Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

/pdf/fundamentals-of-modern-vlsi-devices-471xd7l9pf.pdf

Fundamentals of Modern VLSI Devices

This document provides updates to IEEE Std 802.16's MIB for the MAC, PHY and asso- ciated management procedures in order to accommodate recent extensions to the standard.

IEEE Standard for Local and Metropolitan Area Networks Part 16: Air Interface for Fixed Broadband Wireless Access Systems Draft Amendment: Management Information Base Extensions

Massive multiple-input multiple-output MIMO is one of themost promising technologies for the next generation of wirelesscommunication networks because it has the potential to providegame-changing improvements in spectral efficiency SE and energyefficiency EE. This monograph summarizes many years ofresearch insights in a clear and self-contained way and providesthe reader with the necessary knowledge and mathematical toolsto carry out independent research in this area. Starting froma rigorous definition of Massive MIMO, the monograph coversthe important aspects of channel estimation, SE, EE, hardwareefficiency HE, and various practical deployment considerations.From the beginning, a very general, yet tractable, canonical systemmodel with spatial channel correlation is introduced. This modelis used to realistically assess the SE and EE, and is later extendedto also include the impact of hardware impairments. Owing tothis rigorous modeling approach, a lot of classic "wisdom" aboutMassive MIMO, based on too simplistic system models, is shownto be questionable.

https://www.nowpublishers.com/article/DownloadSummary/SIG-093

Massive MIMO Networks: Spectral, Energy, and Hardware Efficiency

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

This paper presents an envelope tracking power amplifier (ET PA) using a dual-mode supply modulator for handset application. The supply modulator has a combined structure with a linear amplifier and a switching amplifier. The dual-mode supply modulator operates in high-power mode and low-power mode by providing the supply voltage of the linear amplifier of 5 and 2.5 V, respectively. For 1.74-GHz long-term evolution signal with 10-MHz bandwidth, 6.44-dB peak-to-average power ratio, and 16-quadrature amplitude modulation, the ET PA delivers a power-added efficiency (PAE) of 39.8%, an evolved universal terrestrial radio access adjacent channel leakage ratio (E-UTRAACLR) of - 35.7 dBc, and an error vector magnitude (EVM) of 3.81% at an average output power of 27 dBm. The ET PA also delivers a PAE of 22.6% at an average output power of 18 dBm, which is 6.6% higher than that of the conventional ET PA and 13.1% higher than that of the standalone PA. The supply modulator is connected to a drive stage and a power stage of the PA simultaneously for further enhanced efficiency at a power back-off region. The dual-mode two-stage ET PA delivers a PAE of 38.1%, an E-UTRAACLR of - 32.9 dBc, and an EVM of 4.74% at an average output power of 27 dBm. The dual-mode two-stage ET PA also delivers a PAE of 26.3% at an average output power of 18 dBm, which is 7.8% higher than that of the conventional two-stage ET PA and 16.7% higher than that of the standalone PA.

Envelope-Tracking Two-Stage Power Amplifier With Dual-Mode Supply Modulator for LTE Applications

A novel enhanced Hammerstein behavior model consisting of a weighted memoryless polynomial followed by a Volterra filter is proposed. The weighted polynomial is used for predicting the strong static nonlinear behaviors of the power amplifiers (PAs). Since the Volterra filter is employed only for the mild dynamic nonlinearities, the filter can be implemented with low nonlinear order. Thus, this proposed model is capable of predicting both the static and dynamic nonlinearities of RF PAs with the acceptable complexity. The modeling performance of the proposed model is assessed in terms of in-band and out-of-band errors, such as normalized mean square error and adjacent channel error power ratio, and it is compared with a conventional Hammerstein, an augmented Hammerstein, and a Volterra series with respect to computation complexities such as the number of floating point operations and coefficients. The excellent estimation capability of the enhanced Hammerstein model is validated by two kinds of PAs: Si lateral diffusion metal-oxide-semiconductor and GaN high electron-mobility transistor amplifiers. Furthermore, the proposed scheme is applied to the digital predistortion (DPD) to cancel the nonlinearities of the PAs. The modeling performances and DPD experimental results clearly demonstrate the superiority of the enhanced Hammerstein scheme: the computational complexity is comparable with the augmented Hammerstein behavioral model, but the modeling performance is similar to the Volterra filter, which is the most accurate model.

Enhanced Hammerstein Behavioral Model for Broadband Wireless Transmitters

A signal amplifier includes a splitter for splitting an input signal into first and second signals, first and second bias control networks for generating a base bias signal for a Doherty amplifier in accordance with a power level of the input signal, a carrier amplifier for amplifying the first input signal, a peaking amplifier for amplifying the second input signal and a Doherty output network for combining the amplified signals. Through a simplified transformation of characteristic impedances in the Doherty output network, minimization of circuitry including the signal amplifier is obtained. Further, by controlling the Doherty amplifier in accordance with the power level of the input signal, both high efficiency and high linearity of the signal amplifier are achieved.

Signal amplifier using a doherty amplifier

A saturated power amplifier (PA) optimized for efficiency is described. As a PA is driven into saturated operation, the current source of the device generates a large third harmonic current, which creates a quasi-rectangular current waveform. The large nonlinear output capacitor of the transistor generates a second harmonic voltage with a very small third harmonic component. The second harmonic voltage is in-phase with the fundamental voltage, making a half-sine wave voltage waveform with voltage peaking. These waveforms are similar to those of a class F-1 . The fundamental load at the intrinsic device is resistive with the output capacitance tuned out, which is identical to the class F-1 case. However, the required harmonic impedances are just larger than the impedance levels of the output capacitance for both the second and third harmonics. Therefore, the circuit topology is similar to that of a class E amplifier, which is very simple. The PA implemented using a GaN HEMT delivers the expected good performance using the simple circuit topology.

Saturated Power Amplifier Optimized for Efficiency Using Self-Generated Harmonic Current and Voltage

We develop a new wideband digital feedback predistortion (WDFBPD) technique for modulated signals with wide bandwidths by combining digital feedback predistortion (DFBPD) linearization and memory-effect compensation techniques. For the experiments, a class-AB amplifier using an LDMOSFET with 90-W peak envelope power is employed. The proposed technique is compared with existing DFBPD and memory polynomial (MP) techniques for a 2.14-GHz forward-link WCDMA 2FA signal with 10-MHz carrier spacing. The experimental results show that the new WDFBPD technique has better linearization performance than conventional DFBPD and lower computational complexity than the MP technique.

Bumman Kim

Papers

Envelope-Tracking Two-Stage Power Amplifier With Dual-Mode Supply Modulator for LTE Applications

Enhanced Hammerstein Behavioral Model for Broadband Wireless Transmitters

Signal amplifier using a doherty amplifier

Saturated Power Amplifier Optimized for Efficiency Using Self-Generated Harmonic Current and Voltage

A New Wideband Adaptive Digital Predistortion Technique Employing Feedback Linearization