Journal ArticleDOI
High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor
TLDR
In this article, stable organic field effect transistors (OFETs) with an ultra-thin HfO2 gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD) are presented.Abstract:
We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO2 gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm2/V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO2 layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor.read more
Citations
More filters
Journal ArticleDOI
Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors
Guixia Jiang,Ao Liu,Guoxia Liu,Chundan Zhu,You Meng,Byoung-Chul Shin,Elvira Fortunato,Rodrigo Martins,Fukai Shan +8 more
TL;DR: In this article, a spincoating-based MgO dielectric transistor was fabricated using the spin-coating method and an optimized In2O3/MgO TFT exhibited an electron mobility of 5.48 cm2/V s.
Journal ArticleDOI
Solution-processed hafnium oxide dielectric thin films for thin-film transistors applications
TL;DR: Hafnium oxide (HfO x ) dielectric thin films were fabricated on heavily-doped silicon (100) substrates by a solution process The precursor solution was prepared by dissolving HfCl 4 in ethanol.
Journal ArticleDOI
Low operating voltage organic transistors and circuits with anodic titanium oxide and phosphonic acid self-assembled monolayer dielectrics
Hiroaki Jinno,Tomoyuki Yokota,Naoji Matsuhisa,Martin Kaltenbrunner,Yutaro Tachibana,Takao Someya +5 more
TL;DR: In this article, the authors fabricated organic thin-film transistors with sub-1 V driving voltage enabled by a hybrid dielectric comprising high-k amorphous titanium oxide (TiO x ) and a phosphonic acid self-assembled monolayer (SAM).
Journal ArticleDOI
Low-Temperature Fabrication of Robust, Transparent, and Flexible Thin-Film Transistors with a Nanolaminated Insulator.
Jeong Hyun Kwon,Jun-Hong Park,Myung Keun Lee,Jeong Woo Park,Yongmin Jeon,Jeong Bin Shin,Minwoo Nam,Choong-Ki Kim,Yang-Kyu Choi,Kyung Cheol Choi +9 more
TL;DR: A IGZO-based TFT with IAI electrodes and the 70 °C AM-laminated insulator was fabricated to evaluate robustness, transparency, flexibility, and process temperature, resulting in transfer characteristics comparable to those of an IGZo-basedTFT with a 150 °C Al2O3 insulator.
Journal ArticleDOI
Difluorobenzothiadiazole and Selenophene-Based Conjugated Polymer Demonstrating an Effective Hole Mobility Exceeding 5 cm2 V-1 s-1 with Solid-State Electrolyte Dielectric.
Benjamin Nketia-Yawson,A-Ra Jung,Hieu Dinh Nguyen,Kyung-Koo Lee,Bongsoo Kim,Bongsoo Kim,Yong-Young Noh +6 more
TL;DR: The excellent carrier mobility from the PDFDSe/SEGI device demonstrates a great potential of semiconducting polymer thin-film transistors as electronic components in future electronic applications.
References
More filters
Journal ArticleDOI
General observation of n-type field-effect behaviour in organic semiconductors
Lay-Lay Chua,Lay-Lay Chua,Jana Zaumseil,Jui Fen Chang,Eric C.W. Ou,Peter K. H. Ho,Peter K. H. Ho,Henning Sirringhaus,Richard H. Friend +8 more
TL;DR: It is demonstrated that the use of an appropriate hydroxyl-free gate dielectric—such as a divinyltetramethylsiloxane-bis(benzocyclobutene) derivative (BCB; ref. 6)—can yield n-channel FET conduction in most conjugated polymers, revealing that electrons are considerably more mobile in these materials than previously thought.
Journal ArticleDOI
Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals
Vikram C. Sundar,Jana Zaumseil,Vitaly Podzorov,Etienne Menard,R. L. Willett,Takao Someya,Michael Gershenson,John A. Rogers +7 more
TL;DR: This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as ∼15 cm2/V·s and subthreshold slopes as low as 2nF·V/decade·cm2.
Journal ArticleDOI
Inkjet printing of single-crystal films
Hiromi Minemawari,Toshikazu Yamada,Hiroyuki Matsui,Jun'ya Tsutsumi,Simon Haas,Ryosuke Chiba,Ryosuke Chiba,Reiji Kumai,Reiji Kumai,Tatsuo Hasegawa +9 more
TL;DR: It is shown that mixing fine droplets of an antisolvent and a solution of an active semiconducting component within a confined area on an amorphous substrate can trigger the controlled formation of exceptionally uniform single-crystal or polycrystalline thin films that grow at the liquid–air interfaces.
Journal ArticleDOI
Ultralow-power organic complementary circuits
TL;DR: This work demonstrates an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc) to implement transistors, circuits, displays and sensors on arbitrary substrates.
Journal ArticleDOI
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
TL;DR: Puurunen et al. as discussed by the authors summarized the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD.