Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

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Fundamentals of Modern VLSI Devices

This document provides updates to IEEE Std 802.16's MIB for the MAC, PHY and asso- ciated management procedures in order to accommodate recent extensions to the standard.

IEEE Standard for Local and Metropolitan Area Networks Part 16: Air Interface for Fixed Broadband Wireless Access Systems Draft Amendment: Management Information Base Extensions

Massive multiple-input multiple-output MIMO is one of themost promising technologies for the next generation of wirelesscommunication networks because it has the potential to providegame-changing improvements in spectral efficiency SE and energyefficiency EE. This monograph summarizes many years ofresearch insights in a clear and self-contained way and providesthe reader with the necessary knowledge and mathematical toolsto carry out independent research in this area. Starting froma rigorous definition of Massive MIMO, the monograph coversthe important aspects of channel estimation, SE, EE, hardwareefficiency HE, and various practical deployment considerations.From the beginning, a very general, yet tractable, canonical systemmodel with spatial channel correlation is introduced. This modelis used to realistically assess the SE and EE, and is later extendedto also include the impact of hardware impairments. Owing tothis rigorous modeling approach, a lot of classic "wisdom" aboutMassive MIMO, based on too simplistic system models, is shownto be questionable.

https://www.nowpublishers.com/article/DownloadSummary/SIG-093

Massive MIMO Networks: Spectral, Energy, and Hardware Efficiency

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

It is commonly known that C/sub BC/ is a very strong nonlinear source in the HBT. To investigate the contribution of the nonlinear C/sub BC/ to the linearity, HBTs with a punch-through collector and normal collector were fabricated. At 2 GHz, the punch-through HBT and normal one exhibit the power gain of 16.6 dB and 16.9 dB, output power of 28.9 dBm and 28.6 dBm, and PAE of 51% and 59%, respectively at 1 dB gain compression point. Two-tone tests were carried out for both power devices. The normal and punch-through HBTs showed IMD3 (third-order intermodulation distortion) levels of -25 dBc and -20 dBc, respectively at 1 dB gain compression point; for both cases, IMD3 dropped to -30 dBc at 1.6 dB output power back off. Because C/sub BC/ of HBT with punch-through is linear at small input signal, the IP3 power of the HBT is higher than that of the normal HBT by 15 dB. We found that RF grounding at the collector terminal is an efficient method for third-order IM power reduction.

The effects of nonlinear C/sub BC/ on the linearity of HBT

Two Doherty amplifiers are designed in MMIC form, which are fabricated using a commercial InGaP/GaAs HBT foundry process. The one is classical Doherty type amplifier with the size ratio of the main device and auxiliary device of 1(N = 1), and the other is an extended Doherty with the size ratio of 3(N = 3). The input and output circuits are made using a hybrid circuit, forming power amplifier modules. The efficiencies are improved about 18.8% at Pout = 23 dBm, about 5 dB backed-off point, from the size ratio N = 1 amplifier, and about 21% at Pout = 18.6 dBm, about 10 dB backed-off point, from the size ratio N = 3 one. We have extended the technology to the fully integrated power amplifier chip. The amplifier shows an output power of 22.5 dBm and a power-added efficiency (PAE) of 21.3% at an error vector magnitude (EVM) of 5%, measured with 54 Mbps 64-QAM-OFDM signals at 5.2 GHz

Doherty Linear Power Amplifiers for Mobile Handset Applications

A novel wideband digital feedback predistortion (WDFBPD) technique employing segmented memory compensation method is proposed for linearization of Doherty amplifier. Its memory effect modeling and linearization capabilities are demonstrated. Starting with an investigation of an abnormal memory effect of the Doherty amplifier, an appropriate dynamic system in the WDFBPD is deduced. The model has two segmented memory compensation elements for carrier PA correction at a low power and peaking PA correction at a high power. The validation of the proposed model in predicting a dynamic nonlinear behavior is carried out by comparing the output spectra, dynamic AM/AM and AM/PM characteristics, and the normalized mean square error. The superiority of the linearization performance is verified using the Doherty amplifier with 90 W Si LDMOSFETs. For a 2.14 GHz forward-link WCDMA 4FA signal, the adjacent channel leakage ratio at 5 MHz offset frequency is −51.5 dBc, which is an improvement of 5 dB compared to the conventional WDFBPD, at an average output power of 44 dBm.

Wideband digital feedback predistortion employing segmented memory compensation for linearization of Doherty amplifier

Envelope Tracking (ET) transmitter is introduced at a high frequecny, 3.5-GHz. As the frequency goes up, ET system has merits because the supply modulator is frequency independent circuit. For the optimum ET operation, the Power Amplifier (PA) has been designed as an average PA to have a maximum Power Add Efficiency (PAE) at the average V ds region. An improved supply modulator without sensing resistor is designed to mitigate the power dissipation. The supply modulator is optimized to average load impedance for higher efficiency and a proper ET shaping function is applied. The proposed supply modulator shows efficiency of 83.0% near the average load impedance of 14.7 Ω. In the interlock experiment, the ET transmitter delivers an excellent PAE performance, of 35.5% at an average output power of 40 dBm. Using digital feedback predistortion (DFBPD) technique, the Relative Constellation Error (RCE) has been successfully satisfied the specification with −32.7 dB. To the best of our knowledge, the PAE of 35.5% is the state-of-the-art for 3.5-GHz transmitter.

Highly efficient Envelope Tracking transmitter at 3.5-GHz

A semilumped output transformer for fully-integrated RF CMOS power amplifier is proposed in this paper. To demonstrate this transformer, a 2.5-GHz CMOS power amplifier is implemented with a 0.18-μm RF CMOS process used for WiMAX application. The power amplifier can achieve 39% PAE (power added efficiency) at P1dB (1 dB compression point) and output power of 30 dBm. The linearity can satisfy the spectrum mask of the WiMAX signal requirement basically. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2857–2860, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23811

Bumman Kim

Papers

The effects of nonlinear C/sub BC/ on the linearity of HBT

Doherty Linear Power Amplifiers for Mobile Handset Applications

Wideband digital feedback predistortion employing segmented memory compensation for linearization of Doherty amplifier

Highly efficient Envelope Tracking transmitter at 3.5-GHz

The fully‐integrated CMOS RF power amplifier using the semilumped transformer