Journal ArticleDOI
GaN metal–semiconductor–metal UV sensor with multi-layer graphene as Schottky electrodes
Chang-Ju Lee,Sang-Bum Kang,Hyeon-Gu Cha,Chul-Ho Won,Seul-Ki Hong,Byung Jin Cho,Hongsik Park,Jung-Hee Lee,Sung-Ho Hahm +8 more
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TLDR
In this article, a GaN-based metal-semiconductor-metal (MSM)-type UV sensor using a multilayer graphene as transparent Schottky electrodes was fabricated.Abstract:
We fabricated a GaN-based metal–semiconductor–metal (MSM)-type UV sensor using a multilayer graphene as transparent Schottky electrodes. The fabricated GaN MSM UV sensor showed a high photo-to-dark current contrast ratio of 3.9 × 105 and a UV-to-visible rejection ratio of 1.8 × 103 at 7 V. The as-fabricated GaN MSM UV sensor with graphene electrodes has a low bias dependence of maximum photoresponsivity and a noise-like response at a visible wavelength in the 500 nm region. These problems were successfully solved by treatment with a buffered oxide etcher (BOE), and the photoresponse characteristics of the fabricated GaN MSM UV sensor after the treatment were better than those before the treatment.read more
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Graphene-Based Semiconductor Heterostructures for Photodetectors.
Dong Hee Shin,Suk-Ho Choi +1 more
TL;DR: The studies of PDs based on graphene/semiconductor hybrid heterostructures, including device physics/design, performance, and process technologies for the optimization ofPDs are reviewed.
Journal ArticleDOI
Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance
TL;DR: The improved photoresponse with the AgAu alloy NPs is correlated with the simultaneous effect of strong plasmon absorption and scattering, increased injection of hot electrons into the GaN conduction band and reduced barrier height at the alloy Nps/GaN interface.
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Ultrahigh Sensitivity Graphene/Nanoporous GaN Ultraviolet Photodetectors.
TL;DR: The high performance together with a simple and low-cost fabrication process endow these graphene/nanoporous GaN heterojunctions with great potential for future selective detection of weak UV optical signals.
Journal ArticleDOI
Hybrid graphene/unintentionally doped GaN ultraviolet photodetector with high responsivity and speed
TL;DR: In this article, a hybrid graphene/unintentionally doped (UID) GaN UV photodetector with both high responsivity and high speed is reported Holes in graphene, which are induced by the photogenerated electrons trapped at the graphene/UID GaN interface according to the capacitive effect, have a long lifetime owing to the electron-hole pair separation in space Graphene acts as a carrier transport channel and greatly increases the charge collection efficiency under an external bias voltage.
Journal ArticleDOI
Hybrid graphene/GaN ultraviolet photo-transistors with high responsivity and speed
TL;DR: This work explores the possibility of using hybrid graphene/GaN phototransistors to get high responsivity, high speed, and large photosensitive area and opens a feasible pathway to develop large area ultraviolet photodetectors with highresponsivity and high speed.
References
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Journal ArticleDOI
Graphene photonics and optoelectronics
TL;DR: Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability as discussed by the authors, and its true potential lies in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultrawideband tunability.
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Kinetics and kinematics for translational motions in microgravity during parabolic flight.
TL;DR: The goal is to combine kinetic and kinematic data to examine translational motions during microgravity adaptations to encourage fine-control motions as these reduce the risk of injury and increase controllability.
Journal ArticleDOI
Transfer of large-area graphene films for high-performance transparent conductive electrodes
Xuesong Li,Yanwu Zhu,Weiwei Cai,Mark D. Borysiak,Boyang Han,David Chen,Richard D. Piner,Luigi Colombo,Rodney S. Ruoff +8 more
TL;DR: An improved transfer process of large-area graphene grown on Cu foils by chemical vapor deposition is reported on, finding that the transferred graphene films have high electrical conductivity and high optical transmittance that make them suitable for transparent conductive electrode applications.
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Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film
TL;DR: In this paper, an effective passivation technique for AlGaN/GaN high-electron-mobility transistors (HEMTs) was presented, which features an AlN thin film grown by plasma-enhanced atomic layer deposition (PEALD).
Journal ArticleDOI
GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts
C.H. Chen,Shoou-Jinn Chang,Yan-Kuin Su,Gou-Chung Chi,Jim Y. Chi,C.A. Chang,Jinn-Kong Sheu,J. Chen +7 more
TL;DR: In this article, a GaN-based metal-semiconductor-metal (MSM) photodetector with ITO transparent contacts was fabricated and a maximum 0.12-A photocurrent with a photocurrent to dark current contrast higher than five orders of magnitude during ultraviolet irradiation was obtained.