Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

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Fundamentals of Modern VLSI Devices

This document provides updates to IEEE Std 802.16's MIB for the MAC, PHY and asso- ciated management procedures in order to accommodate recent extensions to the standard.

IEEE Standard for Local and Metropolitan Area Networks Part 16: Air Interface for Fixed Broadband Wireless Access Systems Draft Amendment: Management Information Base Extensions

Massive multiple-input multiple-output MIMO is one of themost promising technologies for the next generation of wirelesscommunication networks because it has the potential to providegame-changing improvements in spectral efficiency SE and energyefficiency EE. This monograph summarizes many years ofresearch insights in a clear and self-contained way and providesthe reader with the necessary knowledge and mathematical toolsto carry out independent research in this area. Starting froma rigorous definition of Massive MIMO, the monograph coversthe important aspects of channel estimation, SE, EE, hardwareefficiency HE, and various practical deployment considerations.From the beginning, a very general, yet tractable, canonical systemmodel with spatial channel correlation is introduced. This modelis used to realistically assess the SE and EE, and is later extendedto also include the impact of hardware impairments. Owing tothis rigorous modeling approach, a lot of classic "wisdom" aboutMassive MIMO, based on too simplistic system models, is shownto be questionable.

https://www.nowpublishers.com/article/DownloadSummary/SIG-093

Massive MIMO Networks: Spectral, Energy, and Hardware Efficiency

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

The CMOS power amplifier (PA) is a promising solution for highly-integrated transmitters in a single chip. However, the implementation of PAs using the CMOS process is a major challenge because of the inferior characteristics of CMOS devices. This paper focuses on improvements to the efficiency and linearity of CMOS PAs for modern wireless communication systems incorporating high peak-toaverage ratio signals. Additionally, an envelope tracking supply modulator is applied to the CMOS PA for further performance improvement. The first approach is enhancing the efficiency by waveform engineering. In the second approach, linearization using adaptive bias circuit and harmonic control for wideband signals is performed. In the third approach, a CMOS PA with dynamic auxiliary circuits is employed in an optimized envelope tracking (ET) operation. Using the proposed techniques, a fully integrated CMOS ET PA achieves competitive performance, suitable for employment in a real system.

Design of an Advanced CMOS Power Amplifier

In0.17Ga0.83As MESFETs were grown on GaAs(100) substrates by molecular beam epitaxy (MBE). The structure comprised an undoped, In0.17Ga0.83As buffer layer grown directly on GaAs and an In0.17 Ga0.83As active layer doped to 5 × 10 + 17 cm−3. The defect structure was characterized by cathodoluminescence (CL) in a scanning electron microscope. FETs with 0.25-μm gate length and 50-μm gate width were fabricated using a standard processing technique. Excellent dc and microwave performance characteristics were obtained. The best device showed a transconductance (gm) of 400 mS / mm and a current-gain cutoff frequency (fT) of 75 GHz. At 60 GHz, it delivered a power density of 0.50 W / mm with a gain of 4 dB and a power-added efficiency of 20%, indicating its superior performance over a standard AIGaAs / GaAs HEMT.

Millimeter-wave in0.17Ga0.83 as power mesfets on GaAs(100) substrates

This paper demonstrates a highly efficient 3-stage Doherty power amplifier (PA) employing an envelope tracking (ET) technique. The ‘3-stage’ Doherty PA is the most efficient architecture for a high peak-to-average power ratio (PAPR) signal among the various Doherty PAs. However, because of the lower peaking biases than those of the ‘N-way’ Doherty PA, the proper load modulation is hard to be achieved. To get proper modulation, the peaking PAs' gate biases have been adaptively controlled using the ET technique, and the peak power and maximum efficiency characteristic along the backed-off output power region is successfully achieved. By ADS and Matlab simulations, the overall behavior of the 3-stage Doherty PA employing the ET technique has been fully analyzed. To maximize the overall efficiency of the proposed 3-stage Doherty PA, the unit PA has been designed using class F−1 PA. For verification, the amplifier is implemented using 5 W and 10 W PEP LDMOSFETs for the 802.16e mobile world interoperability for microwave access (WiMAX) at 1 GHz with a 8.5 dB PAPR. The measured drain efficiency of the proposed 3-stage Doherty PA is 55.5% at an average output power of 37 dBm, which is a 7.54 dB backed-off output power. The digital feedback predistortion (DFBPD) algorithm has been used to linearize the proposed PA considering the ET technique. After linearization, the −33.15 dB of relative constellation error (RCE) performance is achieved, satisfying the system specification. These results show that the 3-stage Doherty employing the ET technique and saturated PA is the most suitable PA for the highly efficient and linear transmitter.

Highly efficient 3-stage Doherty power amplifier using gate bias adaption

Envelope tracking technique is suitable to the transmitters for mobile handset and becomes a hot research item in recent years. In this paper, we will overview the research trends in this area. The supply modulator handles the modulated signal and the PA works only for RF amplification. Because of the separated functions, the architecture is a favored structure for multimode/multiband operation. The supply modulator is an ideal power management IC for a PA. This technique is perused to improve the efficiency at a high power level as well as at a low power level. Because of the enhanced efficiency at a low power level, the transmitter can provide good performance at a low/high mode PA for handset. These new developments of the ET technology will be introduced.

Envelope tracking technique for mobile handset application (Inviter Paper)

A state-of-the-art GaAs power MESFET prepared by gas source molecular beam epitaxy is described. The device showed DC transconductance of 180mS/mm and generated power density of 0–6W/mm at 35 GHz, with 5dB gain and 28% power-added efficiency.

Bumman Kim

Papers

Design of an Advanced CMOS Power Amplifier

Millimeter-wave in0.17Ga0.83 as power mesfets on GaAs(100) substrates

Highly efficient 3-stage Doherty power amplifier using gate bias adaption

Envelope tracking technique for mobile handset application (Inviter Paper)

High-performance millimetre-wave GaAs power MESFET prepared by gas source molecular beam epitaxy