Comparative studies of Al-doped ZnO and Ga-doped ZnO transparent conducting oxide thin films
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TLDR
The structural and microstructural properties as a function of Al and Ga concentrations through X-ray diffraction and scanning electron microscopy analysis and the optical bandgap and photoluminescence were estimated.Abstract:
We have investigated the influences of aluminum and gallium dopants (0 to 2.0 mol%) on zinc oxide (ZnO) thin films regarding crystallization and electrical and optical properties for application in transparent conducting oxide devices. Al- and Ga-doped ZnO thin films were deposited on glass substrates (corning 1737) by sol–gel spin-coating process. As a starting material, AlCl3⋅6H2O, Ga(NO3)2, and Zn(CH3COO)2⋅2H2O were used. A lowest sheet resistance of 3.3 × 103 Ω/□ was obtained for the GZO thin film doped with 1.5 mol% of Ga after post-annealing at 650°C for 60 min in air. All the films showed more than 85% transparency in the visible region. We have studied the structural and microstructural properties as a function of Al and Ga concentrations through X-ray diffraction and scanning electron microscopy analysis. In addition, the optical bandgap and photoluminescence were estimated.read more
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References
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Journal ArticleDOI
Optical Properties and Electronic Structure of Amorphous Germanium
Jan Tauc,R. Grigorovici,A. Vancu +2 more
TL;DR: In this article, the optical constants of amorphous Ge were determined for the photon energies from 0.08 to 1.6 eV, and the absorption is due to k-conserving transitions of holes between the valence bands as in p-type crystals.
Journal ArticleDOI
Green luminescent center in undoped zinc oxide films deposited on silicon substrates
Bixia Lin,Zhuxi Fu,Yunbo Jia +2 more
TL;DR: The photoluminescence (PL) spectra of undoped ZnO films deposited on Si substrates by dc reactive sputtering have been studied in this paper, where two emission peaks, centered at 3.18 eV and 2.38 eV, were found to correspond to oxide antisite defect OZn rather than oxygen vacancy VO, zinc vacancy VZn, interstitial zinc Zni, and interstitial oxygen Oi.
Journal ArticleDOI
The Interpretation of the Properties of Indium Antimonide
TL;DR: In this paper, the optical properties of InSb are analyzed and precise values for the position and temperature dependence of the absorption edge are given, which is explained by the very low effective mass of the conduction electrons, estimated by three methods to be about 0.03 of the free electron mass.
Journal ArticleDOI
Criteria for Choosing Transparent Conductors
TL;DR: In this article, the physical properties of these materials are reviewed and compared, and a comparison of their properties can be found in Section 5.2.1] and Section 6.1.