scispace - formally typeset
Open AccessJournal ArticleDOI

Controlled stripes of ultrafine ferroelectric domains.

TLDR
The underlying theory towards growth of ultra-fine domain patterns is developed, the theory is substantiated by numerical modelling of practical situations and the gained understanding is implemented using the most widely applied ferroelectric, Pb(Zr,Ti)O3, demonstrating controlled stripes of 10 nm wide domains that extend in one direction along tens of micrometres.
Abstract
In the pursuit of ferroic-based (nano)electronics, it is essential to minutely control domain patterns and domain switching. The ability to control domain width, orientation and position is a prerequisite for circuitry based on fine domains. Here, we develop the underlying theory towards growth of ultra-fine domain patterns, substantiate the theory by numerical modelling of practical situations and implement the gained understanding using the most widely applied ferroelectric, Pb(Zr,Ti)O3, demonstrating controlled stripes of 10 nm wide domains that extend in one direction along tens of micrometres. The observed electrical conductivity along these thin domains embedded in the otherwise insulating film confirms their potential for electronic applications.

read more

Content maybe subject to copyright    Report

Citations
More filters
Journal ArticleDOI

Controlling domain wall motion in ferroelectric thin films

TL;DR: Using piezoresponse force microscopy, the control and manipulation of domain walls in ferroelectric thin films of Pb(Zr,Ti)O₃ with Pt top electrodes with classical Stefan problem is shown.
Journal ArticleDOI

New modalities of strain-control of ferroelectric thin films

TL;DR: How these new approaches to strain engineering provide promising routes to control and decouple ferroelectric susceptibilities and create new modes of response not possible in the confines of conventional strain engineering is discussed.
Journal ArticleDOI

A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

TL;DR: The last developments in two areas of interest for the applications of BaTiO3 films on silicon are reviewed, namely integrated photonics, which benefits from the large Pockels effect of Ba TiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.
Journal ArticleDOI

Reversible optical control of macroscopic polarization in ferroelectrics

TL;DR: In this article, a reversible optical change of the ferroelectric domain configuration was achieved by using polarized light to tune the macroscopic polarization and its related properties by means of a non-contact external control.
References
More filters
Journal ArticleDOI

Quantitative measurement of displacement and strain fields from HREM micrographs

TL;DR: In this paper, a method for measuring and mapping displacement fields and strain fields from high-resolution electron microscope (HREM) images is developed based upon centring a small aperture around a strong reflection in the Fourier transform of an HREM lattice image and performing an inverse Fourier transformation.
Journal ArticleDOI

Effect of Mechanical Boundary Conditions on Phase Diagrams of Epitaxial Ferroelectric Thin Films

TL;DR: In this paper, a phenomenological thermodynamic theory of ferroelectric thin films epitaxially grow on cubic substrates is developed using a new form of the thermodynamic potential, which corresponds to the ac tual mechanical boundary conditions of the problem.
Journal ArticleDOI

Above-bandgap voltages from ferroelectric photovoltaic devices

TL;DR: A fundamentally different mechanism for photovoltaic charge separation is reported, which operates over a distance of 1-2 nm and produces voltages that are significantly higher than the bandgap.
Journal ArticleDOI

Conduction at domain walls in oxide multiferroics

TL;DR: The observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO(3) shows that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall.
Related Papers (5)