Journal ArticleDOI
Enhancement of minority carrier transport in forward biased GaN p-n junction
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In this article, a forward bias application to a GaN p-n junction (current density ~12 A/cm2) leads to a 1.6-fold increase in the minority electron diffusion length in the p-layer of an epitaxial GaN structure.Abstract:
Forward bias application to a GaN p-n junction (current density ~12 A/cm2) leads to a 1.6-fold increase in the minority electron diffusion length in the p-layer of an epitaxial p-n structure. The effect persists for several days, and is likely associated with electron injection-induced charging of Mg-related deep levels in p-type GaN.read more
Citations
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Journal ArticleDOI
Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
Kazuhide Kumakura,Kazuhide Kumakura,Kazuhide Kumakura,Toshiki Makimoto,Toshiki Makimoto,Toshiki Makimoto,Naoki Kobayashi,Naoki Kobayashi,Tamotsu Hashizume,Takashi Fukui,Hideki Hasegawa +10 more
TL;DR: In this article, the minority electron diffusion length in p-GaN was investigated by performing electron-beam-induced current measurements of GaN p-n junction diodes.
Journal ArticleDOI
Minority carrier transport in GaN and related materials
TL;DR: In this article, the authors summarized the available information on the subject of minority carrier transport in ZnO-based semiconductors, focusing on its temperature dependence and the dynamics of nonequilibrium carrier recombination.
Journal ArticleDOI
Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus
O. Lopatiuk,W. Burdett,Leonid Chernyak,Kelly P. Ip,Young-Woo Heo,David P. Norton,S. J. Pearton,B. Hertog,Peter Chow,Andrei Osinsky +9 more
TL;DR: In this article, the authors reported an increase of up to 25% in minority electron diffusion length from the initial value of ∼2.12μm and a simultaneous decrease of the peak near-bandedge cathodoluminescence intensity.
Journal ArticleDOI
Electron trapping effects in C- and Fe-doped GaN and AlGaN
TL;DR: In this paper, the effects of low energy electron beam irradiation on cathodoluminescence and electron beam-induced current were studied by using a scanning electron microscope (SEM).
Journal ArticleDOI
Cathodoluminescence studies of the electron injection-induced effects in GaN
TL;DR: In this paper, the activation energy for the electron injection effect, estimated from the temperature-dependent cathodoluminescence, is in agreement with the thermal ionization energy of the Mg-acceptor in GaN.
References
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Journal ArticleDOI
Fabrication and performance of GaN electronic devices
TL;DR: In this paper, the development of fabrication processes for these devices and the current state-of-the-art in device performance, for all of these structures, are discussed. And the authors also detail areas where more work is needed, such as reducing defect densities and purity of epitaxial layers, the need for substrates and improved oxides and insulators, improved p-type doping and contacts and an understanding of the basic growth mechanisms.
Journal ArticleDOI
Deep levels and persistent photoconductivity in GaN thin films
C. H. Qiu,J. I. Pankove +1 more
TL;DR: In this article, the photoconductivity spectra and the photocurrent response time were measured using a weak probe light at several times after the samples had been kept in the dark, and it was suggested that metastable centers at 1.1, 1.40, and 2.04 eV above the valence band edge are responsible for the PPC behavior in Mg-doped GaN, and that Ga vacancy is the candidate for PPC effect in n-type GaN.
Journal ArticleDOI
Electron beam induced current measurements of minority carrier diffusion length in gallium nitride
TL;DR: In this article, the diffusion length of holes in n-type GaN is found to decrease from 3.4 to 1.2 μm in the doping range of 5×1015-2×1018 cm−3.
Journal ArticleDOI
Minority carrier transport in GaN and related materials
TL;DR: In this article, the authors summarized the available information on the subject of minority carrier transport in ZnO-based semiconductors, focusing on its temperature dependence and the dynamics of nonequilibrium carrier recombination.
Journal ArticleDOI
Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices.
TL;DR: In this paper, the diffusion length, L, of electrons in Mg-doped p-GaN grown by metal-organic chemical vapor deposition was found to increase linearly from 0.55 to 2.0 μm during 1500 s of electron beam irradiation.