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Proceedings ArticleDOI

Fundamental limitations of conventional-FET biosensors: Quantum-mechanical-tunneling to the rescue

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TLDR
In this article, the authors proposed a method to detect biomolecules using Field Effect Transistors (FETs) in order to overcome the fundamental limitation of sub-threshold swing (SS) due to Boltzmann tyranny.
Abstract
Electrical detection of biomolecules using Field-Effect-Transistors (FETs) [1–5] is very attractive, since it is label-free, inexpensive, allows scalability and on-chip integration of both sensor and measurement systems. Nanostructured FETs, especially nanowires have gained special importance due to their high electrostatic control and large surface-to-volume ratio. In order to configure the FET as a biosensor (Fig. 1(a)), the dielectric/oxide layer on the semiconductor is functionalized with specific receptors. These receptors capture the desired target biomolecules (a process called conjugation), which due to their charge produce gating effect on the semiconductor, thus changing its electrical properties such as current, conductance etc. Thus it is intuitive, that greater the response of the FET to the gating effect, higher will be its sensitivity where sensitivity can be defined as the ratio of change in current due to biomolecule conjugation to the initial current (before conjugation). While the highest response to gating effect can be obtained in the subthreshold region, the conventional FETs (CFET) suffer severely due to the theoretical limitation on the minimum achievable Subthreshold Swing (SS) of [K B T/q ln(10)] due to the Boltzmann tyranny (Fig. 1(b)) effect where K B is the Boltzmann constant and T is the temperature. This also poses fundamental limitations on the sensitivity and response time of CFET based biosensors [6]. In recent times, Tunnel- FETs have attracted a lot of attention for low power digital applications [7]–[17], due to their ability to overcome the fundamental limitation in SS (60 mV/decade) of CFETs. Recently, it has been shown that the superior subthreshold behavior of TFETs can be leveraged to achieve highly efficient biosensors [6]. This is possible, thanks to the fundamentally different current injection mechanism in TFETs in the form of band-to-band tunneling [17]. The working principle of TFET biosensors is illustrated in Fig. 1c.

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Citations
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Journal ArticleDOI

Functionalization of Transition Metal Dichalcogenides with Metallic Nanoparticles: Implications for Doping and Gas-Sensing

TL;DR: The experimental investigation of the doping effect on TMDs is presented, mainly focusing on molybdenum disulfide (MoS2), by metallic nanoparticles (NPs), exploring noble metals such as silver, palladium, and platinum as well as the low workfunction metals for the first time.
Journal ArticleDOI

A Charge-Plasma-Based Dielectric-Modulated Junctionless TFET for Biosensor Label-Free Detection

TL;DR: In this article, a charge-plasma concept is introduced for the first time to implement a dielectric-modulated junctionless tunnel field effect transistor (DM-JLTFET) for biosensor label-free detection.
Journal ArticleDOI

Comparative Performance Analysis of the Dielectrically Modulated Full- Gate and Short-Gate Tunnel FET-Based Biosensors

TL;DR: In this article, a short-gate tunneling-field-effect-transistor (SG-TFET) structure has been investigated for the dielectrically modulated biosensing applications in comparison with a full-gate TFET structure of similar dimensions.
Journal ArticleDOI

Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor

TL;DR: In this article, a vertical dielectrically modulated tunnel field effect transistor (V-DMTFET) was used as a label-free biosensor for the first time and compared with lateral DMTFET using underlap concept and gate work function engineering.
Journal ArticleDOI

Study and Analysis of the Effects of SiGe Source and Pocket-Doped Channel on Sensing Performance of Dielectrically Modulated Tunnel FET-Based Biosensors

TL;DR: In this article, the effect of use of silicon-germanium (SiGe) source and n+-pocket-doped channel is investigated with the help of extensive device-level simulations.
References
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Journal ArticleDOI

Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species

TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Journal ArticleDOI

Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

TL;DR: In this paper, a 70-nm n-channel tunneling field effect transistor (TFET) with sub-threshold swing (SS) of 52.8 mV/dec at room temperature was demonstrated.
Journal ArticleDOI

Band-to-band tunneling in carbon nanotube field-effect transistors.

TL;DR: How the structure of the nanotube is the key enabler of this particular one-dimensional tunneling effect is discussed, which is controlled here by the valence and conduction band edges in a bandpass-filter-like arrangement.
Journal ArticleDOI

Low-subthreshold-swing tunnel transistors

TL;DR: In this paper, the subthreshold swing of field effect interband tunnel transistors is not limited to 60 mV/dec as in the MOSFET, but instead is shown to be sub-60 mv/dec.
Journal ArticleDOI

Electronic detection of DNA by its intrinsic molecular charge

TL;DR: The selective and real-time detection of label-free DNA using an electronic readout demonstrates the most direct and simple translation of genetic information to microelectronics.
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