canonical systemmodel with spatial channel correlation is introduced. This modelis used to realistically assess the SE and EE, and is later extendedto also include the impact of hardware impairments. Owing tothis rigorous modeling approach, a lot of classic "wisdom" aboutMassive MIMO, based on too simplistic system models, is shownto be questionable.

https://www.nowpublishers.com/article/DownloadSummary/SIG-093

Massive MIMO Networks: Spectral, Energy, and Hardware Efficiency

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

This chapter introduces the basic concepts and methodologies in power amplifier designs. It starts with the small-signal conjugate matching widely used in conventional small-signal amplifiers and then presents the large-signal power (load-line) matching that is often required in power amplifier designs to maximize the power generation capability of a given transistor. It also covers the concepts of power gain, power efficiency, load-line plot, and load-pull plot. Then, classic linear power amplifier topologies, i.e., the class-A, -B, -AB, and -C power amplifiers, are introduced, which are classified based on their conduction angles. In particular, the nonlinear behaviors in linear power amplifier designs are discussed in detail. Next, classic switching power amplifier topologies are presented, including the class-F, F -1 , D, and D -1 , and AB/F topologies, whose theoretical drain efficiencies can achieve 100%. This chapter concludes with the class-E switching power amplifier topology, design equations, and its operation.

Power amplifier fundamentals

A MMIC PA with continuous bias Control circuit for cellular handsets has been implemented. It has been shown that power amplifier with continuous bias control circuit can increase the standby and talk time by lowering the average current consumption. The average current of the continuous bias control is 37.9mA in urban and 59.2mA in suburban CDMA environment, which is reduced by 45.9% and 60.6%,respectively compared to normal operation (no bias control). The ACPR is below 47.3dBc, and the PAE is about 42.3% in both operations.

The Handset Power Amplifier using Continuous Bias Control

An accurate Gummel plot model of HBT at a wide range of current level and temperatures has been established. The model contains a bias- and temperature-dependent parasitic resistance and temperature-dependent temperature coefficient of base–emitter turn-on voltage. The average error between the measurement data and calculated results was below 4% at 300–450 K, indicating that this model is useful for the optimum thermal design of high-power HBTs. © 1997 John Wiley & Sons, Inc. Microwave Opt Technol Lett 16: 38–41, 1997.

A highly accurate Gummel plot model for thermal design of high‐power microwave HBTs

This paper reports on the design procedure and mesurement results of a Ka-band MMIC VCO utilizing a 0.15 um T-gate GaAs P-HEMT technology. A balanced buffer amplifier is also developed for assurance of output power higher than 10 dBm. The VCO with center frequency of 35 GHz exhibits a tuning range of up to 3 GHz and typical output power of 10 dBm at 35 GHz without the amplifier. The best measured phase noise at 1MHz offset is - 106 dBc/Hz. The buffer amplifier exhibits a typical gain of 5.9 dB with 15dBm output power. A lange coupler is used for a good matching between the VCO and amplifier.

Monolithic Ka-band VCO with wide tuning range

Based on the concept that a left-handed transmission line section has a negative electrical length, two Π -type lumped-element circuits are presented as equivalent circuits, and it is newly suggested that a lowpass filter type can also be its lumped-equivalent circuit under a certain condition. Applying the negative electrical length concept to Smith chart, LHCCTs (left-handed constant conductance impedance transformers) are derived and two are validated by measurements, adding 180o righthanded transmission lines to LHCCTs. The measured results show good agreement with predictions. As an application of the LHCCTs, impedance-transforming lumped baluns are suggested for arbitray phase differences between two outputs and simulated for a 40Ω-50Ω impedance transforming and 120˚ phase difference.

Bumman Kim

Papers

Power amplifier fundamentals

The Handset Power Amplifier using Continuous Bias Control

A highly accurate Gummel plot model for thermal design of high‐power microwave HBTs

Monolithic Ka-band VCO with wide tuning range

Impedance-Transforming Lumped-Baluns Consisting of Left-Handed Small Impedance Transformers