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Journal ArticleDOI

Dilute doping, defects, and ferromagnetism in metal oxide systems.

Satishchandra Ogale
- 03 Aug 2010 - 
- Vol. 22, Iss: 29, pp 3125-3155
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TLDR
In this review an attempt is made to capture the scope and spirit of this effort aimed at inducing spin functionality (magnetism, spin polarization) and thereby novel magneto-transport and Magneto-optic effects in such oxides.
Abstract
Over the past decade intensive research efforts have been carried out by researchers around the globe on exploring the effects of dilute doping of magnetic impurities on the physical properties of functional non-magnetic metal oxides such as TiO2 and ZnO. This effort is aimed at inducing spin functionality (magnetism, spin polarization) and thereby novel magneto-transport and magneto-optic effects in such oxides. After an early excitement and in spite of some very promising results reported in the literature, this field of diluted magnetic semiconducting oxides (DMSO) has continued to be dogged by concerns regarding uniformity of dopant incorporation, the possibilities of secondary ferromagnetic phases, and contamination issues. The rather sensitive dependence of magnetism of the DMSO systems on growth methods and conditions has led to interesting questions regarding the specific role played by defects in the attendant phenomena. Indeed, it has also led to the rapid re-emergence of the field of defect ferromagnetism. Many theoretical studies have contributed to the analysis of diverse experimental observations in this field and in some cases to the predictions of new systems and scenarios. In this review an attempt is made to capture the scope and spirit of this effort highlighting the successes, concerns, and questions.

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Citations
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Two‐Dimensional Dielectric Nanosheets: Novel Nanoelectronics From Nanocrystal Building Blocks

TL;DR: The progress made in the properties of dielectric nanosheets is reviewed, highlighting emerging functionalities in electronic applications and a perspective on the advantages offered by this class of materials for future nanoelectronics.
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Selenide-Based Electrocatalysts and Scaffolds for Water Oxidation Applications

TL;DR: Selenide-based electrocatalysts and scaffolds on carbon cloth are successfully fabricated and demonstrated for enhanced water oxidation applications, suggesting the potential of these materials to serve as advanced oxygen evolution reaction catalysts.
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Recent developments in emerging two-dimensional materials and their applications

TL;DR: In this paper, a review of 2D materials is presented, along with their advantages and disadvantages, and some effective device-fabrication approaches, such as heterostructure approaches, are applied to further enhance the properties of two-dimensional materials; their novel device applications and opportunities are also presented.
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Two dimensional and layered transition metal oxides

TL;DR: A comprehensive overview of 2D and layered transition metal oxides can be found in this paper, where the fundamentals and applications of planar TMOs are discussed and future prospects and pathways to new developments are presented.
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Thin Films of Magnetically Doped Topological Insulator with Carrier-Independent Long-Range Ferromagnetic Order

TL;DR: Thin films of magnetically doped topological insulators are found to possess carrier-independent long-range ferromagnetic order with perpendicular magnetic anisotropy, demonstrating this material as a promising system to realize the quantized anomalous Hall effect.
References
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Journal ArticleDOI

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TL;DR: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron, which has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices.
Journal ArticleDOI

Spintronics: Fundamentals and applications

TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
Journal ArticleDOI

Making Nonmagnetic Semiconductors Ferromagnetic

TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
Journal ArticleDOI

Diluted magnetic semiconductors

TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
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