Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

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Fundamentals of Modern VLSI Devices

This document provides updates to IEEE Std 802.16's MIB for the MAC, PHY and asso- ciated management procedures in order to accommodate recent extensions to the standard.

IEEE Standard for Local and Metropolitan Area Networks Part 16: Air Interface for Fixed Broadband Wireless Access Systems Draft Amendment: Management Information Base Extensions

Massive multiple-input multiple-output MIMO is one of themost promising technologies for the next generation of wirelesscommunication networks because it has the potential to providegame-changing improvements in spectral efficiency SE and energyefficiency EE. This monograph summarizes many years ofresearch insights in a clear and self-contained way and providesthe reader with the necessary knowledge and mathematical toolsto carry out independent research in this area. Starting froma rigorous definition of Massive MIMO, the monograph coversthe important aspects of channel estimation, SE, EE, hardwareefficiency HE, and various practical deployment considerations.From the beginning, a very general, yet tractable, canonical systemmodel with spatial channel correlation is introduced. This modelis used to realistically assess the SE and EE, and is later extendedto also include the impact of hardware impairments. Owing tothis rigorous modeling approach, a lot of classic "wisdom" aboutMassive MIMO, based on too simplistic system models, is shownto be questionable.

https://www.nowpublishers.com/article/DownloadSummary/SIG-093

Massive MIMO Networks: Spectral, Energy, and Hardware Efficiency

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

This paper presents a highly efficient linear power amplifier with an adaptive bias control circuit. In the amplifier, two amplifiers are power-combined using load modulation networks and then gate biases are controlled according to the input signal envelope. The gate voltage shapes of the two amplifiers have been optimized by envelope simulation to maximize the power added efficiency for the ACLR of -30 dBc. For verification, an adaptively controlled power amplifier has been implemented at 2.14 GHz using 4 watts PEP LDMOSFET's and its bias circuit were constructed based on simulated control shapes. The performances of the amplifier were compared with the class AB and Doherty amplifiers using a one-tone and forward-link WCDMA signals. The measured PAE of the amplifier is 41 % at -30 dBc ACLR, while those of the class AB and Doherty amplifiers are 24.5 % and 28.1 %, respectively.

An adaptive bias controlled power amplifier with a load-modulated combining scheme for high efficiency and linearity

A multimode/multiband envelope tracking (ET) transmitter consisting of a hybrid switching amplifier (HSA) and a broadband saturated power amplifier (PA) is developed for operation across 1.3 to 2.7 GHz. For the various standard signals with different bandwidth (BW) and peak-to-average power ratio, the HSA efficiently provides supply signals to the PA by changing the reference value of the hysteresis comparator. The saturated amplifier employs the nonlinear output capacitor to shape the voltage waveform, resulting in the half-sinusoidal or rectangular waveform. Since the nonlinear capacitor generates large out-of-phased second harmonic component with small higher order harmonics, the voltage shaping is mainly carried out by the capacitor and slightly supported by the harmonic loading circuit. Thus, with the harmonic load higher than that of output capacitor, the saturated amplifier can operate with high efficiency. This characteristic enables the saturated PA to operate with broadband characteristic and high efficiency because the design is mainly focused on the fundamental matching problem while the harmonics can be easily kept out of a low efficiency region through the subsequent optimization of the matching circuit. The broadband saturated PA is implemented based on load/source-pull methodology. The broadband matching networks for the high efficiency are synthesized using the simplified real frequency technique. For the BW from 1.3 to 2.7 GHz (70% fractional BW), the measured output power, drain efficiency, and power-added efficiency (PAE) performances are between 39.8-42.0 dBm, 55.8-69.7%, and 51.2-65.3%, respectively. The multimode/multiband ET transmitter with the designed broadband saturated PA is demonstrated at 1.8425-GHz long-term evolution (LTE), 2.14-GHz wideband code division multiple access (WCDMA), and 2.6-GHz mobile world wide interoperability for microwave access (m-WiMAX) applications. This transmitter delivers a PAE of 32.16, 37.24, and 28.75% for LTE, WCDMA, and m-WiMAX applications.

A Multimode/Multiband Envelope Tracking Transmitter With Broadband Saturated Amplifier

The linear and efficient power amplification can be achieved with LINC (linear amplification with nonlinear components) amplifiers because RF power amplifiers deal with constant envelope signals in LINC systems. To increase the average efficiency in some modulation schemes with high peak to average ratio, reactance termination in combining circuit is used. However, the shunt reactance termination degrades the linearity performance of LINC. This work shows the effect of efficiency optimization with reactance termination on ACLR (Adjacent Channel Leakage Ratio) of LINC amplifiers with WCDMA modulation systems using envelope simulation.

Effect of efficiency optimization on linearity of LINC amplifiers with CDMA signal

We have investigated the microwave Doherty amplifier, testing for efficiency and linearity. For the experiment, a 1.4 GHz Doherty amplifier has been implemented using a silicon LDMOSFET. The Doherty amplifier-I (a combination of a class B carrier amplifier and a class C peaking amplifier) and the Doherty amplifier-II (a combination of a class AB carrier amplifier and a class C peaking amplifier) have been compared with class B and AB amplifiers, respectively, using single-tone, two-tone, and forward-link CDMA signals. It demonstrated the superior performance of Doherty amplifiers. The results provide a topology selection guide of the CDMA base station power amplifier to achieve both linearity and efficiency enhancements.

Experimental investigation on efficiency and linearity of microwave Doherty amplifier

We propose a new empirical large-signal model of silicon laterally diffused MOSFETs for the design of various modes of high-power amplifiers. The new channel current model has only nine parameters that represent the unique operation principles of a MOSFET. In the channel current model, we include the thermal phenomena of high-power devices. To accurately characterize high-power devices, we incorporate the channel heating and heat-sink heating effects by providing two thermal capacitances and two thermal resistances. Nonlinear capacitances, including deep subthreshold and triode regions, as well as normal saturation regions, are extracted and modeled. For validation of our model, a 1.4-GHz 5-W amplifier is implemented, and the measured and simulated results match very well.

Bumman Kim

Papers

An adaptive bias controlled power amplifier with a load-modulated combining scheme for high efficiency and linearity

A Multimode/Multiband Envelope Tracking Transmitter With Broadband Saturated Amplifier

Effect of efficiency optimization on linearity of LINC amplifiers with CDMA signal

Experimental investigation on efficiency and linearity of microwave Doherty amplifier

A new empirical large-signal model of Si LDMOSFETs for high-power amplifier design