Ferroelectric Si-Doped HfO 2 Device Properties on Highly Doped Germanium
Patrick D. Lomenzo,Qanit Takmeel,Chris M. Fancher,Chuanzhen Zhou,Nicholas G. Rudawski,Saeed Moghaddam,Jacob L. Jones,Toshikazu Nishida +7 more
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TLDR
In this article, the Si-doped HfO2 thin films have favorably improved ferroelectric properties on the p+Ge substrate due to the lack of a dielectric interfacial layer between HmO2 and Ge.Abstract:
Ferroelectric Si-doped HfO2 thin films are integrated into three different device stacks with a p+ Ge substrate, a p+ Si substrate, and a TaN bottom metal gate. The ferroelectric behavior of the Si-doped HfO2 thin films is strongly dependent on the bottom interfaces. The Si-doped HfO2 thin films have favorably improved ferroelectric properties on the p+ Ge substrate due to the lack of a dielectric interfacial layer between HfO2 and Ge. The low-voltage operation and cycling stability of Si-doped HfO2 ferroelectric thin films on Ge can lead to the realization of high performance, robust Ge ferroelectric field-effect transistors for nonvolatile memory applications.read more
Citations
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Journal ArticleDOI
Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm
TL;DR: In this paper, the ferroelectric properties of ultrathin Y-doped HfO2 films were investigated via direct detection of displacement currents during polarization switching, and it was shown that the dependence on the thickness within the 30 to 3'nm range revealed that the ferromagnetic properties decrease rapidly below a critical thickness.
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Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides
Proceedings ArticleDOI
High endurance strategies for hafnium oxide based ferroelectric field effect transistor
Johannes Müller,P. Polakowski,Stefan Müller,Halid Mulaosmanovic,J. Ocker,Thomas Mikolajick,Stefan Slesazeck,Stefan Flachowsky,M. Trentzsch +8 more
TL;DR: In this paper, potential strategies to overcome the endurance limitations of hafnium oxide based ferroelectric field effect transistors are discussed, based on the assumption that the high interfacial field stress and the accompanying charge injection in the metal-ferroelectricinsulator- semiconductor gate stack are the dominant degradation mechanisms during program and erase operation.
Journal ArticleDOI
Ferroelectric phase stabilization of HfO2 by nitrogen doping
TL;DR: In this paper, the role of nitrogen doping in ferroelectricity was discussed from the viewpoint of charge balance and bond-constraining effects, and it was found that N doping can cause the transition from a monoclinic phase to a highly symmetric phase.
Journal ArticleDOI
Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y.
Xianghan Xu,Fei-Ting Huang,Yubo Qi,Sobhit Singh,Karin M. Rabe,Dimuthu Obeysekera,Junjie Yang,Ming-Wen Chu,Sang-Wook Cheong +8 more
TL;DR: In this paper, the Pbc21 phase and ferroelectricity in bulk single-crystalline HfO2:Y were reported using a state-of-the-art laser-diode-heated floating zone technique.
References
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TL;DR: In this article, the authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices.
Journal ArticleDOI
Ferroelectricity in hafnium oxide thin films
TL;DR: In this paper, it was shown that crystalline phases with ferroelectric behavior can be formed in thin thin films of SiO2 doped hafnium oxide, which is suitable for field effect transistors and capacitors due to its excellent compatibility to silicon technology.
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Academic and industry research progress in germanium nanodevices
TL;DR: Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.
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Why is nonvolatile ferroelectric memory field-effect transistor still elusive?
Tso-Ping Ma,Jin-Ping Han +1 more
TL;DR: In this article, the authors examined two major causes of short memory retention: depolarization field and finite gate leakage current, and suggested a solution to the memory retention problem, which involves the growth of single-crystal, single domain ferroelectric on Si.
Journal ArticleDOI
TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
Patrick D. Lomenzo,Qanit Takmeel,Chuanzhen Zhou,Chris M. Fancher,Eric Lambers,Nicholas G. Rudawski,Jacob L. Jones,Saeed Moghaddam,Toshikazu Nishida +8 more
TL;DR: In this paper, the chemical interface properties of sputtered TaN bottom and top electrodes were investigated with x-ray photoelectron spectroscopy and it was shown that the chemical heterogeneity of the bottom-and top- electrode interfaces gives rise to an internal electric field, where Ta-O bonds at the bottom electrode interface and Hf-N bonds at both electrode interfaces are identified.