Journal ArticleDOI
Demonstration of a Curable Nanowire FinFET Using Punchthrough Current to Repair Hot-Carrier Damage
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TLDR
In this article, the degradation caused by gate oxide damage in a FinFET on silicon-on-insulator is recovered using punchthrough current via a silicon fin, where localized Joule heat driven by drain current is induced in the channel.Abstract:
Device degradation caused by gate oxide damage in a FinFET on silicon-on-insulator is recovered using punchthrough current via a silicon fin. As the high level of drain current flows under a punchthrough mode, localized Joule heat driven by drain current, enough to anneal the gate oxide, is induced in the channel. This selectively cured localized damage in the FinFET. The dependence of recovery on the gate length, substrate material underneath the channel, and the proper range of annealing voltage are investigated.read more
Citations
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Journal ArticleDOI
Curing of Aged Gate Dielectric by the Self-Heating Effect in MOSFETs
TL;DR: In this paper, the authors re-examine self-recovery technologies, which are fully compatible with CMOS fabrication, and show that generated Joule heat arising from device operation can uniformly anneal the gate dielectric and effectively recover damage.
Journal ArticleDOI
Curing of Hot-Carrier Induced Damage by Gate-Induced Drain Leakage Current in Gate-All-Around FETs
TL;DR: In this paper, the gate oxide aging in a gate-all-around (GAA) FET fabricated on a bulk substrate was successfully cured by gate-induced drain leakage (GIDL) current.
Proceedings ArticleDOI
The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation
Michiel Vandemaele,Kai-Hsin Chuang,Erik Bury,Stanislav Tyaginov,Guido Groeseneken,Ben Kaczer +5 more
TL;DR: It is observed that non-zero gate bias applied during a high temperature anneal following hot-carrier degradation (HCD) impacts degradation recovery in nFETs.
Journal ArticleDOI
Modeling of Repeated FET Hot-Carrier Stress and Anneal Cycles Using Si–H Bond Dissociation/Passivation Energy Distributions
TL;DR: In this paper, the authors report measurements of multiple hot-carrier (HC) stress and high-temperature anneal cycles repeated on the same nFETs fabricated in a commercial 40-nm bulk CMOS technology.
Journal ArticleDOI
Impact of Post-Metal Annealing With Deuterium or Nitrogen for Curing a Gate Dielectric Using Joule Heat Driven by Punch-Through Current
TL;DR: In this article, the authors experimentally confirmed the relationship between passivation gas species and transistor-level annealing performance during post-metal anneal and showed that the existence of deuterium in a device was strongly associated with curing behavior.
References
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Journal ArticleDOI
Phonon scattering in silicon films with thickness of order 100 nm
Y. S. Ju,Kenneth E. Goodson +1 more
TL;DR: In this paper, the authors studied the relaxation times of room-temperature thermal phonons through measurements of thermal conduction along monocrystalline silicon films of thickness down to 74 nm and showed that the effective mean free path of the dominant phonons at room temperature is close to 300 nm and thus much longer than the value of 43 nm predicted when phonon dispersion is neglected.
Journal ArticleDOI
Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films
TL;DR: In this paper, the lateral thermal conductivity of heavily doped polycrystalline silicon films is measured using polycrystaline silicon microbridges elevated three micrometers above a silicon substrate.
Journal ArticleDOI
Time Resolved Annealing of Interface Traps in Polysilicon Gate Metal‐Oxide‐Silicon Capacitors
TL;DR: In this paper, the authors use processus thermiques rapides for observer le recuit des pieges dans la grille en silicium polycristallin d'un condensateur MOS.
Journal ArticleDOI
Time-resolved measurements of self-heating in SOI and strained-silicon MOSFETs using photon emission microscopy
TL;DR: In this article, a simple noninvasive optical technique for characterization of self-heating dynamics in advanced metaloxide-semiconductor field-effect transistors is reported for the first time using time-resolved photon emission microscopy to measure the temperature-dependent luminescence of offstate leakage current.