Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

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Fundamentals of Modern VLSI Devices

This document provides updates to IEEE Std 802.16's MIB for the MAC, PHY and asso- ciated management procedures in order to accommodate recent extensions to the standard.

IEEE Standard for Local and Metropolitan Area Networks Part 16: Air Interface for Fixed Broadband Wireless Access Systems Draft Amendment: Management Information Base Extensions

Massive multiple-input multiple-output MIMO is one of themost promising technologies for the next generation of wirelesscommunication networks because it has the potential to providegame-changing improvements in spectral efficiency SE and energyefficiency EE. This monograph summarizes many years ofresearch insights in a clear and self-contained way and providesthe reader with the necessary knowledge and mathematical toolsto carry out independent research in this area. Starting froma rigorous definition of Massive MIMO, the monograph coversthe important aspects of channel estimation, SE, EE, hardwareefficiency HE, and various practical deployment considerations.From the beginning, a very general, yet tractable, canonical systemmodel with spatial channel correlation is introduced. This modelis used to realistically assess the SE and EE, and is later extendedto also include the impact of hardware impairments. Owing tothis rigorous modeling approach, a lot of classic "wisdom" aboutMassive MIMO, based on too simplistic system models, is shownto be questionable.

https://www.nowpublishers.com/article/DownloadSummary/SIG-093

Massive MIMO Networks: Spectral, Energy, and Hardware Efficiency

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

In this paper, two types of wideband 3-㏈ ring hybrids are compared and discussed to show the ring hybrid with a set of coupled-line sections better. However, the better one still has a realization problem that perfect matching can be achieved only with －3 ㏈ coupling power. To solve the problem, a set of coupled-line sections with two shorts is synthesized using one- and two-port equivalent circuits and design equations are derived to have perfect matching, regardless of the coupling power. Based on the design equations, a modified Π-type of transmission-line equivalent circuit is newly suggested. It consists of coupled-line sections with two shorts and two open stubs and can be used to reduce a transmission-line section, especially when its electrical length is greater than π. Therefore, the 3λ/4 transmission-line section of a conventional ring hybrid can be reduced to less than π/2. To verify the modified Π-type of transmission- line equivalent circuit, two kinds of simulations are carried out; one is fixing the electrical length of the coupled-line sections and the other fixing its coupling coefficient. The simulation results show that the bandwidths of resulting small transmission lines are strongly dependent on the coupling power. Using modified and conventional Π-types of transmission-line equivalent circuits, a small ring hybrid is built and named a compact wideband coupled-line ring hybrid, due to the fact that a set of coupled-line sections is included. One of compact ring hybrids is compared with a conventional ring hybrid and the compared results demonstrate that the bandwidth of a proposed compact ring hybrid is much wider, in spite of being more than three times smaller in size. To test the compact ring hybrids, a microstrip compact ring hybrid, whose total transmission-line length is 220°, is fabricated and measured. The measured power divisions(S₂₁, S₄₁, S₂₃ and S₄₃) are －2.78 ㏈, －3.34 ㏈, －2.8 ㏈ and －3.2 ㏈, respectively at a design center frequency of 2 ㎓, matching and isolation less than －20 ㏈ in more than 20 % fractional bandwidth.

Compact and Wideband Coupled-Line 3-dB Ring Hybrids

Temperature and process variations have become key issues in design of integrated circuits using deep submicron technologies.In the RF front-end circuitry, these characteristics must be compensated to maintain acceptable performance across all process corners and throughout the temperature variations. This article proposes a new bias circuit technique to compensate the variations by adding a single NMOS to the normally bias circuit. A 2.4GHz and 5.2GHz LNAs with the proposed bias circuit have the power gain variation (S21) of only 0.3 dB for the −40 to 85°C temperature range in a 65nm RF CMOS process. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2694–2697, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27170

A novel bias circuit with temperature and process compensation for RFIC

We investigate on linearization performance of a digital predistortion (DPD) linearization technique based on the low memory power amplifier (PA) for wideband signals. The low memory PA is implemented using a 90W PEP LDMOSFET at 2.14 GHz, and an envelope short matching topology is applied at the active ports to minimize memory effects. To explore memory effects of the implemented amplifier, the amplifier is tested through two-tone signals (up to 20 MHz tone spacing). The proposed DPD technique is compared with DPD technique based on a PA exhibiting serious memory effects for a forward-link WCDMA 3FA signal with 15-MHz bandwidth. The experimental result shows that the proposed DPD scheme has better linearization performance than the conventional digital predistorter and lower computational complexity over the conventional wideband digital predistorters. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1548–1552, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24357

Synergistic digital predistorter based on a low memory power amplifier for wideband linearization

Disclosed are an envelope modulator applying a linear and switching signal to a power supply part of a power amplifier with high efficiency and high linearity installed in a wireless communication terminal and/or a wireless communication system, and an envelope-tracking power amplifier comprising the same. The envelope-tracking power amplifier may include: the envelope modulator which has a wide bandwidth to amplify an envelope input signal and to output the amplified envelope signal; a power amplifier amplifying an RF signal in accordance with the amplified envelope signal and then outputting the amplified RF signal; and a capacitor which is connected to an output stage of the envelope modulator in parallel. The present invention facilitates low noise wireless communication by realizing the power amplifier with high efficiency and high linearity by reducing spurious noise and receiver band noise of the output of the power amplifier.

Envelope-tracking modulator for reducing spurious noise and receiver band noise and power amplifier with envelope-tracking modulator

Design equations of DC blocks terminated in arbitrary impedances are newly suggested and a microstrip DC block is tested for the perfect matching. The DC block is a two-port passive component and the power excited at a port is transmitted into another port. However, all the excited power at the input can not be delivered to the output and therefore most of the conventional DC blocks can not be perfectly matched with arbitrary termination impedances. To solve the matching problem, its one-port equivalent resonant circuit model, from which design equations can be derived, is newly suggested. Using the derived design equations, any DC block can be designed, perfectly matched without any restriction of coupling coefficients. To verify the derived design equations, measurements were carried out and the results are in good agreement with prediction, showing insertion and return losses at 4.1 ㎓ are 0.82 ㏈ and －31 ㏈, respectively.

Bumman Kim

Papers

Compact and Wideband Coupled-Line 3-dB Ring Hybrids

A novel bias circuit with temperature and process compensation for RFIC

Synergistic digital predistorter based on a low memory power amplifier for wideband linearization

Envelope-tracking modulator for reducing spurious noise and receiver band noise and power amplifier with envelope-tracking modulator

Perfectly-Matched DC Blocks Terminated in Arbitrary Impedances