D
Dong Myong Kim
Researcher at Kookmin University
Publications - 233
Citations - 4036
Dong Myong Kim is an academic researcher from Kookmin University. The author has contributed to research in topics: Thin-film transistor & Threshold voltage. The author has an hindex of 25, co-authored 216 publications receiving 3378 citations.
Papers
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Proceedings ArticleDOI
High performance amorphous oxide thin film transistors with self-aligned top-gate structure
Jae Chul Park,Sang-Wook Kim,Sunil Kim,Huaxiang Yin,Ji-Hyun Hur,Sanghun Jeon,Sungho Park,I Hun Song,Youngsoo Park,U.-In Chung,Myung Kwan Ryu,Sangwon Lee,Sungchul Kim,Yongwoo Jeon,Dong Myong Kim,Dae Hwan Kim,Kee-Won Kwon,Chang Jung Kim +17 more
TL;DR: In this paper, a self-aligned top-gate amorphous oxide TFTs for large size and high resolution displays are presented, where Ar plasma is exposed on the source/drain region of active layer to minimize the source and drain series resistances.
Journal ArticleDOI
Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics
Sangwon Lee,Sungwook Park,Sungchul Kim,Yongwoo Jeon,Kichan Jeon,Jun-Hyun Park,Jae-Chul Park,I-hun Song,Chang Jung Kim,Youngsoo Park,Dong Myong Kim,Dae Hwan Kim +11 more
TL;DR: In this paper, an extraction technique for subgap density of states (DOS) in an n-channel amorphous InGaZnO thin-film transistor (TFT) by using multifrequency capacitancevoltage (C -V) characteristics is proposed and verified by comparing the measured I-V characteristics with the technology computer-aided design simulation results incorporating the extracted DOS as parameters.
Journal ArticleDOI
Photonic high-frequency capacitance-voltage characterization of interface states in metal-oxide-semiconductor capacitors
TL;DR: In this paper, a photonic high-frequency capacitance-voltage (HF C-V) response of metal-oxide semiconductor (MOS) capacitors is reported for the analysis of interface states in MOS systems.
Journal ArticleDOI
Transparent, Flexible Strain Sensor Based on a Solution-Processed Carbon Nanotube Network.
Jieun Lee,Meehyun Lim,Jinsu Yoon,Min Seong Kim,Bongsik Choi,Dong Myong Kim,Dae Hwan Kim,Inkyu Park,Sung-Jin Choi +8 more
TL;DR: A sandwich-like structured strain sensor with excellent optical transparency based on highly purified, solution-processed, 99% metallic CNT-polydimethylsiloxane (PDMS) composite thin films that can be applied and controlled based on the need of individual applications.
Journal ArticleDOI
Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics
Kichan Jeon,Chang-Jung Kim,I-hun Song,Jae-Chul Park,Sunil Kim,Sang-Wook Kim,Youngsoo Park,Jun-Hyun Park,Sangwon Lee,Dong Myong Kim,Dae Hwan Kim +10 more
TL;DR: In this paper, the acceptor-like density of states (DOS) is extracted from the optical response of capacitance-voltage characteristics and confirmed by the TCAD simulation comparing with the measured data.