A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission
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TLDR
Direct band photoluminescence peak significantly shifts to longer wavelength as compared to that from bulk Ge due to a combination of strain-induced band gap reduction and quantum confinement effect.Abstract:
We present a method to introduce a large biaxial tensile strain in an ultra-thin germanium-on-insulator (GOI) using selective oxidation of SiGe epilayer on silicon-on-insulator (SOI) substrate. A circular patterned Si0.81Ge0.19 mesa on SOI substrate with the sidewall protected by Si3N4 or SiO2 is selectively oxidized to generate local 12 nm GOI with high crystal quality, which shows enhanced photoluminescence due to large tensile strain. Direct band photoluminescence peak significantly shifts to longer wavelength as compared to that from bulk Ge due to a combination of strain-induced band gap reduction and quantum confinement effect.read more
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Tensile-Strained Germanium-on-Insulator Substrate Fabrication for Silicon-Compatible Optoelectronics
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TL;DR: In this article, a tensile-strained germanium-on-insulator (GOI) substrate is fabricated using heteroepitaxy and layer transfer techniques to obtain a high-quality wafer-scale platform suitable for silicon-compatible optoelectronic device fabrication.
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Effect of tensile strain on the electronic structure of Ge: A first-principles calculation
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Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction
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