S
Shengdong Zhang
Researcher at Peking University
Publications - 515
Citations - 5004
Shengdong Zhang is an academic researcher from Peking University. The author has contributed to research in topics: Thin-film transistor & Threshold voltage. The author has an hindex of 30, co-authored 479 publications receiving 3806 citations. Previous affiliations of Shengdong Zhang include China-Japan Friendship Hospital & Hong Kong University of Science and Technology.
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A novel ultrathin elevated channel low-temperature poly-Si TFT
TL;DR: In this paper, a novel ultrathin elevated channel thin-film transistor (UT-ECTFT) made using low-temperature poly-Si was proposed, which exhibits excellent current saturation characteristics even at high bias.
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Solution‐Processed MoS2/Organolead Trihalide Perovskite Photodetectors
Yan Wang,Yan Wang,Raymond Fullon,Muharrem Acerce,Christopher E. Petoukhoff,Jieun Yang,Chenggan Chen,Songnan Du,Sin Ki Lai,Shu Ping Lau,Damien Voiry,Deirdre M. O'Carroll,Gautam Gupta,Aditya D. Mohite,Shengdong Zhang,Hang Zhou,Manish Chhowalla +16 more
TL;DR: The results show that the collection of charge carriers is strongly dependent on the electronic properties of the 2D MoS2 with metallicMoS2 showing high responsivity and the semiconducting phase exhibiting high on/off ratios.
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Efficient quantum dot light-emitting diodes with a Zn0.85Mg0.15O interfacial modification layer
TL;DR: Results indicate that Zn0.85Mg0.15O can serve as an effective interfacial modification layer for suppressing exciton quenching and improving the charge balance of the devices.
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Investigation on Thermally Induced Efficiency Roll-Off: Toward Efficient and Ultrabright Quantum-Dot Light-Emitting Diodes
TL;DR: The significance of thermal management for the development of droop-free and ultra-bright QLED devices for a wide variety of applications including lighting, transparent display, projection display, outdoor digital signage, phototherapy and etc.
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Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices
TL;DR: In this article, a numerical model for obtaining linear doping profiles in the drift region of high-voltage thin-film SOI devices is proposed and experimentally verified, and the dependence of the breakdown voltage on the doping density and doping concentration slope in the linearly doped drift region is also investigated experimentally.