Controlled stripes of ultrafine ferroelectric domains.
L. Feigl,P. V. Yudin,Igor Stolichnov,Tomas Sluka,Konstantin Shapovalov,Mahamudu Mtebwa,Cosmin S. Sandu,Xian-Kui Wei,Alexander K. Tagantsev,Nava Setter +9 more
TLDR
The underlying theory towards growth of ultra-fine domain patterns is developed, the theory is substantiated by numerical modelling of practical situations and the gained understanding is implemented using the most widely applied ferroelectric, Pb(Zr,Ti)O3, demonstrating controlled stripes of 10 nm wide domains that extend in one direction along tens of micrometres.Abstract:
In the pursuit of ferroic-based (nano)electronics, it is essential to minutely control domain patterns and domain switching. The ability to control domain width, orientation and position is a prerequisite for circuitry based on fine domains. Here, we develop the underlying theory towards growth of ultra-fine domain patterns, substantiate the theory by numerical modelling of practical situations and implement the gained understanding using the most widely applied ferroelectric, Pb(Zr,Ti)O3, demonstrating controlled stripes of 10 nm wide domains that extend in one direction along tens of micrometres. The observed electrical conductivity along these thin domains embedded in the otherwise insulating film confirms their potential for electronic applications.read more
Citations
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Journal ArticleDOI
Controlling domain wall motion in ferroelectric thin films
TL;DR: Using piezoresponse force microscopy, the control and manipulation of domain walls in ferroelectric thin films of Pb(Zr,Ti)O₃ with Pt top electrodes with classical Stefan problem is shown.
Journal ArticleDOI
New modalities of strain-control of ferroelectric thin films
Anoop R. Damodaran,Joshua C. Agar,Shishir Pandya,Zuhuang Chen,Zuhuang Chen,Liv R. Dedon,Ruijuan Xu,Brent A. Apgar,Sahar Saremi,Lane W. Martin,Lane W. Martin +10 more
TL;DR: How these new approaches to strain engineering provide promising routes to control and decouple ferroelectric susceptibilities and create new modes of response not possible in the confines of conventional strain engineering is discussed.
Journal ArticleDOI
Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films
Joshua C. Agar,Joshua C. Agar,Anoop R. Damodaran,M. B. Okatan,Josh Kacher,Josh Kacher,Christoph Gammer,Christoph Gammer,Rama K. Vasudevan,Shishir Pandya,Liv R. Dedon,R. V. K. Mangalam,Gabriel Velarde,Stephen Jesse,Nina Balke,Andrew M. Minor,Andrew M. Minor,Sergei V. Kalinin,Lane W. Martin,Lane W. Martin +19 more
TL;DR: Control of ferroelastic domains is demonstrated using controlled composition and strain gradients to provide new modalities of domain engineering and potential for as-yet-unrealized nanoscale functional devices.
Journal ArticleDOI
A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications
TL;DR: The last developments in two areas of interest for the applications of BaTiO3 films on silicon are reviewed, namely integrated photonics, which benefits from the large Pockels effect of Ba TiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.
Journal ArticleDOI
Reversible optical control of macroscopic polarization in ferroelectrics
Fernando Rubio-Marcos,Diego A. Ochoa,Adolfo del Campo,Miguel Aurelio Alonso García,Miguel Aurelio Alonso García,Germán R. Castro,José F. Fernández,Jose E. García +7 more
TL;DR: In this article, a reversible optical change of the ferroelectric domain configuration was achieved by using polarized light to tune the macroscopic polarization and its related properties by means of a non-contact external control.
References
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Above-bandgap voltages from ferroelectric photovoltaic devices
S. Y. Yang,Jan Seidel,Jan Seidel,Byrnes Steven J,Byrnes Steven J,Padraic Shafer,Chan-Ho Yang,Marta D. Rossell,Pu Yu,Ying-Hao Chu,James F. Scott,Joel W. Ager,Lane W. Martin,Ramamoorthy Ramesh,Ramamoorthy Ramesh +14 more
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Journal ArticleDOI
Conduction at domain walls in oxide multiferroics
Jan Seidel,Lane W. Martin,Lane W. Martin,Qing He,Q. Zhan,Ying-Hao Chu,A. Rother,M. E. Hawkridge,Petro Maksymovych,Pu Yu,M. Gajek,Nina Balke,Sergei V. Kalinin,Sibylle Gemming,Feng Wang,Gustau Catalan,James F. Scott,Nicola A. Spaldin,Joseph Orenstein,Joseph Orenstein,Ramamoorthy Ramesh,Ramamoorthy Ramesh +21 more
TL;DR: The observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO(3) shows that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall.
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