Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

/pdf/fundamentals-of-modern-vlsi-devices-471xd7l9pf.pdf

Fundamentals of Modern VLSI Devices

This document provides updates to IEEE Std 802.16's MIB for the MAC, PHY and asso- ciated management procedures in order to accommodate recent extensions to the standard.

IEEE Standard for Local and Metropolitan Area Networks Part 16: Air Interface for Fixed Broadband Wireless Access Systems Draft Amendment: Management Information Base Extensions

Massive multiple-input multiple-output MIMO is one of themost promising technologies for the next generation of wirelesscommunication networks because it has the potential to providegame-changing improvements in spectral efficiency SE and energyefficiency EE. This monograph summarizes many years ofresearch insights in a clear and self-contained way and providesthe reader with the necessary knowledge and mathematical toolsto carry out independent research in this area. Starting froma rigorous definition of Massive MIMO, the monograph coversthe important aspects of channel estimation, SE, EE, hardwareefficiency HE, and various practical deployment considerations.From the beginning, a very general, yet tractable, canonical systemmodel with spatial channel correlation is introduced. This modelis used to realistically assess the SE and EE, and is later extendedto also include the impact of hardware impairments. Owing tothis rigorous modeling approach, a lot of classic "wisdom" aboutMassive MIMO, based on too simplistic system models, is shownto be questionable.

https://www.nowpublishers.com/article/DownloadSummary/SIG-093

Massive MIMO Networks: Spectral, Energy, and Hardware Efficiency

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

A new linearization method by feedforwarding low-frequency second intermodulation component (f/sub 2/-f/sub 1/) is proposed. Drain voltage modulation by forwarding second intermodulation voltage improves linearity significantly. This new technique, which adopts a simple circuit configuration, has advantages in the stability and bandwidth due to the feedforwarding nature and shows a very good performance in comparison with other harmonic tuning circuits. Analytical derivation of low-frequency feeding voltage gain (/spl beta/) to obtain perfect cancellation of IMD/sub 3/ is presented. For verification of the proposed circuit topology, a two-tone test and a CDMA signal test at carrier frequency 2.15 GHz are performed and show about 18- and 10-dB improvement of IMD/sub 3/ and adjacent channel power ratio (ACPR), respectively.

A new linear amplifier using low-frequency second-order intermodulation component feedforwarding

This paper describes a LINC (Linear Amplification using Nonlinear Components) handset transmitter adopting DC bias control. The power amplifier is operated at a saturated output power level and its level is adjusted by DC bias control. Thus the transmitter guarantees high efficiency at all usable output power level. Due to the LINC linearization, it can operate as a linear power amplifier. The new LINC transmitter can be used as a transmitter for software defined radio (SDR), since it can efficiently amplify both the GSM type constant envelope signal and CDMA type non-constant envelope signal, and its control part is very simple and mostly embodied in the digital domain. For verification, a 1.71 GHz LINC prototype transmitter has been implemented and tested. The results, compared with conventional cases, clearly show the suitability of the new LINC transmitter for SDR application.

SDR transmitter based on LINC amplifier with bias control

As a wireless handset deals with multiple application standards concurrently, RF transmitters and power amplifiers are required to be more power efficient and reconfigurable. In this paper, we review the recent advances in the design of the power amplifiers and transmitters. Then, the systematic design approaches to improve the performance with the digital baseband signal processing are introduced for the next generation mobile handset.

Power Amplifiers and Transmitters for Next Generation Mobile Handsets

This letter presents the design and experimental results of a 1.8/2.14 GHz dual-band CMOS low-noise amplifier (LNA), which is usable for code division multiple access and wideband code division multiple access applications. To achieve the narrow-band gain and impedance matching at both bands, an extra capacitor in parallel with the Cgs of the main transistor and a harmonic tuned load are switched. Except for the output blocking capacitor and series inductor, all components are integrated on a single-chip. The LNA is designed using a 0.13mum- CMOS process and employs a supply voltage of 1.5 V and dissipates a dc power of 7.5 mW. The measured performances are gains of 14.54 dB and 16.6 dB, and noise figures of 1.75 dB and 1.97 dB at the two frequency bands, respectively. The linearity parameters of and P1dBin are -16dBm and -5.8 dBm at the 1.8 GHz, -14.8 dBm and -5.3 dBm at the 2.14 GHz, respectively.

A Sub-2 dB NF Dual-Band CMOS LNA for CDMA/WCDMA Applications

We have proposed a simple and effective weighted polynomial digital predistortion algorithm, which consists of weighting, least square polynomial fit, and de-weighting. The weighting factor is introduced to describe the signal distribution statistics and high harmonic generation at a high power region to improve accuracy of the error function. A low memory linear Doherty power amplifier (PA) has been realized with two 90-W peak envelope power LDMOSFETs using memory effect reduction techniques, and the proposed algorithm has been applied to the PA. For the forward-link wideband code division multiple access 3FA signal, the adjacent channel leakage ratio performance at 5-MHz offset is -56 dBc with power-added efficiency of 20.78% at an average power of 40 dBm. The proposed weighting polynomial algorithm provides a significantly reduced error power and superior convergence behavior with improved linearization capability than the conventional polynomial. Moreover, the low memory Doherty amplifier could be linearized for a wideband signal using the simple algorithm without any memory effect compensation

Bumman Kim

Papers

A new linear amplifier using low-frequency second-order intermodulation component feedforwarding

SDR transmitter based on LINC amplifier with bias control

Power Amplifiers and Transmitters for Next Generation Mobile Handsets

A Sub-2 dB NF Dual-Band CMOS LNA for CDMA/WCDMA Applications

Weighted Polynomial Digital Predistortion for Low Memory Effect Doherty Power Amplifier