Isothermal stress relaxation in electroplated Cu films. I. Mass transport measurements

TLDR: In this article, the authors measured the interface and grain-boundary mass transport measured from isothermal stress relaxation in electroplated Cu thin films with and without a passivation layer and developed a kinetic model developed to analyze the stress relaxation based on the coupling of grain boundary and interface diffusion.

Abstract: Recent studies on Cu interconnects have shown that interface diffusion between Cu and the cap layer dominates mass transport for electromigration. The kinetics of mass transport by interface diffusion strongly depends on the material and processing of the cap layer. In this series of two papers, we report in Part I the interface and grain-boundary mass transport measured from isothermal stress relaxation in electroplated Cu thin films with and without a passivation layer and in Part II a kinetic model developed to analyze the stress relaxation based on the coupling of grain boundary and interface diffusion. We show that a set of isothermal stress relaxation experiments together with appropriate modeling analysis can be used to evaluate the kinetics of interface and grain-boundary diffusion that correlate to electromigration reliability of Cu interconnects. Thermal stresses in electroplated Cu films with and without passivation, subjected to thermal cycling and isothermal annealing at selected temperatures...