scispace - formally typeset
Journal ArticleDOI

High-performance Ge quantum dot decorated graphene/zinc-oxide heterostructure infrared photodetector.

TLDR
A novel size-controllable germanium quantum dot (Ge QD) is synthesized and decorated onto reduced graphene oxide (RGO) fragments to overcome the low infrared (IR) photoresponses of pristine graphene and manifests great potential in the future application of graphene-based IR photodetector.
Abstract
A novel size-controllable germanium quantum dot (Ge QD) is synthesized and decorated onto reduced graphene oxide (RGO) fragments to overcome the low infrared (IR) photoresponses (∼0.1 A/W)13,14 of pristine graphene. With the integration of flexible substrate, monolayer graphene (MLG) electrode and n-type zinc oxide (ZnO), a high-performance QD-decorated-RGO/ZnO heterostructure infrared photodetector is reported in this study. The Ge QD-decorated-RGO hybrid photosensitive composite improves the responsivity (∼9.7 A/W, 1400 nm) in IR waveband without sacrificing the response speed (∼40 μs rise time and 90 μs recovery time). In addition, the effective barrier formed between graphene and ZnO interface restricts the dark current (∼1.4 nA, -3 V) to guarantee the relatively excellent rectifying behavior and high on/off ratio (∼10(3)) for this IR photodetector. With these superior inherent properties and micron-sized sensing active area, this photodetector manifests great potential in the future application of graphene-based IR photodetector.

read more

Citations
More filters
Journal ArticleDOI

An Overview of the Development of Flexible Sensors.

TL;DR: Recent studies on flexible sensors for biological analytes, ions, light, and pH are outlined, contemporary studies on device structure, materials, and fabrication methods for flexible sensors are discussed, and a market overview is provided.
Journal ArticleDOI

Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions.

TL;DR: This review investigates the experimental efforts in interfacing 2D layers with 3D materials and analyzes the properties of the heterojunctions formed between them, calling for careful reconsideration of the physical models describing the junction behavior.
Journal ArticleDOI

Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge‐Carrier Engineering

TL;DR: In this paper, a review of the latest researches on enhancing the photoelectric performance of photodetectors based on metal oxide semiconductors via chargecarrier engineering is presented.
Journal ArticleDOI

Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications

TL;DR: In this article, the fundamental components of heterojunctions including UV response semiconductors and other materials functionalized with unique effects are discussed, and several applications based on heterojunction/heterostructure UV PDs are discussed.
Journal ArticleDOI

Graphene Hybrid Structures for Integrated and Flexible Optoelectronics

TL;DR: Recently, integration of Gr with silicon (Si) complementary metal-oxide-semiconductor (CMOS) circuits, the human body, and soft tissues is successfully demonstrated, opening promising opportunities for wearable sensors and biomedical electronics.
References
More filters
Journal ArticleDOI

Quantifying defects in graphene via Raman spectroscopy at different excitation energies

TL;DR: It is found that the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy, and a simple equation for the determination of the point defect density in graphene via Raman spectroscopy is presented.
Journal ArticleDOI

Quantifying defects in graphene via Raman spectroscopy at different excitation energies.

TL;DR: In this paper, a Raman study of Ar+-bombarded graphene samples with increasing ion doses was conducted and it was shown that the ratio between the D and G peak intensities strongly depends on the laser excitation energy.
Journal ArticleDOI

Hybrid graphene-quantum dot phototransistors with ultrahigh gain

TL;DR: A gain of ∼10(8) electrons per photon and a responsivity of ∼ 10(7) A W(-1) in a hybrid photodetector that consists of monolayer or bilayer graphene covered with a thin film of colloidal quantum dots is demonstrated.
Journal ArticleDOI

All-optical control of light on a silicon chip

TL;DR: The experimental demonstration of fast all-optical switching on silicon using highly light-confining structures to enhance the sensitivity of light to small changes in refractive index and confirm the recent theoretical prediction of efficient optical switching in silicon using resonant structures.
Posted Content

Hybrid graphene-quantum dot phototransistors with ultrahigh gain

TL;DR: In this article, the authors exploit the strong light absorption in quantum dots and the two-dimensionality and high mobility of graphene to merge these materials into a hybrid system for photodetection with extremely high sensitivity.
Related Papers (5)