Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

/pdf/fundamentals-of-modern-vlsi-devices-471xd7l9pf.pdf

Fundamentals of Modern VLSI Devices

This document provides updates to IEEE Std 802.16's MIB for the MAC, PHY and asso- ciated management procedures in order to accommodate recent extensions to the standard.

IEEE Standard for Local and Metropolitan Area Networks Part 16: Air Interface for Fixed Broadband Wireless Access Systems Draft Amendment: Management Information Base Extensions

Massive multiple-input multiple-output MIMO is one of themost promising technologies for the next generation of wirelesscommunication networks because it has the potential to providegame-changing improvements in spectral efficiency SE and energyefficiency EE. This monograph summarizes many years ofresearch insights in a clear and self-contained way and providesthe reader with the necessary knowledge and mathematical toolsto carry out independent research in this area. Starting froma rigorous definition of Massive MIMO, the monograph coversthe important aspects of channel estimation, SE, EE, hardwareefficiency HE, and various practical deployment considerations.From the beginning, a very general, yet tractable, canonical systemmodel with spatial channel correlation is introduced. This modelis used to realistically assess the SE and EE, and is later extendedto also include the impact of hardware impairments. Owing tothis rigorous modeling approach, a lot of classic "wisdom" aboutMassive MIMO, based on too simplistic system models, is shownto be questionable.

https://www.nowpublishers.com/article/DownloadSummary/SIG-093

Massive MIMO Networks: Spectral, Energy, and Hardware Efficiency

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

Summary form only given. The handset PAs for advanced system, such as 4G and beyond, should handle signals with high PAPR. For amplification of the signals, efficiency of the PAs is degraded significantly due to the operation at a low power region. For the system application point, the PAs are required to have a multimode and multiband capability, also. These stringent requirements ask advanced design architectures of the PAs. These architectures are based on a highly efficient amplifier and try to maintain the high efficiency at a low power level. The representative architectures are ET technique, Doherty amplifier, class-S amplifier, LINC and some digital PAs. ET is the most popular architecture for the handset application since the ET PA is very flexible, suitable to the multimode and multiband operation, together with high efficiency. This technique can be applied easily to a low-high mode PA, also. One variation of the technique is an average power tracking (APT) amplifier, controlling VDC according to the average power level at a slow speed using a buck DC-DC converter. This PA is on the market, now. Doherty can provide a high efficiency for the application and there is a significant progress for the broad banding but the bandwidth is still limited. Recently, the performance of the LINC PA is improved significantly by increasing the power combining efficiency. The distortion is cancelled using DPD technique. The progress in LINC is mainly focused on the infrastructure application but it can be employed for handset PA also. As transistors are scaled down with higher speed, the digitally configured circuit can be applied for the RF signal amplification. The digital circuit is very flexible and can be used for multimode/multiband application but the performance is not up to the expectation, yet. For the digital amplification, the I-Q modulated signal is, normally, up-converted to a polar signal. The amplitude information is digitized at the base band speed or the RF frequency and is applied to the digital circuit. The digital bit signal can be amplified by the thermo coded cells, forming a digital amplifier. The digitizing can be done using sigma-delta modulator and the digitized bit can be applied to a PA, either as an input or as a bias voltage. The resulting amplifier is a class-S PA. The I-Q modulated signal can be directly up-converted while maintaining the digital bits using sampling technique and is applied to the thermo code cells. These digitally configured PAs are actively studied now and will progress continuous. These various advanced architectures for the next generation PA for handset application will be introduced in this talk.

Advanced linear PA architectures for handset applications

A wideband LNA is the first amplifying stage in TV tuner system. It requires a low noise figure with a sufficient gain and a high linearity such as high IIP2 and IIP3 due to the many adjacent channels. This paper represents the wideband CMOS LNA using a dual feedback for the tuner application, which can suppress the second and the third order distortions with a low noise and a suitable gain. In the dual feedback, the weak negative feedback improves the linearity of the transconductance partially, thereby maintaining the high gain and low noise. The residual distortion and the distortion of the buffer are cancelled by the positive feedback. Consequently, the proposed wideband LNA with the dual feedback improves noise figure and linearity with a high gain. The LNA fabricated in 0.18 µm RF CMOS demonstrates the expected performances.

A wideband LNA with dual-feedback for TV tuner

We design a broadband power amplifier (PA) for a base-station in a wireless communication system. This PA covers ultra-wide band including most of the mobile operation frequencies. To achieve the broadband operation, we adopt a saturated PA topology. The saturated PA has simple input and output matching networks because only the fundamental impedance needs to be controlled actually. The internal output nonlinear capacitance generates appropriate amounts of the 2nd and 3rd harmonic voltage components and does not need any complicated matching networks for the harmonic impedance matching. We simulate the optimum load and source impedances for the target frequency bands and match the fundamental impedances in the target impedance area. For operating frequency from 0.9 GHz to 3.6 GHz, output power is varied from 39.5 dBm to 43.4 dBm, drain efficiency from 48% to 66.7% and the gain is 9.5~13.4 dB. Although this PA covers a very wide range of frequencies, it can provide high efficiency using simple matching networks.

GaN MMIC broadband saturated power amplifier

The efficiency and linearity are enhanced by a direct input dividing and an uneven power drive. An optimized envelope tracking (ET) operation of Doherty power amplifier (PA) is presented. The PA and the supply modulator are realized using a 2 μm InGaP/GaAs HBT and 0.13 μm CMOS processes, respectively. For WiMAX application, it shows a PAE of 38.6% and an EVM of 3.64% at an output power of 24.22 dBm with a gain of 24.62 dB.

Doherty power amplifiers for handset applications

We have developed a novel digital feedback predistortion(DFBPD) linearization based on RF feedback PD for the wide bandwidth modulated signals. The wideband PD operation is carried out by combining the DFBPD and memory lookup table(LUT). To experimentally demonstrate the linearization performance of the proposed PD technique for wideband signal, a class-AB amplifier using an LDMOSFET MRF6S23140 with 140-W peak envelope power is employed at 2.345 ㎓. For a forward-link 2FA wideband code-division multiple-access signal with 10 ㎒ carrier spacing, the proposed DFBPD with memory LUT delivers the adjacent channel leakage ratio at an 10 ㎒ offset of ?56.8 ㏈c, while those of the amplifier with and without DFBPD are ?43.2 ㏈c and ?41.9 ㏈c, respectively, at an average output power of 40 ㏈m. The experimental result shows that the new DFBPD with memory LUT provides a good linearization performance for the signal with wide bandwidth.

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Bumman Kim

Papers

Advanced linear PA architectures for handset applications

A wideband LNA with dual-feedback for TV tuner

GaN MMIC broadband saturated power amplifier

Doherty power amplifiers for handset applications

A Novel Digital Feedback Predistortion Technique with Memory Lookup Table