Journal ArticleDOI
High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction
Jingjing Yu,Jingjing Yu,Kashif Javaid,Kashif Javaid,Lingyan Liang,Weihua Wu,Weihua Wu,Yu Liang,Anran Song,Hongliang Zhang,Wen Shi,Ting-Chang Chang,Hongtao Cao +12 more
TLDR
The proposed phototransistor could be potentially used in high-performance visible-blind UV photodetector pixel arrays, and by applying a short positive gate pulse onto the gate, the annoying persistent photoconductivity presented in the wide band gap oxide-based devices could be suppressed conveniently, in hope of improving the response rate.Abstract:
A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p–n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surface of amorphous indium–gallium–zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnOx/IGZO heterojunction structure, through which the formation of a p–n junction and directional carrier transfer of photogenerated carriers were experimentally validated. As expected, the photoresponse characteristics of the newly designed photodetector, with a photoresponsivity of 984 A/W at a wavelength of 320 nm, a UV–visible rejection ratio up to 3.5 × 107, and a specific detectivity up to 3.3 × 1014 Jones, are not only competitive compared to the previous reports but also better than those of the pristine IGZO phototransistor. The hybrid photodetector could be operated in the off-current region with low supply voltages (<0.1 V)...read more
Citations
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Journal ArticleDOI
Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation
Jinran Yu,Lingyan Liang,L. Hu,Hongxiao Duan,Weitong Wu,Hanlu Zhang,Juan Gao,Fei Zhuge,Ting-Chang Chang,Hongtao Cao +9 more
TL;DR: In this paper, the authors demonstrate a novel optoelectronic neuromorphic device based on pn-junction-decorated oxide thin-film transistor that can response to broadband vision data ranging from ultraviolet to visible light region in a neuromorphic system.
Journal ArticleDOI
Memristive Artificial Synapses for Neuromorphic Computing
Wen Huang,Xuwen Xia,Chen Zhu,Parker Steichen,Weidong Quan,Weiwei Mao,Jianping Yang,Liang Chu,Xing’ao Li +8 more
TL;DR: In this paper, a review of synapse devices based on electrical and optical signals is presented, which can be classified into three categories: electrically stimulated, optically stimulated and photoelectric synergetic devices.
Journal ArticleDOI
Organic UV-Sensitive Phototransistors Based on Distriphenylamineethynylpyrene Derivatives with Ultra-High Detectivity Approaching 1018.
Jingwei Tao,Dan Liu,Zhengsheng Qin,Bo Shao,Jiangbo Jing,Hongxiang Li,Huanli Dong,Bin Xu,Wenjing Tian +8 more
TL;DR: The great potential of 1,6-DTEP and 2,7- DTEP-based phototransistors for organic UV-photodetector applications are indicated and a new design strategy is provided to develop series of better performance UV photoelectric organic materials for related research in organic optoelectronics.
Journal ArticleDOI
Multi-spectral gate-triggered heterogeneous photonic neuro-transistors for power-efficient brain-inspired neuromorphic computing
Sung Woon Cho,Sung Min Kwon,Minkyung Lee,Jeong-Wan Jo,Jae Sang Heo,Yong-Hoon Kim,Hyung Koun Cho,Sung Kyu Park +7 more
TL;DR: In this article, a multi-spectral activated heterogeneous photonic neuro-transistor was developed for an intelligent and energy efficient neuromorphic device, including a solution-processed broadband photo-active heterogeneous channel and electronic modulatory terminal enabling to establish power-saved multi-level writing/reading processing.
Journal ArticleDOI
Spike Encoding with Optic Sensory Neurons Enable a Pulse Coupled Neural Network for Ultraviolet Image Segmentation.
Quantan Wu,Bingjie Dang,Bingjie Dang,Congyan Lu,Guangwei Xu,Guanhua Yang,Jiawei Wang,Xichen Chuai,Nianduan Lu,Geng Di,Hong Wang,Ling Li +11 more
TL;DR: An artificial sensory neuron consisting of an InGaZnO4 (IGZO4)-based optical sensor and NbOx-based oscillation neuron in series is demonstrated, which can simultaneously sense the optical information even beyond the visible light region and encode them into electrical impulses.
References
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High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infrared.
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Journal ArticleDOI
Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
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Journal ArticleDOI
Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions.
Ya-Qing Bie,Zhi-Min Liao,Hongzhou Zhang,Guangru Li,Yu Ye,Yang-Bo Zhou,Jun Xu,Zhi-Xin Qin,Lun Dai,Dapeng Yu +9 more
TL;DR: Ultrafast-response (20 μs) UV detectors, which are visible-blind and self-powered, in devices where an n-type ZnO nanowire partially lies on a p-type GaN film, are demonstrated.
Journal ArticleDOI
Fast and Sensitive Solution-Processed Visible-Blind Perovskite UV Photodetectors.
Valerio Adinolfi,Olivier Ouellette,Makhsud I. Saidaminov,Grant Walters,Ahmed L. Abdelhady,Osman M. Bakr,Edward H. Sargent +6 more
TL;DR: The first visible-blind UV photodetector based on MAPbCl3 integrated on a substrate exhibits excellent performance, with responsivities reaching 18 A W(-1) below 400 nm and imaging-compatible response times of 1 ms.
Journal ArticleDOI
Ultraporous Electron‐Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible‐Blind UV Photodetectors
TL;DR: A hierarchical nano- and microstructured morphology for visible-blind UV photo-detectors is developed, which provides record-high milliampere photocurrents, nanoampere dark currents, and excellent selectivity to ultralow UV light intensities.