Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

/pdf/fundamentals-of-modern-vlsi-devices-471xd7l9pf.pdf

Fundamentals of Modern VLSI Devices

This document provides updates to IEEE Std 802.16's MIB for the MAC, PHY and asso- ciated management procedures in order to accommodate recent extensions to the standard.

IEEE Standard for Local and Metropolitan Area Networks Part 16: Air Interface for Fixed Broadband Wireless Access Systems Draft Amendment: Management Information Base Extensions

Massive multiple-input multiple-output MIMO is one of themost promising technologies for the next generation of wirelesscommunication networks because it has the potential to providegame-changing improvements in spectral efficiency SE and energyefficiency EE. This monograph summarizes many years ofresearch insights in a clear and self-contained way and providesthe reader with the necessary knowledge and mathematical toolsto carry out independent research in this area. Starting froma rigorous definition of Massive MIMO, the monograph coversthe important aspects of channel estimation, SE, EE, hardwareefficiency HE, and various practical deployment considerations.From the beginning, a very general, yet tractable, canonical systemmodel with spatial channel correlation is introduced. This modelis used to realistically assess the SE and EE, and is later extendedto also include the impact of hardware impairments. Owing tothis rigorous modeling approach, a lot of classic "wisdom" aboutMassive MIMO, based on too simplistic system models, is shownto be questionable.

https://www.nowpublishers.com/article/DownloadSummary/SIG-093

Massive MIMO Networks: Spectral, Energy, and Hardware Efficiency

Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

State-of-the-art millimeter-wave power transistors using quantum-well MISFET structures have been developed. Single- and double-quantum-well devices have been built, with maximum currents of 700 mA/mm for the single-well and 900 mA/mm for the double-well devices. The single-well devices delivered a power density of 0.76 W/mm with 3.6-dB gain and 19% efficiency at 60 GHz. The double well MISFETs had a power density of 0.96 W/mm with 3-dB gain and 24% power-added efficiency at 55 GHz. The highest power-added efficiency was 31% with 0.68 W/mm power density and 4-dB gain. The power performance of the double-well device was better than that of the single-well device. >

Millimeter-wave AlGaAs/InGaAs/GaAs quantum well power MISFET

A highly linear power amplifier (PA) with ultra-wide video bandwidth is designed at a Ka-band for 5G application. To get a high linearity with high efficiency, a deep class-AB topology with 2nd harmonic control circuits is employed, reducing the 3rd order nonlinearity. Further, an efficient low-drop out (LDO) regulator is proposed to suppress the memory effect generated by the envelope and fundamental nonlinear mixing. The PA, composed of 3 cascaded common-source (CS) stages, achieves peak PAE of 21.8% at output power of 14 dBm with 22 dB gain. The 3rd order inter-modulation distortion (IMD3) at an output power of 5 dBm is under −30 dBc for a video bandwidth of 1 GHz. The PA and LDO are fabricated in a 65 nm CMOS process and occupy 0.53 mm2.

Linear CMOS power amplifier at Ka-band with ultra-wide video bandwidth

We have developed a new adaptive digital predistortion linearization technique based on RF feedback predistortion (FBPD). By combining the feedback linearization and digital predistortional linearization techniques, the performance of the predistorter is enhanced significantly compared to the conventional digital PD. To clearly explore the characteristics of the digital FBPD, we have compared it to the conventional digital PD based on recursive least-square (RLS) algorithm. For demonstration, Doherty and class F amplifiers are linearized using the proposed digital FBPD. For a 2.14-GHz forward-link WCDMA signal, the ACLRs at 2.5-MHz offset of the Doherty and class F amplifiers are -57.5 dBc and -51.4 dBc which are improved by 20 dB and 27 dB at average output power of 43 dBm and 33 dBm, respectively. The new algorithm could linearize the class F amplifier with high nonlinearity.

A New Adaptive Digital Predistortion Technique Employing Feedback Technique

A new personal communication service (PCS) power amplifier with gate bias control circuit has been developed for high efficiency at low output power level: and for high linearity at high output power level. The efficiency at an average operating power of 16 dBm was improved to 10.5%, and the IMD, at the maximum operating power of 27 dBm to -33 dBc.

Low dissipation power and high linearity PCS power amplifier with adaptive gate bias control circuit

In this paper, we propose an envelope tracking (ET) power amplifier (PA) with a simple correction circuit (SCC) for linear operation. The supply dependent AM-AM and AM-PM distortion of an ET PA is linearized by the SCC which is fabricated on chip. The PA and supply modulator are fabricated using I/O device of CMOS 40nm process. For the 9.35-dB peak-to-average-power ratio, 256-QAM IEEE 802.11ah signal, the ET PA delivers a power-added efficiency of 24%, an average output power of 19.4 dBm and an error vector magnitude of −30 dB.

Bumman Kim

Papers

Millimeter-wave AlGaAs/InGaAs/GaAs quantum well power MISFET

Linear CMOS power amplifier at Ka-band with ultra-wide video bandwidth

A New Adaptive Digital Predistortion Technique Employing Feedback Technique

Low dissipation power and high linearity PCS power amplifier with adaptive gate bias control circuit

Highly linear envelope tracking power amplifier with simple correction circuit