Journal ArticleDOI
Intrinsic Structural Defects in Monolayer Molybdenum Disulfide
Wu Zhou,Xiaolong Zou,Sina Najmaei,Zheng Liu,Yumeng Shi,Jing Kong,Jun Lou,Pulickel M. Ajayan,Boris I. Yakobson,Juan Carlos Idrobo +9 more
TLDR
The atomic scale study of structural defects presented here brings new opportunities to tailor the properties of MoS2 via controlled synthesis and defect engineering.Abstract:
Monolayer molybdenum disulfide (MoS2) is a two-dimensional direct band gap semiconductor with unique mechanical, electronic, optical, and chemical properties that can be utilized for novel nanoelectronics and optoelectronics devices. The performance of these devices strongly depends on the quality and defect morphology of the MoS2 layers. Here we provide a systematic study of intrinsic structural defects in chemical vapor phase grown monolayer MoS2, including point defects, dislocations, grain boundaries, and edges, via direct atomic resolution imaging, and explore their energy landscape and electronic properties using first-principles calculations. A rich variety of point defects and dislocation cores, distinct from those present in graphene, were observed in MoS2. We discover that one-dimensional metallic wires can be created via two different types of 60° grain boundaries consisting of distinct 4-fold ring chains. A new type of edge reconstruction, representing a transition state during growth, was als...read more
Citations
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Journal ArticleDOI
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
Chaoliang Tan,Xiehong Cao,Xiehong Cao,Xue-Jun Wu,Qiyuan He,Jian Yang,Xiao Zhang,Junze Chen,Wei Zhao,Shikui Han,Gwang-Hyeon Nam,Melinda Sindoro,Hua Zhang +12 more
TL;DR: The unique advances on ultrathin 2D nanomaterials are introduced, followed by the description of their composition and crystal structures, and the assortments of their synthetic methods are summarized.
Journal ArticleDOI
Recent Advances in Two-Dimensional Materials beyond Graphene
Ganesh R. Bhimanapati,Zhong Lin,Vincent Meunier,Vincent Meunier,Yeonwoong Jung,Jangho J Cha,Saptarshi Das,Di Xiao,Young-Woo Son,Michael S. Strano,Valentino R. Cooper,Liangbo Liang,Liangbo Liang,Steven G. Louie,Steven G. Louie,Emilie Ringe,Wenchao Zhou,Steve S. Kim,Rajesh R. Naik,Bobby G. Sumpter,Humberto Terrones,Humberto Terrones,Fengnian Xia,Yeliang Wang,Jian Zhu,Deji Akinwande,Nasim Alem,Jon A. Schuller,Raymond E. Schaak,Mauricio Terrones,Joshua A. Robinson +30 more
TL;DR: Insight is provided into the theoretical modeling and understanding of the van der Waals forces that hold together the 2D layers in bulk solids, as well as their excitonic properties and growth morphologies.
Journal ArticleDOI
Vertical and in-plane heterostructures from WS2/MoS2 monolayers.
Yongji Gong,Junhao Lin,Xingli Wang,Gang Shi,Sidong Lei,Zhong Lin,Xiaolong Zou,Gonglan Ye,Robert Vajtai,Boris I. Yakobson,Humberto Terrones,Mauricio Terrones,Beng Kang Tay,Jun Lou,Sokrates T. Pantelides,Zheng Liu,Wu Zhou,Pulickel M. Ajayan +17 more
TL;DR: A one-step growth strategy for the creation of high-quality vertically stacked as well as in-plane interconnected heterostructures of WS2/MoS2 via control of the growth temperature is reported.
Journal ArticleDOI
Valleytronics in 2D materials
John Schaibley,Hongyi Yu,Genevieve Clark,Pasqual Rivera,Jason Ross,Kyle L. Seyler,Wang Yao,Xiaodong Xu +7 more
TL;DR: In this article, the latest advances in valley-tronics have largely been enabled by the isolation of 2D materials (such as graphene and semiconducting transition metal dichalcogenides) that host an easily accessible electronic valley degree of freedom, allowing for dynamic control.
Journal ArticleDOI
Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2.
TL;DR: In situ scanning transmission electron microscopy can be used to follow the structural transformation between semiconducting (2H) and metallic (1T) phases in single-layered MoS2, with atomic resolution.
References
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Journal ArticleDOI
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.
TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
Journal ArticleDOI
Atomically thin MoS2: a new direct-gap semiconductor
TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
Journal ArticleDOI
Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Journal ArticleDOI
Control of valley polarization in monolayer MoS2 by optical helicity
TL;DR: It is demonstrated that optical pumping with circularly polarized light can achieve complete dynamic valley polarization in monolayer MoS(2) (refs 11, 12), a two-dimensional non-centrosymmetric crystal with direct energy gaps at two valleys.
Journal ArticleDOI
Biomimetic Hydrogen Evolution: MoS2 Nanoparticles as Catalyst for Hydrogen Evolution
Berit Hinnemann,Poul Georg Moses,Jacob Lindner Bonde,Kristina Pilt Jørgensen,Jane Hvolbæk Nielsen,Sebastian Horch,Ib Chorkendorff,Jens K. Nørskov +7 more
TL;DR: The ability of different metal surfaces and of the enzymes nitrogenase and hydrogenase to catalyze the hydrogen evolution reaction is analyzed and a necessary criterion for high catalytic activity is found: that the binding free energy of atomic hydrogen to the catalyst is close to zero.