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Open AccessJournal ArticleDOI

Grain Boundary Engineering for Achieving High Thermoelectric Performance in n-Type Skutterudites

TLDR
In this paper, a liquid phase compaction method is used to fabricate low-angle grain boundaries with dense dislocation arrays, which shows the typical feature of lowangle grain boundary with denser dislocation array.
Abstract
Grain or phase boundaries play a critical role in the carrier and phonon transport in bulk thermoelectric materials. Previous investigations about controlling boundaries primarily focused on the reducing grain size or forming nanoinclusions. Herein, liquid phase compaction method is first used to fabricate the Yb-filled CoSb3 with excess Sb content, which shows the typical feature of low-angle grain boundaries with dense dislocation arrays. Seebeck coefficients show a dramatic increase via energy filtering effect through dislocation arrays with little deterioration on the carrier mobility, which significantly enhances the power factor over a broad temperature range with a high room-temperature value around 47 μW cm−2 K−1. Simultaneously, the lattice thermal conductivity could be further suppressed via scattering phonons via dense dislocation scattering. As a result, the highest average figure of merit ZT of ≈1.08 from 300 to 850 K could be realized, comparable to the best reported result of single or triple-filled Skutterudites. This work clearly points out that low-angle grain boundaries fabricated by liquid phase compaction method could concurrently optimize the electrical and thermal transport properties leading to an obvious enhancement of both power factor and ZT.

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Journal ArticleDOI

High thermoelectric performance from high carrier mobility and reduced lattice thermal conductivity in Ba, Yb double-filled Skutterudites

TL;DR: In this paper, Ba, Yb double filling and liquid-phase compaction method synergistically optimize carrier concentration and reduce lattice thermal conductivity, resulting in exceptional high PF of 57μW cm−1 K−2 at 773 K and excellent thermoelectric figure of merit ZT = 1.53 at 823 K.
Journal ArticleDOI

Versatile Vanadium Doping Induces High Thermoelectric Performance in GeTe via Band Alignment and Structural Modulation

TL;DR: In this paper, density functional theory calculations are implemented to predict that V is an effective dopant for GeTe to enlarge the bandgap and converge the energy offset, which suppresses the bipolar conduction and increases the effective mass.
Journal ArticleDOI

Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials

TL;DR: In this article, an attempt is made to minimize the atomic disorder in order to enhance the carrier mobility, which in turn favors a higher power factor, and significantly enhanced mobility is achieved in the Ni-deficient composition, resulting in peak power factor of ≈50 μW cm−1 K−2, which is comparable to the best n-type halfHeusler compounds.
Journal ArticleDOI

Modification of Bulk Heterojunction and Cl Doping for High-Performance Thermoelectric SnSe2/SnSe Nanocomposites.

TL;DR: This study provides a new way for optimizing the thermoelectric properties of materials through interface regulation through Cl doping in SnSe2/SnSe nanocomposites.
References
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Journal ArticleDOI

Complex thermoelectric materials.

TL;DR: A new era of complex thermoelectric materials is approaching because of modern synthesis and characterization techniques, particularly for nanoscale materials, and the strategies used to improve the thermopower and reduce the thermal conductivity are reviewed.
Book

Electronic processes in non-crystalline materials

TL;DR: The Fermi Glass and the Anderson Transition as discussed by the authorsermi glass and Anderson transition have been studied in the context of non-crystalline Semiconductors, such as tetrahedrally-bonded semiconductors.
Journal ArticleDOI

Opportunities and challenges for a sustainable energy future

TL;DR: This Perspective provides a snapshot of the current energy landscape and discusses several research and development opportunities and pathways that could lead to a prosperous, sustainable and secure energy future for the world.
Journal ArticleDOI

High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys

TL;DR: Electrical transport measurements, coupled with microstructure studies and modeling, show that the ZT improvement is the result of low thermal conductivity caused by the increased phonon scattering by grain boundaries and defects, which makes these materials useful for cooling and power generation.
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