Journal ArticleDOI
Flexible memristive memory array on plastic substrates.
TLDR
This paper describes the development of NOR type flexible resistive random access memory (RRAM) with a one transistor-one memristor structure (1T-1M) by integration of a high-performance single crystal silicon transistor with a titanium oxide based Memristor without any electrical interference from adjacent cells.Abstract:
The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has recently increased due to their advantages over present rigid electronic systems. Flexible memory is an essential part of electronic systems for data processing, storage, and communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. This paper describes the development of NOR type flexible resistive random access memory (RRAM) with a one transistor–one memristor structure (1T-1M). By integration of a high-performance single crystal silicon transistor with a titanium oxide based memristor, random access to memory cells on flexible substrates was achieved without any electrical interference from adjacent cells. The work presented here can provide a new appr...read more
Citations
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Journal ArticleDOI
Flexible Nanocomposite Generator Made of BaTiO 3 Nanoparticles and Graphitic Carbons
Kwi-Il Park,Minbaek Lee,Ying Liu,San Moon,Geon-Tae Hwang,Guang Zhu,Ji-Eun Kim,Sang Ouk Kim,Do Kyung Kim,Zhong Lin Wang,Keon Jae Lee +10 more
TL;DR: One way of energy harvesting without such restraints is to utilize piezoelectric materials that can convert vibrational and mechanical energy sources from human activities such as pressure, bending, and stretching motions into electrical energy.
Journal ArticleDOI
Self-Powered Cardiac Pacemaker Enabled by Flexible Single Crystalline PMN-PT Piezoelectric Energy Harvester
Geon-Tae Hwang,Hyewon Park,Jeong Ho Lee,SeKwon Oh,Kwi-Il Park,Myunghwan Byun,Hyelim Park,Ahn Gun,Chang Kyu Jeong,Kwangsoo No,Hyuk-Sang Kwon,Sang Goo Lee,Boyoung Joung,Keon Jae Lee +13 more
TL;DR: A flexible single-crystalline PMN-PT piezoelectric energy harvester is demonstrated to achieve a self-powered artificial cardiac pacemaker that meets the standard for charging commercial batteries but also for stimulating the heart without an external power source.
Journal ArticleDOI
Bendable inorganic thin-film battery for fully flexible electronic systems.
Koo Min,Kwi-Il Park,Seung Hyun Lee,Minwon Suh,Duk Young Jeon,Jang Wook Choi,Kisuk Kang,Keon Jae Lee +7 more
TL;DR: This paper presents a flexible thin-film LIB developed using the universal transfer approach, which enables the realization of diverse flexible LIBs regardless of electrode chemistry and can form high-temperature (HT) annealed electrodes on polymer substrates for high-performance LIBs.
Journal ArticleDOI
Towards the development of flexible non-volatile memories.
TL;DR: The flash memories, resistive random access memories and ferroelectric random access memory/ferroelectric field-effect transistor memories (FeRAM/FeFET) are considered as promising candidates for next generation non-volatile memory device.
Journal ArticleDOI
Layered memristive and memcapacitive switches for printable electronics
Alexander Bessonov,M. N. Kirikova,Dmitrii I. Petukhov,Dmitrii I. Petukhov,Mark Allen,Tapani Ryhänen,Marc J. A. Bailey +6 more
TL;DR: It is demonstrated that solution-processed MoOx/MoS2 and WOx/WS2 heterostructures sandwiched between two printed silver electrodes exhibit an unprecedentedly large and tunable electrical resistance range from 10(2) to 10(8) Ω combined with low programming voltages of 0.1-0.2 V.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
TL;DR: A nanoscale silicon-based memristor device is experimentally demonstrated and it is shown that a hybrid system composed of complementary metal-oxide semiconductor neurons and Memristor synapses can support important synaptic functions such as spike timing dependent plasticity.
Journal ArticleDOI
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Myoung-Jae Lee,Chang Bum Lee,Dongsoo Lee,Seung Ryul Lee,Man Chang,Ji-Hyun Hur,Young-Bae Kim,Chang-Jung Kim,David H. Seo,Sunae Seo,U-In Chung,In-Kyeong Yoo,Kinam Kim +12 more
TL;DR: This work demonstrates a TaO(x)-based asymmetric passive switching device with which it was able to localize resistance switching and satisfy all aforementioned requirements, and eliminates any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.