Proceedings ArticleDOI
HgCdTe epilayers on GaAs: growth and devices
V. S. Varavin,V. V. Vasiliev,Sergey A. Dvoretsky,Nikolay N. Mikhailov,Victor N. Ovsyuk,Yuri G. Sidorov,A. O. Suslyakov,M. V. Yakushev,A. L. Aseev +8 more
TLDR
In this article, a new generation of ultra high vacuum set, ultra-fast ellipsometer of high accuracy and automatic system for reproducibility of MCT Hs's growth on substrates up to 4" in diameter.Abstract:
View of basic and specific physical and chemical features of growth and defect formation in mercury cadmium telluride (MCT) heterostructures (HS's) on GaAs substrates by molecular beam epitaxy (MBE) was made. On the basis of this knowledge a new generation of ultra high vacuum set, ultra-fast ellipsometer of high accuracy and automatic system for control of technological processes was produced for reproducibility of MCT Hs's growth on substrates up to 4" in diameter. The development of industrially oriented technolgoy of MCT HS's growth by MBE on GaAs substrates 2" in diameter and without intentional doping is presented. The electrical characteristics of n-type and p-type of MCT HS's and uniformity of MCT composition over the surface area are excellent. The residual donor and acceptor centres are supposed as hypothetically tellurium atoms in metallic sublattice ("antisite" tellurium) and double-ionised mercury vacancies. The technology of fabricating focal plane arrays is developed. The high quality characteristics of infrared detectors conductance and diode mode are measured. Calculations of detector parameters predicted the improvement in serial resistance and detectivity of infrared diode detectors based on MCT heterostructures with graded composition throughout the thickness.read more
Citations
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Journal ArticleDOI
HgCdTe infrared detector material: history, status and outlook
TL;DR: A review of the history, the present status and possible future developments of HgCdTe ternary alloy for infrared (IR) detector applications is presented in this article.
Journal ArticleDOI
Growth of Hg1-xCdxTe nanostructures by molecular beam epitaxy with ellipsometric control
N. N. Mikhailov,R.N. Smirnov,S.A. Dvoretsky,Yu.G. Sidorov,V. A. Shvets,E. V. Spesivtsev,S. V. Rykhlitski +6 more
TL;DR: In this paper, the authors demonstrate the growth of potential barriers, wells and periodic nanostructures on the basis of Hg1-xCdxTe by molecular beam epitaxy.
Journal ArticleDOI
Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μm
S. V. Morozov,V. V. Rumyantsev,Mikhail A. Fadeev,M. S. Zholudev,K. E. Kudryavtsev,A. V. Antonov,A. M. Kadykov,A. A. Dubinov,N. N. Mikhailov,Sergey A. Dvoretsky,Vladimir I. Gavrilenko +10 more
TL;DR: In this article, the authors report on stimulated emission at wavelengths up to 19.5μm from HgTe/HgCdTe quantum well heterostructures with wide gap HgCDTe dielectric waveguide, grown by molecular beam epitaxy on GaAs(013) substrates.
Journal ArticleDOI
Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector
E. García-Hemme,R. García-Hernansanz,Javier Olea,David Pastor,A. del Prado,Ignacio Mártil,Germán González-Díaz,Germán González-Díaz +7 more
TL;DR: In this paper, the authors reported room-temperature operation of 1.7 × 1 cm2 infrared photoconductive photodetectors based on silicon supersaturated with titanium.
Journal ArticleDOI
Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures
Sergey Danilov,Bernhard Wittmann,Peter Olbrich,Wolfgang Eder,Wilhelm Prettl,Leonid Golub,E. Beregulin,Z. D. Kvon,N. N. Mikhailov,Sergey A. Dvoretsky,Vadim A. Shalygin,Nguyen Q. Vinh,A. F. G. van der Meer,B. N. Murdin,Sergey Ganichev +14 more
TL;DR: In this article, a fast, room temperature detection scheme for the polarization ellipticity of laser radiation, with a bandwidth that stretches from the infrared to the terahertz range, is presented.
References
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Journal ArticleDOI
Effect of dislocations on performance of LWIR HgCdTe photodiodes
K. Jówikowski,Antoni Rogalski +1 more
TL;DR: In this article, a simple model of dislocations as cylindrical regions confined by surfaces with definite surface recombination is proposed, and the influence of dislocation density on the R0A product of long wavelength infrared (LWIR) HgCdTe photodiodes is also discussed.
Journal ArticleDOI
Growth and characterization of CdTe/Si heterostructures: effect of substrate orientation
David J. Smith,S. C Y Tsen,D. Chandrasekhar,Peter A. Crozier,Saroj Rujirawat,G. Brill,Y. P. Chen,Robert Sporken,Robert Sporken,S. Sivananthan +9 more
TL;DR: In this article, the authors compared the microstructure and compositional profiles of CdTe/Si heterostructures grown by molecular beam epitaxy on (001), (211) and (111) silicon substrates.
Journal ArticleDOI
Heteroepitaxy of HgCdTe (211)B on Ge substrates by molecular beam epitaxy for infrared detectors
TL;DR: In this article, high-performance middle wavelength infrared HgCdTe 32-element photodiode linear arrays, using the standard LETI/LIR planar n-on-p ion implanted technology, were fabricated on CdTe/Ge substrates.
Journal ArticleDOI
Dislocation density reduction by thermal annealing of HgCdTe epilayers grown by molecular beam epitaxy on GaAs substrates
TL;DR: In this article, post growth thermal annealing has been used to reduce the threading dislocation density of HgCdTe epilayers grown on (211)B GaAs substrates by molecular beam epitaxy.
Journal ArticleDOI
Infrared diodes fabricated with HgCdTe grown by molecular beam epitaxy on GaAs substrates
TL;DR: In this article, an infrared photodiodes fabricated with HgCdTe epilayers grown on GaAs substrates by molecular beam epitaxy (MBE) are reported for the first time.