Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

/pdf/fundamentals-of-modern-vlsi-devices-471xd7l9pf.pdf

Fundamentals of Modern VLSI Devices

This document provides updates to IEEE Std 802.16's MIB for the MAC, PHY and asso- ciated management procedures in order to accommodate recent extensions to the standard.

IEEE Standard for Local and Metropolitan Area Networks Part 16: Air Interface for Fixed Broadband Wireless Access Systems Draft Amendment: Management Information Base Extensions

Massive multiple-input multiple-output MIMO is one of themost promising technologies for the next generation of wirelesscommunication networks because it has the potential to providegame-changing improvements in spectral efficiency SE and energyefficiency EE. This monograph summarizes many years ofresearch insights in a clear and self-contained way and providesthe reader with the necessary knowledge and mathematical toolsto carry out independent research in this area. Starting froma rigorous definition of Massive MIMO, the monograph coversthe important aspects of channel estimation, SE, EE, hardwareefficiency HE, and various practical deployment considerations.From the beginning, a very general, yet tractable, canonical systemmodel with spatial channel correlation is introduced. This modelis used to realistically assess the SE and EE, and is later extendedto also include the impact of hardware impairments. Owing tothis rigorous modeling approach, a lot of classic "wisdom" aboutMassive MIMO, based on too simplistic system models, is shownto be questionable.

https://www.nowpublishers.com/article/DownloadSummary/SIG-093

Massive MIMO Networks: Spectral, Energy, and Hardware Efficiency

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

This paper presents a 2.4-GHz ISM band ultralow-power receiver with a passive sliding-IF (SIF) mixer structure. A self-biased inverter-based low noise amplifier which has high FOM and good linearity in low-power operation is employed. All passive SIF mixer is proposed to avoid power consumption in an active mixer and high-frequency operation of a nonoverlapping 4-phase generator. The passive SIF mixer is analyzed for optimization and interstage matching. A dual mode programmable gain amplifier (PGA) based on Sallen-key low-pass filter is proposed to enhance gain control range. The proposed PGA has 55 dB gain range with power consumption of 120 $\mu \text{W}$ . The overall receiver has 15–70-dB gain, 6.5-dB noise figure, −10-dBm IIP3 (at 3-MHz tone spacing), and consumes $640~\mu \text{W}$ at 2.45-GHz input frequency.

Ultralow-Power 2.4-GHz Receiver With All Passive Sliding-IF Mixer

A power amplifier (PA) for a femto-cell base station should be highly efficient, linear and small. The efficiency for amplification of a high peak-to-average power ratio (PAPR) signal is improved by designing an asymmetric Doherty PA (DPA). The linearity is improved by applying third-order inter-modulation (IM3) cancellation method. For dual-band operation, a tunable switched capacitor is applied. A small size is achieved by designing the DPA using GaN MMIC process. The implemented dual-band DPA delivers a DE of 45.5/41.6%, ACLR of −35.6/−34.5 dBc, and a gain of 15.7/13.2 dB with an average output power of 35.3/33.7 dBm, respectively, for a 7.2 dB PAPR 10 MHz bandwidth LTE signal at 2.3 and 2.65 GHz.

A highly linear dual-band Doherty power amplifier for femto-cell base stations

We have proposed a novel design of the Doherty power amplifier (PA) to improve the efficiency at a back-off output power level. It is shown that the carrier PA having 100 Ω load impedance is not an optimum for maximizing the efficiency at the back-off level due to the knee voltage effect. Thus, we introduce a Doherty PA having a load impedance larger than 100 Ω when the peaking PA is turned off. For experimental demonstration, we have implemented and tested the Doherty PA using Cree GaN HEMT CGH40045 devices at 2.655 GHz. The measured results clearly show that the proposed Doherty PA delivers better efficiency at the back-off output power level than the conventional PA due to the better load condition for improving efficiency.

A highly efficient Doherty power amplifier employing optimized carrier cell

Si-delta-doped Al/sub 0.25/Ga/sub 0.75/As/In/sub x/Ga/sub 1-x/As (x=0.15-0.28) P-HEMT's, prepared by LP-MOCVD, are investigated. The large conduction band discontinuity leads to 2-DEG density as high as 2.1/spl times/10/sup 12//cm/sup 2/ with an electron mobility of 7300 cm/sup 2//V/spl middot/s at 300 K. The P-HEMT's with 0.7/spl times/60 /spl mu/m gate have a maximum extrinsic transconductance of 380 mS/mm, and a maximum current density of 300 mA/mm. The S-parameter measurements indicate that the current gain and power gain cutoff frequencies are 30 and 61 GHz, respectively, The RF noise characteristics exhibit a minimum noise figure of 1.2 dB with an associated gain of 10 dB at 10 GHz. Due to the efficient doping technique, the electron mobility and transconductance obtained are among the best reported for MOCVD grown P-HEMT's with the similar structure.

DC and RF performance of LP-MOCVD grown Al/sub 0.25/Ga/sub 0.75/As/In/sub x/Ga/sub 1-x/As (x=0.15-0.28) P-HEMT's with Si-delta doped GaAs layer

Disclosed are in-vivo interstitial antennas (IVIAs) for thermal treatment and deactivation of tumors by means of microwaves. An IVIA comprises a microwave monopole antenna (MMA) and a medical catheter, and the MMA is inserted into the medical catheter to form the IVIA. The MMA comprises coaxial cable and three types of capacitors. The coaxial cable consists of first and second conductors and a first insulator, and only the first conductor extends less than a quarter wavelength. The first capacitor is located around the end of the extended first conductor and includes the second insulator and the third conductor. The second and third capacitors are located between the first capacitor and the apertures of the MMAs and have about same function. Because of arbitrarily changed input impedance of the first capacitor, almost perfect matching can be achieved and desirable temperature distributions can be obtained due to the second and third capacitors.

Bumman Kim

Papers

Ultralow-Power 2.4-GHz Receiver With All Passive Sliding-IF Mixer

A highly linear dual-band Doherty power amplifier for femto-cell base stations

A highly efficient Doherty power amplifier employing optimized carrier cell

DC and RF performance of LP-MOCVD grown Al/sub 0.25/Ga/sub 0.75/As/In/sub x/Ga/sub 1-x/As (x=0.15-0.28) P-HEMT's with Si-delta doped GaAs layer

In-vivo interstitial antennas