Analyzing the Carrier Mobility in Transition-Metal Dichalcogenide MoS2 Field-Effect Transistors
Reads0
Chats0
TLDR
In this paper, a theoretical model that quantitatively captures the scaling of mobility with temperature, carrier density, and thickness of transition metal dichalcogenides (TMDCs) is introduced.Abstract:
Transition-metal dichalcogenides (TMDCs) are an important class of two-dimensional (2D) layered materials for electronic and optoelectronic applications, due to their ultimate body thickness, sizable and tunable bandgap, and decent theoretical room-temperature mobility. So far, however, all TMDCs show much lower mobility experimentally because of the collective effects by foreign impurities, which has become one of the most important limitations for their device applications. Here, taking MoS2 as an example, the key factors that bring down the mobility in TMDC transistors, including phonons, charged impurities, defects, and charge traps, are reviewed. A theoretical model that quantitatively captures the scaling of mobility with temperature, carrier density, and thickness is introduced. By fitting the available mobility data from literature over the past few years, one obtains the density of impurities and traps for a wide range of transistor structures. It shows that interface engineering can effectively reduce the impurities, leading to improved device performances. For few-layer TMDCs, the lopsided carrier distribution is analytically modeled to elucidate the experimental increase of mobility with the number of layers. From our analysis, it is clear that the charge transport in TMDC samples is a very complex problem that must be handled carefully.read more
Citations
More filters
Journal ArticleDOI
Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures
TL;DR: This review of the challenges in the CVD growth of 2D materials highlights recent advances in the controlled growth of single crystal 2Dmaterials, with an emphasis on semiconducting transition metal dichalcogenides.
Journal ArticleDOI
Two-dimensional transition metal dichalcogenides: interface and defect engineering
TL;DR: Two-dimensional transition metal dichalcogenides (TMDCs) have been considered as promising candidates for next generation nanoelectronics and their corresponding applications in electronic and optoelectronic devices.
Journal ArticleDOI
Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors
Yan Wang,Jong Chan Kim,Ryan J. Wu,Jenny Martinez,Xiuju Song,Xiuju Song,Jieun Yang,Jieun Yang,Fang Zhao,Andre Mkhoyan,Hu Young Jeong,Manish Chhowalla,Manish Chhowalla,Manish Chhowalla +13 more
TL;DR: Ultraclean van der Waals bonds between gold-capped indium and a monolayer of the two-dimensional transition-metal dichalcogenide molybdenum disulfide show desirably low contact resistance at the interface, enabling high-performance field-effect transistors.
Journal ArticleDOI
A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.
TL;DR: A new quasi-non-volatile 2D semi-floating gate memory with high speed and long refresh time with the potential to bridge the gap between volatile and non-Volatile memory technologies, enabling a high-speed and low-power random access memory.
Journal ArticleDOI
Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics
TL;DR: The overall recent progress made in developing MoS2 based flexible FETs, OLED displays, nonvolatile memory (NVM) devices, piezoelectric nanogenerators (PNGs), and sensors for wearable electronic and optoelectronic devices is discussed.
References
More filters
Journal ArticleDOI
Direct evidence for atomic defects in graphene layers
Ayako Hashimoto,Kazu Suenaga,Alexandre Gloter,Alexandre Gloter,Koki Urita,Koki Urita,Sumio Iijima +6 more
TL;DR: Observations in situ of defect formation in single graphene layers by high-resolution TEM are reported and are expected to be of use when engineering the properties of carbon nanostructures for specific device applications.
Journal ArticleDOI
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
Kibum Kang,Saien Xie,Lujie Huang,Yimo Han,Pinshane Y. Huang,Kin Fai Mak,Cheol-Joo Kim,David A. Muller,Jiwoong Park +8 more
TL;DR: The preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide and tungsten disulPHide, grown directly on insulating SiO2 substrates, with excellent spatial homogeneity over the entire films are reported, a step towards the realization of atomically thin integrated circuitry.
MonographDOI
The physics of low-dimensional semiconductors : an introduction
TL;DR: In this paper, the Golden Rule is applied to properties of quantum wells and the properties of GaAs-AlAs alloys at room temperature and the Hermite's equation: harmonic oscillator.
Journal ArticleDOI
Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide
Arend M. van der Zande,Pinshane Y. Huang,Daniel Chenet,Timothy C. Berkelbach,Youmeng You,Gwan Hyoung Lee,Tony F. Heinz,David R. Reichman,David A. Muller,James Hone +9 more
TL;DR: In this article, the microstructure of monolayer molybdenum disulfide has been studied and the authors show that triangular islands are single crystals and merge to form faceted tilt and mirror boundaries that are stitched together by lines of 8- and 4- membered rings.
Journal ArticleDOI
2D materials: to graphene and beyond
TL;DR: This review comprises the current state-of-the-art of the vast literature in concepts and methods already known for isolation and characterization of graphene, and rationalizes the quite disperse literature in other 2D materials such as metal oxides, hydroxides and chalcogenides, and metal-organic frameworks.