Journal ArticleDOI
Carbon nanomaterials for non-volatile memories
TLDR
Carbon nanomaterials have greatly advanced nonvolatile memory technology as mentioned in this paper, including memory electrodes, interfacial engineering layers, memory selectors and resistive-switching media.Abstract:
Carbon nanomaterials have greatly advanced non-volatile memory technology. In this Review, applications of various carbon nanomaterials as memory electrodes, interfacial engineering layers, memory selectors and resistive-switching media are discussed in the context of emerging non-volatile memory devices.read more
Citations
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Designing crystallization in phase-change materials for universal memory and neuro-inspired computing
TL;DR: This Review focuses on the crystallization mechanisms of PCMs as well as the design principles to achieve PCMs with high switching speeds and good data retention, which will aid the development of PCM-based universal memory and neuro-inspired devices.
Journal ArticleDOI
Nonvolatile Memories Based on Graphene and Related 2D Materials.
Simone Bertolazzi,Paolo Bondavalli,Stephan Roche,Stephan Roche,Tamer San,Sung-Yool Choi,Luigi Colombo,Francesco Bonaccorso,Paolo Samorì +8 more
TL;DR: An overview of graphene and related 2D materials (GRMs) in different types of NVM cells is provided, including resistive random-access, flash, magnetic and phase-change memories.
Journal ArticleDOI
2D materials for spintronic devices
TL;DR: This review discusses various 2D materials, including graphene and other inorganic 2D semiconductors, in the context of scientific and technological advances in spintronic devices and introduces the spin-orbit and spin-valley coupled properties of 2D material to explore their potential to address the crucial issues of contemporary electronics.
Journal ArticleDOI
Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems
TL;DR: This work focuses on the development of nonvolatile memories and neuromorphic computing systems based on QD thin-film solids and discusses the advantageous traits of QDs for novel and optimized memory techniques in both conventional flash memories and emerging memristors.
Journal Article
Black Phosphorus Field-effect Transistors
Likai Li,Yijun Yu,Guo Jun Ye,Q. Q. Ge,Xuedong Ou,Hua Wu,Donglai Feng,Xianhui Chen,Yuanbo Zhang +8 more
TL;DR: In this paper, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
References
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Electric Field Effect in Atomically Thin Carbon Films
Kostya S. Novoselov,Andre K. Geim,Sergey V. Morozov,Da Jiang,Y. Zhang,S. V. Dubonos,Irina V. Grigorieva,A. A. Firsov +7 more
TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
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Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene
TL;DR: Graphene is established as the strongest material ever measured, and atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.
Journal ArticleDOI
Synthesis of graphene-based nanosheets via chemical reduction of exfoliated graphite oxide
Sasha Stankovich,Dmitriy A. Dikin,Richard D. Piner,Kevin A. Kohlhaas,Alfred Kleinhammes,Yuanyuan Jia,Yue Wu,SonBinh T. Nguyen,Rodney S. Ruoff +8 more
TL;DR: In this paper, a colloidal suspension of exfoliated graphene oxide sheets in water with hydrazine hydrate results in their aggregation and subsequent formation of a high surface area carbon material which consists of thin graphene-based sheets.
Journal ArticleDOI
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
Xuesong Li,Weiwei Cai,Jinho An,Seyoung Kim,Junghyo Nah,Dongxing Yang,Richard D. Piner,Aruna Velamakanni,Inhwa Jung,Emanuel Tutuc,Sanjay K. Banerjee,Luigi Colombo,Rodney S. Ruoff +12 more
TL;DR: It is shown that graphene grows in a self-limiting way on copper films as large-area sheets (one square centimeter) from methane through a chemical vapor deposition process, and graphene film transfer processes to arbitrary substrates showed electron mobilities as high as 4050 square centimeters per volt per second at room temperature.
Journal ArticleDOI
Two-dimensional atomic crystals
Kostya S. Novoselov,Da Jiang,Fred Schedin,Timothy J. Booth,V. V. Khotkevich,Sergey V. Morozov,Andre K. Geim +6 more
TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.