Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

/pdf/fundamentals-of-modern-vlsi-devices-471xd7l9pf.pdf

Fundamentals of Modern VLSI Devices

This document provides updates to IEEE Std 802.16's MIB for the MAC, PHY and asso- ciated management procedures in order to accommodate recent extensions to the standard.

IEEE Standard for Local and Metropolitan Area Networks Part 16: Air Interface for Fixed Broadband Wireless Access Systems Draft Amendment: Management Information Base Extensions

Massive multiple-input multiple-output MIMO is one of themost promising technologies for the next generation of wirelesscommunication networks because it has the potential to providegame-changing improvements in spectral efficiency SE and energyefficiency EE. This monograph summarizes many years ofresearch insights in a clear and self-contained way and providesthe reader with the necessary knowledge and mathematical toolsto carry out independent research in this area. Starting froma rigorous definition of Massive MIMO, the monograph coversthe important aspects of channel estimation, SE, EE, hardwareefficiency HE, and various practical deployment considerations.From the beginning, a very general, yet tractable, canonical systemmodel with spatial channel correlation is introduced. This modelis used to realistically assess the SE and EE, and is later extendedto also include the impact of hardware impairments. Owing tothis rigorous modeling approach, a lot of classic "wisdom" aboutMassive MIMO, based on too simplistic system models, is shownto be questionable.

https://www.nowpublishers.com/article/DownloadSummary/SIG-093

Massive MIMO Networks: Spectral, Energy, and Hardware Efficiency

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

Any time a person uses a wireless communications device, the equipment will always have some sort of power amplifier (PA) on board to boost the low-level analog signal to a level suitable to maintain adequate signal-to-noise ratio (SNR) over the communication link. There are a variety of applications (and many more to come in the future) requiring PAs of various power levels.

The Head of the Class

We have proposed two methods of enhancing efficiency of an envelope tracking power amplifier (ET PA) from an interlock operation. The first is the utilization of sinking current. The sinking current is a critical efficiency reduction factor since it is a wasted power. To reduce the sinking current, the gate bias of the power amplifier (PA) is increased so that the sinking current is delivered to the PA and is utilized for amplification. The other one is the RF input shaping method. The input signal of ET PAs is a modulated RF signal, and the signal does not guarantee fully saturated operation of the PA at all power levels due to $g_{ m}$ nonlinearity of a device. To obtain the maximum efficiency for all of the envelope voltage, we have found the optimum RF input conditions and applied it to the input of the PA. To verify the methods, the proposed ET PA is implemented using a Cree CGH40045 GaN HEMT. For a long-term evolution 5-MHz signal with 6.5-dB peak-to-average power ratio, the PA delivers power-added efficiency of 58.76% with 40.14-dBm output power at 889 MHz.

Optimization of Envelope Tracking Power Amplifier for Base-Station Applications

Using the present invention, a gate for a MESFET may be fabricated having a minimum gate length while having a low resistance gate. In addition, the present invention provides a method for forming a gate and gate recess which are perfectly aligned which is the optimal structure for high frequency power MESFETs. A two layer masking layer is fabricated having a first layer which may be etched uniformly and a second layer of lithographic material which may be photolithographic material such as AZ resist. A gate opening is patterned in the photoresist material and a metal such as gold is deposited by evaporation from acute angles on opposite sides of the gate opening in the resist. The deposited metal serves as a mask which covers all but a very small portion of the opening in the photoresist. The silicon nitride layer is then etched to form a gate opening and gate recess. Gate contact metal is then deposited in the opening thus formed and the nitride, photoresist and gold layers are removed, lifting off a portion of the gate metal layer thus leaving a T-shaped gate which provides a minimum length at the channel gate interface and provides a low gate resistance.

Process for forming a T-shaped gate structure

This letter presents a wideband noise-canceling LNA focusing on canceling IMD2 and IMD3 By using a complementary CMOS parallel push-pull structure, the IMD2 is cancelled The modified noise-canceling circuit properly suppresses the IMD3 Although the optimum canceling points for the noise and distortions are different, the noise figure is not degraded by the choice The LNA implemented in a 65 nm CMOS process delivers an IIP2 of 25 dBm, an IIP3 of 55 dBm with a power gain of 13 dB and an noise figure of 21–35 dB in a frequency range from 01 to 16 GHz The power consumption is 208 mW at 12 V and the chip area is only $0014~{\rm mm}^{2}$ 

A Wideband CMOS Noise-Canceling Low-Noise Amplifier With High Linearity

Quarter wave transformers are connected to final outputs of a carrier amplifier and a peaking amplifier, which are coupled in parallel to each other, so as to induce a Doherty operation of a microwave Doherty amplifier. Load matching circuits for obtaining a microwave output matching are connected to output terminals of the carrier amplifier and the peaking amplifier. A phase tuning component is positioned behind the load matching circuit. Accordingly, a matching state can be maintained without being changed at a high power level but can be adjusted depending on phase variations at a low power level to attain efficiency enhancements and optimum linearity.

Bumman Kim

Papers

The Head of the Class

Optimization of Envelope Tracking Power Amplifier for Base-Station Applications

Process for forming a T-shaped gate structure

A Wideband CMOS Noise-Canceling Low-Noise Amplifier With High Linearity

Full output matching apparatus of a microwave doherty amplifier