Journal ArticleDOI
High-speed and high-power germanium photodetector with a lateral silicon nitride waveguide
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TLDR
In this article, the authors proposed a double lateral Si3N4 waveguide for germanium-on-silicon photodetectors (Geon-Si PDs), which can serve as a novel waveguide-integrated coupling configuration.Abstract:
Up to now, the light coupling schemes of germanium-on-silicon photodetectors (Ge-on-Si PDs) could be divided into three main categories: (1) vertical (or normal-incidence) illumination, which can be from the top or back of the wafer/chip, and waveguide-integrated coupling including (2) butt coupling and (3) evanescent coupling. In evanescent coupling the input waveguide can be positioned on top, at the bottom, or lateral to the absorber. Here, to the best of our knowledge, we propose the first concept of Ge-on-Si PD with double lateral silicon nitride (Si3N4) waveguides, which can serve as a novel waveguide-integrated coupling configuration: double lateral coupling. The Ge-on-Si PD with double lateral Si3N4 waveguides features uniform optical field distribution in the Ge region, which is very beneficial to improving the operation speed for high input power. The proposed Ge-on-Si PD is comprehensively characterized by static and dynamic measurements. The typical internal responsivity is evaluated to be 0.52 A/W at an input power of 25 mW. The equivalent circuit model and theoretical 3 dB opto-electrical (OE) bandwidth investigation of Ge-on-Si PD with lateral coupling are implemented. Based on the small-signal (S21) radio-frequency measurements, under 4 mA photocurrent, a 60 GHz bandwidth operating at −3 V bias voltage is demonstrated. When the photocurrent is up to 12 mA, the 3 dB OE bandwidth still has 36 GHz. With 1 mA photocurrent, the 70, 80, 90, and 100 Gbit/s non-return-to-zero (NRZ) and 100, 120, 140, and 150 Gbit/s four-level pulse amplitude modulation clear openings of eye diagrams are experimentally obtained without utilizing any offline digital signal processing at the receiver side. In order to verify the high-power handling performance in high-speed data transmission, we investigate the eye diagram variations with the increase of photocurrents. The clear open electrical eye diagrams of 60 Gbit/s NRZ under 20 mA photocurrent are also obtained. Overall, the proposed lateral Si3N4 waveguide structure is flexibly extendable to a light coupling configuration of PDs, which makes it very attractive for developing high-performance silicon photonic integrated circuits in the future.read more
Citations
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Journal ArticleDOI
Heterogeneous integration of Si photodiodes on silicon nitride for near-visible light detection.
Stijn Cuyvers,Artur Hermans,Max Kiewiet,Jeroen Goyvaerts,Gunther Roelkens,Kasper Van Gasse,Dries Van Thourhout,Bart Kuyken +7 more
TL;DR: In this article , the first micro-transfer printed Si p-i-n photodiodes on a commercially available SiN platform to target wavelengths <850 nm were presented.
Journal ArticleDOI
High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure.
TL;DR: In this paper , a high-performance waveguide Ge/Si avalanche photodiode operating at the O-band (1310 nm) is designed with a Ge-Si ridge waveguide defined by two shallow trenches in the active region.
Journal ArticleDOI
High-speed and high-power germanium photodetector based on a trapezoidal absorber.
Yupeng Zhu,Zhi Liu,Chaoqun Niu,Yaqing Pang,DianDian Zhang,Xiangquan Liu,Jun Zheng,Yuhua Zuo,Haiyun Xue,Bowen Cheng +9 more
TL;DR: In this paper , a compact high-power germanium photodetector (Ge PD) is experimentally demonstrated by re-engineering light distribution in the absorber, which shows a DC saturation photocurrent improved by 28.9% and 3 dB bandwidth as high as 49.5 GHz at 0.1 mA.
Journal ArticleDOI
67GHz light-trapping-structure germanium photodetector supports 240 Gbit/s PAM-4 Transmission
Daigao Chen,Hongguang Zhang,Min Liu,Yuguang Zhang,Dingyi Wu,Peiqi Zhou,Siyao Chang,Lei Wang,Xi Xiao,Xiao Hu +9 more
TL;DR: In this article , a light-trapping-structure vertical Ge photodetector (PD) is demonstrated, and a 3 μm radius Ge mesa is fabricated to constrain the optical signal in the circular absorption area.
Journal ArticleDOI
Effect of different exfoliation solvents on the saturable absorption properties of germanene and silicene nanosheets prepared by the liquid-phase exfoliation
TL;DR: In this article , a dual-arm detection technique was used to systematically study the nonlinear absorption properties of 2D materials and provide a reference and basis for further optimization and improvement of the properties parameters of saturable absorbers.
References
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