Dong Myong Kim

TL;DR: In this paper, a self-aligned top-gate amorphous oxide TFTs for large size and high resolution displays are presented, where Ar plasma is exposed on the source/drain region of active layer to minimize the source and drain series resistances.

TL;DR: In this paper, an extraction technique for subgap density of states (DOS) in an n-channel amorphous InGaZnO thin-film transistor (TFT) by using multifrequency capacitancevoltage (C -V) characteristics is proposed and verified by comparing the measured I-V characteristics with the technology computer-aided design simulation results incorporating the extracted DOS as parameters.

TL;DR: In this paper, a photonic high-frequency capacitance-voltage (HF C-V) response of metal-oxide semiconductor (MOS) capacitors is reported for the analysis of interface states in MOS systems.

TL;DR: A sandwich-like structured strain sensor with excellent optical transparency based on highly purified, solution-processed, 99% metallic CNT-polydimethylsiloxane (PDMS) composite thin films that can be applied and controlled based on the need of individual applications.

TL;DR: In this paper, the acceptor-like density of states (DOS) is extracted from the optical response of capacitance-voltage characteristics and confirmed by the TCAD simulation comparing with the measured data.