K
Kern Rim
Researcher at IBM
Publications - 89
Citations - 3500
Kern Rim is an academic researcher from IBM. The author has contributed to research in topics: Layer (electronics) & Silicon. The author has an hindex of 27, co-authored 88 publications receiving 3473 citations. Previous affiliations of Kern Rim include GlobalFoundries & Stanford University.
Papers
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Journal ArticleDOI
Fabrication and analysis of deep submicron strained-Si n-MOSFET's
TL;DR: In this paper, deep submicron strained-Si n-MOSFETs were fabricated on strained Si/relaxed Si/sub 0.8/Ge/sub sub 0.2/ heterostructures to yield well matched channel doping profiles after processing, allowing comparison of strained and unstrained Si surface channel devices.
Proceedings ArticleDOI
Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs
Kern Rim,Jack O. Chu,Huajie Chen,Keith A. Jenkins,Thomas S. Kanarsky,Kam-Leung Lee,Anda Mocuta,Huilong Zhu,Ronnen Andrew Roy,J. Newbury,John A. Ott,K. Petrarca,Patricia M. Mooney,D. Lacey,Steven J. Koester,Kevin K. Chan,Diane C. Boyd,Meikei Ieong,Hon-Sum Philip Wong +18 more
TL;DR: In this article, current drive enhancements were demonstrated in the strained-Si PMOSFETs with sub-100 nm physical gate lengths for the first time, as well as in the NMOSFets with well-controlled threshold voltage V/sub T/ and overlap capacitance C/sub OV/ characteristics for L/sub poly/ and L/ sub eff/ below 80 nm and 60 nm.
Proceedings ArticleDOI
Ultrathin high-K gate stacks for advanced CMOS devices
Evgeni Gusev,Douglas A. Buchanan,Eduard A. Cartier,Amit Kumar,D. J. DiMaria,Supratik Guha,Alessandro C. Callegari,Sufi Zafar,Paul C. Jamison,Deborah A. Neumayer,Matthew Copel,Michael A. Gribelyuk,Harald F. Okorn-Schmidt,Christopher P. D'Emic,P. Kozlowski,K.K. Chan,Nestor A. Bojarczuk,Lars-Ake Ragnarsson,Paul Ronsheim,Kern Rim,R.J. Fleming,Anda Mocuta,Atul C. Ajmera +22 more
TL;DR: In this article, the authors discuss device characteristics such as gate leakage currents, flatband voltage shifts, charge trapping, channel mobility, as well as integration and processing aspects for high-K dielectric integration into current Si technology.
Proceedings ArticleDOI
Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs
Kern Rim,K.K. Chan,Leathen Shi,Diane C. Boyd,John A. Ott,N. Klymko,F. Cardone,Leo Tai,Steven J. Koester,Michael A. Cobb,Donald F. Canaperi,B. To,E. Duch,I. Babich,R. Carruthers,P. Saunders,G. Walker,Y. Zhang,Michelle L. Steen,Meikei Ieong +19 more
TL;DR: In this article, a tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure and electron and hole mobility enhancements were demonstrated.
Proceedings ArticleDOI
Strained Si NMOSFETs for high performance CMOS technology
Kern Rim,Steven J. Koester,Michael J. Hargrove,Jack O. Chu,Patricia M. Mooney,John A. Ott,T. Kanarsky,P. Ronsheim,Meikei Ieong,Alfred Grill,Hon-Sum Philip Wong +10 more
TL;DR: In this paper, a 70% increase in electron mobility was observed at vertical fields as high as 1.5 MV/cm for the first time, suggesting a new mobility enhancement mechanism in addition to reduced phonon scattering.