Sabina Ronchin

TL;DR: In this paper, a 3D detector architecture for high volume production is presented, which features electrodes of one doping type only, e.g., n + columns in a p-type substrate.

TL;DR: In this article, the authors report on the latest results from the development of 3D silicon radiation detectors at Fondazione Bruno Kessler of Trento (FBK), Italy (formerly ITC-IRST), which involves columnar electrodes of both doping types, etched from alternate wafer sides, stopping a short distance (d) from the opposite surface.

TL;DR: The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors are reviewed and discussed in this work as mentioned in this paper, which includes the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors.

TL;DR: In this paper, the fabrication of a novel class of micro grippers is demonstrated by means of bulk microelectromechanical systems (MEMS) technology using silicon on insulator wafer substrates and deep reactive ion etching.

TL;DR: In this paper, the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades are discussed.