Journal ArticleDOI
GaInAsN/GaAs laser diodes operating at 1.52 [micro sign]m
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TLDR
In this article, the first report of room-temperature laser emission in the 1.5 /spl mu/m range based on GaAs was given for a ridge waveguide laser diode at a wavelength of 1517 nm.Abstract:
GaInAsN/GaAs double quantum well (DQW) lasers have been grown by solid source molecular beam epitaxy (MBE). Room-temperature pulsed operation is demonstrated for a ridge waveguide laser diode at a wavelength of 1517 nm. This is the first report of room-temperature laser emission in the 1.5 /spl mu/m range based on GaAs.read more
Citations
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Journal ArticleDOI
Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer
TL;DR: In this paper, the 1.55 μm GaInNAs/GaAs multiple quantum well (QW) heterostructures with a GaNAs barrier and space layer (BSL) were presented.
Journal ArticleDOI
Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers
TL;DR: In this paper, single layers have been grown lattice matched on GaAs using MOVPE at low growth temperatures and optical properties, including band-gap energies and optical constants have been determined with photoluminescence and spectroscopic ellipsometry.
Journal ArticleDOI
GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
TL;DR: In this article, the authors demonstrate that a careful optimization of the molecular-beam-epitaxy growth conditions allows them to obtain high-quality GaInNAs/GaAs quantum-well (QW) heterostructures exhibiting a perfect two-dimensional microstructure at high In and N contents.
Journal ArticleDOI
Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content
TL;DR: In this paper, the optical properties of GaInNAs/GaAs multi-quantum wells were investigated by photoluminescence excitation (PLE) spectroscopy, under various excitation intensities and at various temperatures.
Journal ArticleDOI
Large ground-to-first-excited-state transition energy separation for InAs quantum dots emitting at 1.3 μm
Yongqiang Wei,Shumin Wang,Fariba Ferdos,Josip Vukusic,Anders Larsson,Qing Xiang Zhao,Mahdad Sadeghi +6 more
TL;DR: By capping InAs quantum dots (QDs) with a thin intermediate layer of InAlAs instead of GaAs, the radiative transition wavelengths are redshifted as mentioned in this paper.
References
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Journal ArticleDOI
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
TL;DR: In this paper, a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics in long-wavelength-range laser diodes is proposed.
Journal ArticleDOI
1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
TL;DR: In this paper, a 1.3/spl mu/m continuous wave lasing operation was demonstrated in a GaInNAs quantum-well laser at room temperature, which was achieved by increasing the nitrogen content (up to 1%) in the quantum layer.
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Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 - 1.38 [micro sign]m
TL;DR: In this article, the authors applied optimized low-temperature metal organic vapour phase epitaxy (MOVPE) using the group V sources 1,1-dimethylhydrazine (UDMHy) in combination with tertiarybutylarsine (TBAs) to achieve record low threshold current densities of 0.18 and 0.16 W/A per facet, respectively, for 800 µm long broad area lasers emitting at 1.28 and 1.38 µm, respectively.
Journal ArticleDOI
High power CW operation of InGaAsN lasers at 1.3 [micro sign]m
TL;DR: In this paper, the authors reported room temperature, continuous-wave operation at 13 /spl mu/m for InGaAsN triple quantum well lasers, with a slope efficiency of 059 W/A (output per two facets).
Journal ArticleDOI
High-temperature characteristic in 1.3-/spl mu/m-range highly strained GaInNAs ridge stripe lasers grown by metal-organic chemical vapor deposition
TL;DR: In this paper, a double quantum-well ridge stripe laser with different In contents (37% and 39%) grown by metal-organic chemical vapor deposition is demonstrated, with In content of 37% emitting at 1.294 /spl mu/m, and a low threshold current density of 1.1.0 kA/cm/sup 2/ at 20/spl deg/C and a high characteristic temperature of 148 K in the temperature range of